• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.63-68
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• 2019

온도 및 압축응력 변화에 따른 PIN-PMN-PT계 압전 단결정의 유전 특성과 압전 특성을 조사하였다. 단결정의 결정상은 110℃ 영역에서 강유전 rhombohedral 구조에서 tetragonal 구조로, 190℃ 영역에서 tetragonal 구조로부터 상유전 cubic 구조로 변화하였다. 전계 인가에 따른 분극 및 변위의 변화율로부터 압전상수와 비유전율을 계산하였으며, 이는 계측기로부터 측정된 값과 유사한 수준을 나타내었다. 샘플에 인가되는 압축응력이 증가할수록 압전상수 d₃₃과 비유전율값은 증가하는 경향성을 나타내었다. 측정 온도 5℃에서 샘플에 인가되는 압축응력이 60 MPa인 경우 d₃₃ 값이 4500 pC/N로 계산되었으며, 측정 온도 60℃인 경우, 샘플에 인가되는 압축응력이 40 MPa 일 때 비유전율 62000이 계산되었다. 압축응력이 높아질 때 압전상수와 비유전율 값이 상승한 것은 rhombohedral 상에서 orthorhombic 상으로의 전이에 기인한 것으로 판단된다.

• 열처리공학회지
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• 제23권5호
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• pp.233-238
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• 2010

The phase transformations and the shape memory effect in In-rich Pb alloys and In rich-Sn alloys have been studied by means of X-ray diffractometry supplemented by metallographic observations. The alloys containing 12~15 at.%Pb transform from the ${\alpha}_2$ (fct) phase to the ${\alpha}_1$ (fct) phase by way of an intermediate phase (m phase) on cooling. The results of X-ray diffraction show that the metastable intermediate phase is observed both on cooling and heating, and has a face-centered orthorhombic (fco) structure. It is concluded that the ${\alpha}_1{\rightleftarrows}{\alpha}_2$ transformation is expressed by the ${\alpha}_1{\rightleftarrows}m{\rightleftarrows}{\alpha}_2$ transformation both on usual cooling and heating with the rate more than $8{\times}10^{-3}$ K/s. The $m{\rightleftarrows}{\alpha}_2$ transformation takes place with a mechanism involving macroscopic shear and are of diffusionless (martensitic) type. The temperature hysteresis in the two transformations is 10~13 K between the heating and cooling transformations. The alloys containing 0~11 at.%Sn are -phase solid solutions with a face centered tetragonal structure (c/a > 1) at room temperature, the axial ratio increasing continuously with tin content. The In-(11~15) at.%Sn alloys are mixtures of ${\alpha}$ and ${\beta}$ phases, the ${\beta}$ phase having a f. c. tetragonal structure (c/a < 1). The alloys containing more than 15 at.%Sn are ${\beta}$-phase solid solutions. The In-(12.9~15.0) at.%Sn alloys show a shape memory effect only when quenched to the temperature of liquid nitrogen, although their effect becomes weak and finally disappears after keeping at room temperature for a long time. The ${\beta}{\rightarrow}{\alpha}^{\prime}$ phase transformation is of the diffusionless (martensitic) type, and takes place between 330 K at 12.9 at.%Sn and 150 K at 14.5 at.%Sn. The hysteresis of transformation temperatures on heating and cooling is considerably large (29~40 K), depending on the composition. Both In-Pb and In-Sn alloys showed distinct the shape memory effects.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.624-627
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• 2001

Two kinds of Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$, the sintering samples and zone melting samples, were heat treated under pure Ar at 95$0^{\circ}C$. The substitution of Nd ion for Ba ion in the Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$ before and after the heat treatment were investigated by XRD. In order to know the effects of the heat treatment, the T$_{c}$ and J$_{c}$ of samples with the heat treatment and those without the heat treatment by Ar were comparatively studied. The results show that the substitution of Nd for Ba decreased, T$_{c}$, and J$_{c}$ increased after the treatment under Ar at 95$0^{\circ}C$. The Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$ samples were oxygenated under pure oxygen at 30$0^{\circ}C$. From the XRD pattern it was found that the sample with x< 0.4 could transfer from tetragonal phase to orthorhombic phase after the oxygenation, but the sample with x>0.4 could not make the phase transition even after a long time oxygenation.ion even after a long time oxygenation.ation.n.ation.ation.

• 한국결정학회지
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• 제1권2호
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• pp.66-75
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• 1990

Pd-Te계의 상평형도를 시차열분석, X선회절분석, 전자현미분석, 반사현미경을 사용해 연구하였다. 본 계의 0-50 at.%Te 부분의 새로운 상관계가 정립되었다. 본 계에는 Pd17Te4, Pd20Te7, Pd8Te3, Pd7Te3, PdgTe4, Pd3Te2, PdTe, PdTe2 등 8개의 화합물이 존재하며 이중 Pd17Te4와 Pd7Te3는 처음 보고되는 신종 화합물이다. Pd17Te4는 등축정계이며 공간군 Fd3r에 속하며 단위포 크기 (a)는 12. 678(5)차이다. PdaTe.4와Pd7Te3의 X선회절분말자료는 사방정계의 단위포 a=12.843(3), b=15.126(3), c=11.304(2)A와 단사 정계의 단위포 a=7.444(1), b=13.918(2), c=8.873 (2)il, β=92.46(2)에 의해 각각 격자지수화가 가능하였다. 본계에 존재하는 합성 화합물의 일부 물리적, 광학적 자료를 새로 보고하였다.

• Journal of Magnetics
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• 제18권1호
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• pp.34-38
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• 2013

This paper studies the effects of the Mn-site substitution by nickel on the magnetic properties and the magnetocaloric properties of $La_{0.7}Ca_{0.3}Mn_{1-x}Ni_xO_3$ (x = 0, 0.05 and 0.1). The orthorhombic crystal structures of the samples are confirmed by the room temperature X-ray diffraction. The dependence of the Curie temperature ($T_C$) and the magnetic entropy change (${\Delta}S_M$) on the Ni doping content was investigated. The samples with x = 0 had the first order phase transition, while the samples with x = 0.05 and 0.1 had the second order phase transition. As the concentration of Ni increased, the maximum entropy change (${\mid}{\Delta}S_M{\mid}_{max}$) decreased gradually, from 2.78 $J{\cdot}kg^{-1}{\cdot}K^{-1}$ (x = 0) to 1.02 $J{\cdot}kg^{-1}{\cdot}K^{-1}$ (x = 0.1), in a magnetic field change of 15 kOe. The measured value of $T_C$ was 185 K, 150 K and 145 K for x = 0, 0.05 and 0.1, respectively. The phase transition temperatures became wider as x increased. It indicates that the Mn-site substitution by Ni may be used to tailor the Curie temperature in $La_{0.7}Ca_{0.3}Mn_{1-x}Ni_xO_3$.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.513-519
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• 2023

It was reported that a tetragonal phase can be stabilized with maintaining good piezoelectric properties when Na_0.5K_0.5NbO₃ (KNN) is modified with 0.06 mol SrTiO₃. However, such a high amount of SrTiO₃ leads not only to poor sinterability but low Curie temperature (T_C). To maintain high TC with good piezoelectric properties in KNN-based lead-free piezoelectric ceramics, this study investigates the effect of Li-doping on the dielectric and piezoelectric properties of 0.96Na_0.5K_0.5NbO₃-0.04SrTiO₃ (KNN-4ST) ceramics. As a result, the orthorhombic-tetragonal phase transition was observed at 2 mol% Li₂CO₃ modified KNN-4ST ceramics, whose T_C, d₃₃ and k_p values are 328℃, 165pC/N and 0.33, respectively.

• 한국세라믹학회지
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• 제40권2호
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• pp.206-211
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• 2003

Sol-gel 공정으로 제조된 YMnO$_3$박막의 결정상과 강유전특성에 미치는 기판종류와 버퍼층의 영향에 대하여 고찰하였다. Si(1OO) 기판위에는 hexagonal YMnO$_3$이 형성되었으나 Pt(111)/TiO$_2$/SiO$_2$/Si 기판위에는 hexagonal과 orthorhombic YMnO$_3$이 함께 형성되었다. 기판위에 미리 $Y_2$O$_3$버퍼층을 형성시킨 경우에는 Si(100)와 Pt(111)/TiO$_2$/SiO$_2$/Si 두가지 기판 모두 단일 hexagonal YMnO$_3$이 성장하였으며, 특히 c-축 배향성이 향상되었다. 박막내에 hexagonal과 orthorhombic YMnO$_3$이 혼재된 시편보다는 hexagonal 단일상이 형성된 시편이, 또한 단일상 시편중에서도 c-축 우선배향성이 좋은 시편이 그렇지 않은 시편에 비해 누설전류밀도 특성이 우수하였다. YMnO$_3$박막의 잔류분극값은 Si(100)기판을 사용했을 경우, 버퍼층 없이 제조된 시편은 0.14, 버퍼층이 삽입된 시편은 0.24$\mu$C/$ extrm{cm}^2$의 값을 나타내었다 한편 Pt(111)/TiO$_2$/SiO$_2$/Si 기판의 경우, 버퍼층 없이 형성된 YMnO$_3$시편은 이력곡선을 보여주지 못하였고, 버퍼층이 삽입된 시편은 1.14$\mu$C/$\textrm{cm}^2$의 잔류분극값을 나타내었다. 이상의 연구를 통하여 기판의 종류와 $Y_2$O$_3$버퍼층 삽입으로 YMnO$_3$박막의 결정상과 배향성을 제어함으로서 박막시편의 누설전류밀도 특성 및 강유전특성을 제어할 수 있음을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제34권9호
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• pp.2737-2740
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• 2013

The layered $KTiNbO_5$ was successfully synthesized with titanium(IV) isopropoxide and niobium oxalate by a novel polymerized complex (PC) method. The morphology and structure of the as-prepared sample was characterized by means of High-Resolution Transmission Electron Microscope, powder X-ray diffraction, and Laser Raman Spectroscopy. The spectral response characteristic was recorded by using UV-vis Diffuse Reflectance Spectroscopy. Results show that $KTiNbO_5$ as-prepared by PC method presents an uniform morphology of nano-particles, the mean particle sizes is ca. 28 nm corresponding to the (002), and the crystal structure can be well indexed to the orthorhombic phase. The sample as-prepared by PC method has higher band gap energy than that of the sample prepared by a solid-state reaction method due to the quantum size effect.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권4호
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• pp.159-163
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• 2003

ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.6-10
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• 2000

Ferroelectric YMnO$_3$ thin films were deposited on $Y_2$O$_3$/si(100) substrates by metalorganic chemical vapor deposition. The YMnO$_3$ thin films annealed in vacuum ambient (100 mTorr) above 75$0^{\circ}C$ show hexagonal structured YMnO$_3$. However, the film annealed in oxygen ambient shows poor crystallinity, and the second phase as $Y_2$O$_3$ and orthorhombic-YMnO$_3$ were shown. The annealing ambient and pressure on the crystallinity of YMnO$_3$ thin films is very important. The C-V characteristics have a hysteresis curve with a clockwise rotation, which indicates ferroelectric polarization switching behavior. When the gate voltage sweeps from +5 to 5 V, the memory window of the Pt/YMnO$_3$/Y$_2$O$_3$/Si gate capacitor annealed at 85$0^{\circ}C$ is 1.8 V. The typical leakage current densities of the films annealed in oxygen and vacuum ambient are about 10$^{-3}$ and 10$^{-7}$ A/cm$^2$ at applied voltage of 5 V.