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http://dx.doi.org/10.6117/kmeps.2019.26.4.063

Effect of Temperature and Compressive Stress on the Dielectric and Piezoelectric Properties of PIN-PMN-PT Single Crystal  

Lim, Jae Gwang (Department of Electronic Engineering, Korea National University of Transportation)
Park, Jae Hwan (Department of Electronic Engineering, Korea National University of Transportation)
Lee, Jeongho (Ibule Photonics)
Lee, Sang Goo (Ibule Photonics)
Publication Information
Journal of the Microelectronics and Packaging Society / v.26, no.4, 2019 , pp. 63-68 More about this Journal
Abstract
Dielectric and piezoelectric properties of PIN-PMN-PT piezoelectric single crystals with variation of temperature and compressive stress were investigated. The crystal phase of the single crystal was changed from the ferroelectric rhombohedral structure to tetragonal structure in the 110℃ region and from the tetragonal structure to the paraelectric cubic structure in the 190℃ region. The piezoelectric constant and relative dielectric constant were calculated from the rate of change of polarization and displacement with the application of electric field, which was similar to the value measured from the instrument. As the compressive stress applied to the sample increased, the piezoelectric constant d33 and relative dielectric constant values tended to increase. When the compressive stress applied to the sample at 5℃ was 60 MPa, the d33 was calculated as 4,500 pC/N. At 60℃, the relative dielectric constant of 62000 was calculated when the compressive stress applied to the sample was 40 MPa. The increase in piezoelectric constant and relative dielectric constant when the compressive stress increased could be attributed to the phase transition from the rhombohedral structure to orthorhombic.
Keywords
$Pb(In_{1/2}Nb_{1/2})O_3$; PMN-PT; single crystal; piezoelectric coefficient; strain;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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