• Strategy21
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• s.46
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• pp.205-238
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• 2020

The origin of mission command can be traced to the era of the Prussian military reforms led by General Gerhard von Scharnhorst after defeats in battle of Jena and Auerstadt in 1806 against Napoleon I. Mission Command is the conduct of military operations through decentralized execution based upon mission-type orders. Commanders issue mission-type orders focused on the purpose of the operation rather than details of how to perform assigned tasks. The mission command has become the command philosophy of the German military and recently many countries in the west accept it as a command philosophy. This study compare and analyze the Battle of St. Vincent and the Battle of Jutland to make sure if the army-initiated mission commands were also useful for the navy. From the late 18th century, represented by the era of Nelson, Royal navy changed from the inherited rigid command culture to guaranteeing the disciplined initiative of its subordinate commanders. In the Battle of St. Vincent in 1797, Nelson acted contrary to the commander's orders at the crucial moment, which gave Britain a decisive victory. On the contrary more than 100 years later, the command culture of the Royal navy changed into a centralized command culture. In the Battle of Jutland in 1916, Royal Navy couldn't win because the rigid command culture did not guarantee initiative of subordinate commanders and subordinate commander's passive attitude of waiting for the commander's instructions even at critical moments. Therefore, a mission command that guarantees the initiative of subordinate commanders is a useful concept even in the navy because it makes subordinate commanders to take full advantage of a sudden change in battle. Today's advanced information and communication technologies have raised questions about mission command. But even advanced technology can't completely eliminate the fundamental nature of the war-the fog of war. War is chaotic and unpredictable. In the flood of lots of informations, senior commander's judgement is not always right because he(she) is also human, he(she) can make mistakes. In the age of informatization, mission command is still effective because it involves increasing interaction and synergy between senior and subordinate commanders by ensuring their independence. Therefore ROK navy also needs to activate mission command. ROK navy must dismantle the zero-defect mentality and apply from educations as Prussian did to establish a mission command culture.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.195-199
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• 2003

The $p-CdIn_2$$Te_4$single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_2$$Te_4$crystal and the various heat-treated crystals, the ($D^{\circ}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Cd, while the ($A^{\circ}$, X) emission completely disappeared in the $CdIn_2$T $e_4$:Cd. However, the ($A^{\circ}$, X) emission in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Te was the dominant intensity like an as-grown $CdIn_2$T $e_4$crystal. These results indicated that the ($D^{\circ}$, X) is associated with $V_{Te}$ acted as donor and that the ($A^{\circ}$, X) emission is related to $V_{cd}$ acted as acceptor, respectively. The $p-CdIn_2$T $e_4$crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of ( $D^{\circ}$, $A^{\circ}$) emission and its TO phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{cd}$ or T $e_{int}$. Also, the In in the $CdIn_2$X$CdIn_4$was confirmed not to form the native defects because it existed in the stable form of bonds.

• Tunnel and Underground Space
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• v.10 no.1
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• pp.70-79
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• 2000

We carried out NPT-ensemble (constant-number of particles, pressure, and temperature) Molecular Dynamics (MD) simulations for measuring strength anisotropy under uniaxial compressive stress rotated to the crystallographic axes in $\alpha$-quartz. Uniaxial compressive strengths of a single quartz crystal were measured in directions of the a- and c-axis. Measured uniaxial strength of a single quartz crystal was higher in the direction parallel to the c-axis than that measured in the direction normal to the c-axis. However the reverse was found in calculated uniaxial strengths by MD simulation. The contradictive result of strengths was observed in both cases but was found to be different in origin. Strength anisotropy of defectless $\alpha$-quartz crystal in MD simulation is basically caused by structural difference of quartz. By contrast, anisotropy of measured strength in the uniaxial compression test is related to oriented micro-defects developed during crystal growth.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.755-763
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• 2004

A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.

• Archives of Plastic Surgery
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• v.44 no.2
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• pp.136-143
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• 2017

Background The goal of this study was to investigate the anatomy of the peroneal artery and its perforators, and to report the clinical results of reconstruction with peroneal artery perforator flaps. Methods The authors dissected 4 cadaver legs and investigated the distribution, course, origin, number, type, and length of the perforators. Peroneal artery perforator flap surgery was performed on 29 patients. Results We identified 19 perforators in 4 legs. The mean number of perforators was 4.8 per leg, and the mean length was 4.8 cm. Five perforators were found proximally, 9 medially, and 5 distally. We found 12 true septocutaneous perforators and 7 musculocutaneous perforators. Four emerged from the posterior tibia artery, and 15 were from the peroneal artery. The peroneal artery perforator flap was used in 29 patients. Retrograde island peroneal flaps were used in 8 cases, anterograde island peroneal flaps in 5 cases, and free peroneal flaps in 16 cases. The mean age was 59.9 years, and the defect size ranged from $2.0cm{\times}4.5cm$ to $8.0cm{\times}8.0cm$. All the flaps survived. Five flaps developed partial skin necrosis. In 2 cases, a split-thickness skin graft was performed, and the other 3 cases were treated without any additional procedures. Conclusions The peroneal artery perforator flap is a good alternative for the reconstruction of soft tissue defects, with a constant and reliable vascular pedicle, thin and pliable skin, and the possibility of creating a composite tissue flap.

• Journal of Veterinary Clinics
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• v.29 no.3
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• pp.250-254
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• 2012

An eight-year-old, castrated male, a Schnauzer dog was presented with dysuria, hematuria and intermittent vomiting. Retrograde positive contrast urethrography was performed under fluoroscope. On the contrast examination, the leakage was observed in the prostatic urethra region and irregular filling defect was also shown from the prostatic urethra and the level of the trigon of the bladder. Surgical treatment was selected because of partial urethral obstruction and dysuria. The metastasis at the time of surgery was suspected, and the owner decided euthanasia. We detected lymph metastasis with immunohistochemical staining for pan-cytokeratins (CK) AE1/AE3, confirming their epithelial origin. This report described typical clinical findings, diagnostic imaging and histopathological examination of a prostatic adenocarcinoma.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.386-391
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• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.