• Title/Summary/Keyword: oriented thick film

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Fabrication of Oxide Thick Film for Renewable Electrical Energy Storage Technology

  • Lee, Sang-Heon
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.186-189
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    • 2005
  • We have fabricated superconducting HTSC ceramic thick films by chemical process. c-axis oriented HTSC thick films have been attempted bi-axially textured Ni tapes. The x-ray diffraction pattern of the HTSC thick films contained superconducting phase crystal. The critical temperature and critical current density was 110K.

PREPARATION OF HYDROXYAPATITE COATINGS USING R.F. MAGNETRON SPUTTERING

  • Hosoya, Satoru;Sakamoto, Yukihiro;Hashimoto, Kazuaki;Takaya, Matsufumi;Toda, Yoshitomo
    • Journal of the Korean institute of surface engineering
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    • v.32 no.3
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    • pp.307-311
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    • 1999
  • The well-crystalline hydroxyapatite($Ca_{10}(PO_4)_6(OH)_2$ ; HAp) layer having a biocompatibility was successfully coated onto titanium substrate using a radio-frequency magnetron sputtering, and effects of sputtering gas and the thickness of HAp film on a crystal growth of the HAp layers were investigated. The deposition rate of the layer sputtered with water-vapour gas was slower than that of the layer sputtered with argon gas. The results of X-ray diffraction demonstrated that the about $0.8\mu\textrm{m}$ thick HAp film under water-vapour gas was an amorphous phase, the about $1.2\mu\textrm{m}$ thick film was (100) plane-oriented HAp, and the about $1.5\mu\textrm{m}$ thick film was (001)plane-oriented HAp. FT-IR analysis proved that hydroxyl group of the layer sputtered with argon gas was defected, but that of the layer sputtered with water-vapour gas was not defected. From these results, it was favorable to use water-vapour gas on the HAp coatings onto metal surface.

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Thickness Dependence of the Crystallization of FePt/MgO(001) Magnetic Thin Films (FePt/MgO(001) 자성박막 결정화의 두께의존성)

  • Jeung, Ji-Wook;Yi, Min-Soo;Cho, Tae-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.2
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    • pp.153-158
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    • 2010
  • The crystallization of FePt/MgO(001) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 499-$\AA$-thick, face-centered tetragonal, ordered FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 816-$\AA$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

Crystallization of FePt/MgO(100) magnetic thin films (FePt/MgO(100) 자성박막의 결정화 연구)

  • Jeung, Ji-Wook;Cho, Tae-Sik;Yi, Min-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.278-279
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    • 2005
  • The crystallization of FePt/MgO(100) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 500-${\AA}$-thick, ordered (fct) FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 812-${\AA}$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

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Zone-melting of EPD $YBa_2Cu_3O_x$ Thick Film under Low Oxygen Partial Pressure

  • Soh, Dea-Wha;Fan, Zhanguo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.263-266
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    • 2003
  • The fine $YBa_2Cu_3O_x$ powder ($0.2{\sim}1.0\;{\mu}m$) is produced by sol-gel method, and electrophoresis deposition is used for the preparation of $YBa_2Cu_3O_x$ thick films which are deposited on Ag wire. The oriented $YBa_2Cu_3O_x$ was tried to be prepared by the zone-melting method under low oxygen partial pressure. The orientation and the phase composition were examined by the X-ray diffraction and the superconductivities were measured by 4 line method. The critical current densities are still quite low, which may be due to unsuitable technical parameters for zone-melting of $YBa_2Cu_3O_x$ thick films. Therefore the heat treatment condition and controlling of low oxygen partial pressure should be improved in the future experiment.

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The Effect of the precursor powder composition for Bi-system superconducting thick films on Cu tapes (동테이프 위의 Bi-계 초전도 후막에서 전구체분말 조성의 영향)

  • 한상철;성태현;한영희;이준성;김상준
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.65-68
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    • 1999
  • A well oriented Bi2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-O mixture powder on a copper plate and heat-treating at 820-88$0^{\circ}C$ for several minute in air. During the heat-treatment, the printing layer partially melted by reaction between the Cu-free precursor and CuO of the oxidizing copper plate. In the partial melting state, it is believed that the solid phase is Bi-free phase and Cu-rich phase and the composition of the liquid is around Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. Following the partial melting, the Bi2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. With decreasing the Bi composition in the precursor powder, the critical temperature(T$_{c}$) of the fabricated Bi2212 thick film increased to about 79 K.K.

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Growth of Oriented Thick Films of BaFe12O19 by Reactive Diffusion

  • Fisher, John G.;Vu, Hung;Farooq, Muhammad Umer
    • Journal of Magnetics
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    • v.19 no.4
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    • pp.333-339
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    • 2014
  • Single crystal growth of $BaFe_{12}O_{19}$ by the solid state crystal growth method was attempted. Seed crystals of ${\alpha}-Fe_2O_3$ were pressed into pellets of $BaFe_{12}O_{19}$ + 2 wt% $BaCO_3$ and heat-treated at temperatures between $1150^{\circ}C$ and $1250^{\circ}C$ for up to 100 hours. Instead of single crystal growth taking place on the seed crystal, BaO diffused into the seed crystal and reacted with it to form a polycrystalline reaction layer of $BaFe_{12}O_{19}$. The microstructure, chemical composition and structure of the reaction layer were studied using scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), x-ray Diffraction (XRD) and micro-Raman scattering and confirmed to be that of $BaFe_{12}O_{19}$. XRD showed that the reaction layer shows a strong degree of orientation in the (h00)/(hk0) planes in the sample sintered at $1200^{\circ}C$. $BaFe_{12}O_{19}$ layers with a degree of orientation in the (hk0) planes could also be grown by heat-treating an ${\alpha}-Fe_2O_3$ seed crystal buried in $BaCO_3$ powder.

Effects of ZnO Buffer Layer Thickness on the Crystallinity and Photoluminescence Properties of Rf Magnetron Sputter-deposited ZnO Thin Films (rf 마그네트런 스퍼터링법으로 Si 기판위에 증착한 ZnO 박막의 결정성과 photoluminescence 특성에 대한 Zn 완충층 두께의 영향)

  • Cho, Y.J.;Park, An-Na;Lee, Chong-Mu
    • Korean Journal of Materials Research
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    • v.16 no.7
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    • pp.445-448
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    • 2006
  • Highly c-axis oriented ZnO thin films were grown on Si(100)substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL) and Atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by rf magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

Electron Scattering at Grain Boundaries in Tungsten Thin Films

  • Choe, Du-Ho;Kim, Byeong-Jun;Lee, Seung-Hun;Jeong, Seong-Hun;Kim, Do-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.243.2-243.2
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    • 2016
  • Tungsten (W) is recently gaining attention as a potential candidate to replace Cu in semiconductor metallization due to its expected improvement in material reliability and reduced resistivity size effect. In this study, the impact of electron scattering at grain boundaries in a polycrystalline W thin film was investigated. Two nominally 300 nm-thick films, a (110)-oriented single crystal film and a (110)-textured polycrystalline W film, were prepared onto (11-20) Al2O3 substrate and thermally oxidized Si substrate, respectively in identical fabrication conditions. The lateral grain size for the polycrystalline film was determined to be $119{\pm}7nm$ by TEM-based orientation mapping technique. The film thickness was chosen to significantly exceed the electron mean free path in W (16.1 and 77.7 nm at 293 and 4.2 K, respectively), which allows the impact of surface scattering on film resistivity to be negligible. Then, the difference in the resistivity of the two films can be attributed to grain boundary scattering. quantitative analyses were performed by employing the Mayadas-Shatzkes (MS) model, where the grain boundary reflection coefficient was determined to be $0.42{\pm}0.02$ and $0.40{\pm}0.02$ at 293 K and 4.2 K, respectively.

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Characteristics of ZnO Thin Film for SMR-typed FBAR Fabrication (FBAR 소자제작을 위한 ZnO 박막 증착 및 특성)

  • Shin, Young-Hwa;Kwon, Sang-Jik;Kim, Hyung-Jun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.2
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    • pp.159-163
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    • 2005
  • This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.