• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.81-84
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• 2010

Al-doped ZnO (AZO) films were prepared by an Ar:$H_2$ gas radio frequency (RF) magnetron sputtering system with a AZO ($2\;wt{\cdot}%\;Al_2O_3$) ceramic target at the low temperature of $100^{\circ}C$ and annealed in hydrogen ambient at the temperature of $300^{\circ}C$. To investigate the influence of the $H_2$ flow ratio on the properties of the AZO films, the $H_2$ flow ratio was changed from 0.5% to 2%. As a result, the AZO films, deposited with a 1% $H_2$ addition, showed a resistivity of $11.7\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$. When the AZO films were annealed at $300^{\circ}C$ for 1 hour in a hydrogen atmosphere, the resistivity decreased from $11.7\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$ to $5.63\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$. The lowest resistivity of $5.63\;{\times}\;10^{-4}{\Omega}{\cdot}cm$ was obtained by adding 1% hydrogen gas to the deposition and annealing process. The X-ray diffraction patterns of all the films showed a preferable growth orientation in the (002) plane. The spectrophotometer measurements showed that the transmittance of 85% was obtained by the film deposited with the $H_2$ flow ratio of 1% at 940 nm for GaAs/GaAlAs LEDs.

• 한국재료학회지
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• 제15권8호
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• pp.491-495
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• 2005

(Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.

• 한국표면공학회지
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• 제35권1호
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• pp.39-46
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• 2002

$Cu_2$$ZnSnS_4$(CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. Thin films were deposited on ITO glass substrates using a compact target which were made by $Cu_2$S, ZnS, SnS$_2$ powder at room temperature by rf magnetron sputtering and were annealed in the atmosphere of Ar and $S_2$(g). We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2$$ZnSnS_4$ composition. Structure was coarsened with increasing temperature and (112), (200), (220), (312) planes appeared to conform to all the reflection Kesterite structure. A (112) preferred orientation was advanced with increasing the annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.51 to 1.8eV as the annealing temperature increased. The optical absorption coefficient of the thin film was about $10^4$$cm^{-1}$.

• 한국전기전자재료학회논문지
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• 제19권5호
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• pp.461-466
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• 2006

To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $100^{\circ}C$ and 15 mTorr, and the purity of target is ZnO 5 N. The ZnO thin films were in-situ annealed at $600^{\circ}C$ in $O_2$ atmosphere. The thickness of ZnO thin films has implemented about $1.6{\mu}m$ at SEM analysis after in-situ annealing process. We have investigated the crystal structure of substrates, and so structural properties of ZnO thin films has estimate by using XRD, FWHM, FE-SEM and AFM. XRD and FE-SEM showed that ZnO thin films grown on substrates had a c-axis preferential orientation in the [0001] crystal direction. XPS spectra showed that ZnO thin film was showed a peak positions corresponding to the O1s and the Zn2p. As form above XPS, we showed that the atom ratio of Zn:O related 1:1.1504 on ZnO thin film, so we could obtained useful information for p-type ZnO thin film.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.65-74
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• 2009

Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

• 한국전자통신학회논문지
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• 제8권9호
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• pp.1319-1324
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• 2013

Mean-Shift 알고리즘은 목표모델과 후보영상 사이의 컬러분포의 유사도를 이용하는 국부적 탐색기법으로서, 그 기법의 단순성 및 안정성 면에서 뛰어나 얼굴추적에 많이 이용되고 있다. 그러나 컬러분포를 이용한 얼굴추적은 목표모델과 유사한 컬러분포를 갖는 객체나 배경의 영향에 취약하다. 또한 얼굴 추적에서 결정되는 얼굴영역은 얼굴인식 혹은 얼굴방향 등을 계산할 때 중요한 단서가 되는데, 완전히 다른 컬러분포를 갖는 객체의 가려짐으로 얼굴영역의 크기나 위치가 변동될 위험이 있다. 대체로 거리정보는 얼굴과 배경의 구분에 효율적이고 컬러정보는 객체 구분에 유리하다는 가정으로부터, 본 논문에서는 이러한 문제를 해결하기 위해 거리 정보와 컬러 정보를 함께 이용하는 양방향 필터를 고안하고, 이것을 Mean-Shift 알고리즘에 활용하였다. 일련의 실험을 통해 성공적인 실험결과를 얻었다.

• 한국재료학회지
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• 제21권7호
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• pp.371-376
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• 2011

We report on the effects of $TiO_2$ doping power on the characteristics of multicomponent $TiO_2$-ITO (TITO) electrodes prepared by a multi-target sputtering system with tilted cathode guns. Both as-deposited and annealed TITO electrodes showed linearly increased sheet resistance and resistivity with increasing $TiO_2$ doping power. However, the TITO electrodes exhibited a fairly high optical transmittance regardless of the $TiO_2$ doping power due to the high transparency of the $TiO_2$. Although the annealed TITO showed much lower sheet resistance and resistivity relative to the as-deposited samples, the electrical properties of the annealed samples exhibited similar dependence on the $TiO_2$ power to the as-deposited samples. In addition, it was found that doping of an anatase $TiO_2$ in the ITO electrode prevented the preferred (222) orientation of the TITO electrodes. Although the TITO electrode showed higher sheet resistance and resistivity than that of the pure ITO electrode, it offers a very smooth surface and usage of a low-cost Ti element. It is thus considered a promising multicomponent transparent conducting electrode for cost-efficient flat panel displays and photovoltatics.

• 철학연구
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• 제146권
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• pp.1-24
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• 2018

본 논문의 목적은 생명윤리에 대한 이론 윤리학이 갖는 의미를 탐색하는데 있다. 첫 번째로 싱어가 제시하고 있는 이익평등고려의 원칙과 선호공리주의가 생명윤리 분야 내에서 어떠한 의미와 한계점을 갖는지 살펴본다. 두 번째로 칸트 윤리학이 생명윤리 분야에서 갖는 중요성을 강조해 보고, 그럼에도 부족했던 관점을 알아본다. 마지막으로 아리스토텔레스의 덕윤리가 생명윤리로 실현되어야 하는 이유를 살펴보고, 이를 통해 인간 삶의 의미를 제언하고자 한다. 싱어의 주장은 기존 윤리학사(倫理學史)에서 고려하지 못했던 진화한 생명에 대한 새로운 화두를 던져준다. 그는 당연시 되었던 인간 존엄에 대해 부정할 수 없는 차원의 의견을 제시하였다고 볼 수 있다. 또한, 생명 존중 대상에 대한 범위 확장을 합리적으로 이루었다고 평가할만하다. 이와 구분하여, 칸트 윤리학은 인간 존엄의 의미를 형이상학적 의미를 근거하여 설명한다. 더 나아가 인간 삶의 올바른 방향성을 제시한다. 그들의 주장을 수용함에도 결핍되었던 삶의 의미는 아리스토텔레스의 덕윤리의 적용을 통해 해소될 수 있을 듯하다. 인간을 비롯한 존재자의 삶의 의미는 생명, 더 나아가 존재 자체에 내재된 것일 수 있다.

• 소성∙가공
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• 제28권1호
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• pp.43-48
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• 2019

Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

• 한국음향학회지
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• 제38권2호
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• pp.231-239
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• 2019

소나 체계에서 표적의 거리를 수동으로 추정하는 방법은 활발히 연구되고 있는 분야이다. 본 논문은 배열 불변성을 기반으로 여러 환경과 소나 매개변수에 따른 거리 추정 성능을 제시한다. 배열 불변성은 천해에서의 음원 거리 추정 기법으로서, 상세한 환경 정보가 불필요하며 연산 량이 적어 실시간 거리 추정이 가능하다는 장점을 가진다. 본 논문에서는 기법의 성능을 확인하기 위해서 모의실험을 수행하였고, 2013년 진해항 인근에서 수행된 해상실험 데이터에 본 알고리듬을 적용하였다. 본 연구는 모의 실험을 통하여 음원의 방위각, 송신 신호의 길이, 그리고 수신 배열의 길이에 따른 거리 추정 성능을 보여준다. 또한, 네스티드 배열과 균일 선배열에 대한 거리 추정 결과를 비교하였다.