• Journal of Institute of Control, Robotics and Systems
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• v.22 no.8
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• pp.579-584
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• 2016

When surgical instruments are tracked in an image-guided surgical navigation system, a stereo vision system with high accuracy is generally used, which is called optical tracker. However, this optical tracker has the disadvantage that a line-of-sight between the tracker and surgical instrument must be maintained. Therefore, to complement the disadvantage of optical tracking systems, an internal vision sensor is attached to a surgical instrument in this paper. Monitoring the target marker pattern attached on patient with this vision sensor, this surgical instrument is possible to be tracked even when the line-of-sight of the optical tracker is occluded. To verify the system's effectiveness, a series of basic experiments is carried out. Lastly, an integration experiment is conducted. The experimental results show that rotational error is bounded to max $1.32^{\circ}$ and mean $0.35^{\circ}$, and translation error is in max 1.72mm and mean 0.58mm. Finally, it is confirmed that the proposed tool tracking method using an internal vision sensor is useful and effective to overcome the occlusion problem of the optical tracker.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.799-808
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• 1995

Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$\square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$\times$10-2, they were increased to the values of 81% and 1kΩ/$\square$, respectively. The films with the resistivities of 1.2~1.4$\times$10-3 Ω.cm, mobilities of 11~13 $\textrm{cm}^2$/V.sec and carrier concentrations of 3.5$\times$1020~4.0$\times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$\times$10-2~1.0$\times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $\AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.10 no.2
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• pp.69-75
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• 1985

The proposed seal identification procedure consists of the smoothing, rotation, thinning, and matching techniques. The seal images which are scanned by CCTV are thresholded into the binary prctures of $256{\times}256$ pixels through A/D converter and 6502 microcomputer. After the sample and target images are ratated into an identical orientation, a thinning process is used to extract the skeletons of the character strobes. The wighted map is constructed by distance weight from which the distance weighted correlation C is computed. The C is compared with the dicision constant C or C for the purpose of seal indentification. The identification rate is 95% and the total CPU time is less than 3 minutes for each identification in the experiment.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.41-45
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• 2016

ITO/GZO double layered thin films were prepared on transparent glass substrates. Ga-doped ZnO(GZO) films were deposited by RF magnetron sputtering using an ZnO:Ga (98: 2 wt%) target. The post deposition annealing process was conducted for 30 minutes at different temperature of 100, 200, 300 and $400^{\circ}C$, respectively. As increase annealing temperature, ITO/GZO double layered thin films show the increment of the prefer orientation of ZnO diffraction peak (002) in the XRD patterns. We obtained Ga-doped ZnO thin films with a lowest resistivity of $1.84{\times}10^{-4}{\Omega}-cm$ at $400^{\circ}C$ and transparency above 80% in visible ranges. The figure of merit obtained in this study means that ITO/GZO double layered thin films which annealed at $400^{\circ}C$ have the highest optoelectrical performance in this study.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.289-293
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• 1994

Thin films of YB $a_{2}$C $u_{3}$$O_{7-x}$ supercondYB $a_{2}$C $u_{3}$$O_{7-x}$uctor were prepared on (100) SrTi $O_{3}$ substrates by pulsed laser deposition using visible light laser. Q-switched Nd:YAG(532 nm, 30 ns) pulsed laser was used for deposition. The effects of substrate temperature and oxygen pressure during deposition on films were studied. Critical current density of 2.93*10$^{6}$ A/c $m^{2}$ at 77K and Tc(zero)=91.7K were obtained from the film prepared with Tsub=745.deg. C and $P_{02}$=200 mTorr. XRD analysis showed that the grown film has c-axis normal orientation to the substrate surface and has single phase. Surface morphology of the film has been improved by interfering the plume ejected from YB $a_{2}$C $u_{3}$$O_{7-x}$ target.arget.t.

• ETRI Journal
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• v.37 no.4
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• pp.766-771
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• 2015

Robust motion estimation for human-computer interactions played an important role in a novel method of interaction with electronic devices. Existing pose estimation using a monocular camera employs either ego-motion or exo-motion, both of which are not sufficiently accurate for estimating fine motion due to the motion ambiguity of rotation and translation. This paper presents a hybrid vision-based pose estimation method for fine-motion estimation that is specifically capable of extracting human body motion accurately. The method uses an ego-camera attached to a point of interest and exo-cameras located in the immediate surroundings of the point of interest. The exo-cameras can easily track the exact position of the point of interest by triangulation. Once the position is given, the ego-camera can accurately obtain the point of interest's orientation. In this way, any ambiguity between rotation and translation is eliminated and the exact motion of a target point (that is, ego-camera) can then be obtained. The proposed method is expected to provide a practical solution for robustly estimating fine motion in a non-contact manner, such as in interactive games that are designed for special purposes (for example, remote rehabilitation care systems).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.463-466
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• 2001

In recent year, Ferroelectric BLT($Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$) is a promising candidate materials. This study was Practiced to make good conditions of BLT targets. In this study, calcination and sintering temperature were kept at 75$0^{\circ}C$, 110$0^{\circ}C$ for 2 hour respectively. the density obtained 7.612, 7.98, 7.877 g/㎤ as La$_2$O$_3$ contents were 0.0mol%, 0.25mo1%, 0.5mol%. Especially, the lanthanum content of 0.5 mol% measured C-axis (117) preferred orientation more than the others targets in the XRD. In $\varepsilon$$_{r}$-f relationship using by HP 4194 A impedance analyzer, the 0.5 mol% observed above 200 relative dielectric constant. but the dissipation factor was higher than others targets at 100Hz~13MHz range. SEM photograph with the content of La$_2$O$_3$ was observed like rod and plate types.types.s.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.706-712
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• 1997

AlN(Aluminium Nitride) thin films were prepared using by RF sputtering method on the Si(100) and Si(111) substrates as the parameters of the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio and investigated by X-ray diffraction, IR spectrometry, n&k analyzer. For the Si(100) substrate, the AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. For the Si(111) substrate, the (002) AlN thin films were obtained under the nitrogen of 100 vol.%. In case of the thin film prepared in the condition of above 60 vol.% of the nitrogen, the average value of the surface roughness of the film was 151$\AA$. From the changes of the half widths of E$_1$[TO] phonon bands at the wavenumber of 680$cm^{-1}$ /, it were compared of the crystallinities of the films which were grown under the different conditions. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.%. Its due to the nitridation of the Al target surface and getting low of the sputtering yield by the $N_2$/Ar ratio being increased.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3304-3306
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• 1999

In this study, we used the sputtering method with single target to obtain the thick and uniform PZT($PbZrTiO_3$) films for micromached IR sensor application. Then, we investigated the etching characteristics and conditions which is necessary process to fabricate the IR sensor. We tested the C-axis orientation and P-E loop of the deposited PZT films with the XRD and RT66A, respectively. Also we investigated the surface of the films by the AFM and SEM analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.124-130
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• 2003

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, $\theta/2\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity. and surface roughness highly depended on $Ar/O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7{\Omega}cm$ was obtained at a working pressure of 10 mTorr with $Ar/O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with $Ar/O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.