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Structural, Optical and Electrical Properties of GZO Thin Film for Annealing Temperature Change by RF Magnetron Sputtering System  

Lee, Yun seung (Department of Semiconductor Engineering, Cheongju University)
Kim, Hong bae (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.15, no.4, 2016 , pp. 41-45 More about this Journal
Abstract
ITO/GZO double layered thin films were prepared on transparent glass substrates. Ga-doped ZnO(GZO) films were deposited by RF magnetron sputtering using an ZnO:Ga (98: 2 wt%) target. The post deposition annealing process was conducted for 30 minutes at different temperature of 100, 200, 300 and $400^{\circ}C$, respectively. As increase annealing temperature, ITO/GZO double layered thin films show the increment of the prefer orientation of ZnO diffraction peak (002) in the XRD patterns. We obtained Ga-doped ZnO thin films with a lowest resistivity of $1.84{\times}10^{-4}{\Omega}-cm$ at $400^{\circ}C$ and transparency above 80% in visible ranges. The figure of merit obtained in this study means that ITO/GZO double layered thin films which annealed at $400^{\circ}C$ have the highest optoelectrical performance in this study.
Keywords
GZO; ITO; RF magnetron sputtering; Annealing;
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Times Cited By KSCI : 3  (Citation Analysis)
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