• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.411-414
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.

• Corrosion Science and Technology
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• 제8권3호
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• pp.93-102
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• 2009

The direct-current electroetching of high purity aluminum in hot aqueous-chloride solution produces a high density of micrometer-wide tunnels whose walls are made up of the {100} planes and penetrate aluminum in the <100> directions at rates of micrometer per second. In the process of the alternating-current pitting of aluminum, cathodic polarization plays an important role in the nucleation and growth of the pits during the subsequent polarization. The direct-current tunnel etching and alternating-current etching of aluminum are basically related to the formation of poorly crystallized or amorphous passive films. If the passive film forms on the wall, a natural misfit exists between the film and the aluminum substrate, which in turn gives rise to stress in both the film and the substrate. Even though the amorphous films do not have directed properties, their stresses are influenced by the substrate orientation. The films on elastically soft substrate are likely to be less stressed and more stable than those on elastically hard substrate. The hardest and softest planes of aluminum are the {111} and {100} planes, respectively. Therefore, the films on the {111} substrates are most likely to be attacked, and those on the {100} substrates are least likely to be attacked. For the tunnel etching, it follows that the tunnel walls tend to consist of the {100} planes. Meanwhile, the tunnel tip, where active corrosion takes place, tend to be made of four closely packed {111} planes in order to minimize the surface energy, which gives rise to the <100> tunnel etching.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2501-2503
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PTO layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PTO layer of c-axial orientation raised thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PTO layer were measured, too.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1428-1430
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• 1995

In this study we fabricate Knife type Si-tip array using (110) Si wafer. We can fabricate vertical structure by anisotropic etching using EPW and observe it by SEM. After the step, we perform isotropic etching and oxidation sharpening of the structure and also observe it by SEM, respectively. The purpose of isotropic etching is to reduce the oxidation time. We attain a optimal tip whose radius is about $100{\AA}$ after anisotropic etching 2.25 min.+isotropic etching 5 min.+oxidation 1 hour and 23 min.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.815-819
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• 1998

The silicon-nirtide membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PRO($PbTiO_3$ ) layer for a IR detection was coated on the membrane and its characteristics were measured. The a attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer were eliminated through the method of bonding/etching of silicon wafer. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by the PTO layer were measured, too.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.818-821
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• 2003

Sn-doped $In_{2}O_{3}$ (ITO) thin film is one of the materials widely on research not only in the academic fields but also in industrial fields because of their transparency, high conductivity and good adhesion characteristics on substrate. ITO thin films are usually preferred oriented to one of the (222), (400), and (440) planes during crystallization process, which is dependent on processing variables. The preferred orientation affects electrical, optical and etching properties of the films. In this study, thin films of preferred oriented in different orientation were fabricated by controlling processing variables. The crystallization behavior, grain size, surface roughness, transparency and electrical properties of the thin films in different orientation were examined.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.79-79
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• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.

• 한국자동차공학회논문집
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• 제4권5호
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• pp.9-15
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• 1996

A silicon microaccelerometer is designed and fabricated using silicon epitaxial layers for automotive electronic airbag applications. A cantilever structure is chosen for high sensitivity and piezoresistive detection method is adopted for circuit simplicity and low cost. An optimum design is used to find optimum microstructure sizes for maximum sensitivity subject to performance requirements and design constraints on natural frequency, damping ratio, maximum allowable stress and microfabrication limitations. The microaccelerometer is fabricated by micromachining processing steps, composed of material-selective and orientation-dependent chemical etching techniques. Fabricated prototype shows a sensitivity of 88.6$\mu\textrm{V}$/g within a resonant frequency of 1.75KHz. Estimated performance of the microaccelerometer is compared with measured one. Discrepancy between the theoretical values and the experimental values is discussed together with possible sources of the errors.

• 한국정밀공학회지
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• 제23권7호
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• pp.138-145
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• 2006

A nanopatterning technique was proposed and demonstrated for low cost and mass productive process using the scanning probe lithography (SPL) and soft lithography. The nanometer scale structure is fabricated by the localized generation of oxide patterning on the H-passivated (100) silicon wafer, and soft lithography was performed to replicate of nanometer scale structures. Both height and width of the silicon oxidation is linear with the applied voltagein SPL, but the growth of width is more sensitive than that of height. The structure below 100 nm was fabricated using HF treatment. To overcome the structure height limitation, aqueous KOH orientation-dependent etching was performed on the H-passivated (100) silicon wafer. Soft lithography is also performed for the master replication process. Elastomeric stamp is fabricated by the replica molding technique with ultrasonic vibration. We showed that the elastomeric stamp with the depth of 60 nm and the width of 428 nm was acquired using the original master by SPL process.

• 한국진공학회지
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• 제9권2호
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• pp.99-101
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• 2000

Submicron aperture 제작 기술은 near field optical sensor 또는 liquid metal ion source에 응용될 수 있는 가능성으로 인해 흥미를 모으고 있다. 본 실험에서는 submicron aperture 제작에 대해 기술할 것이다. 먼저 2 $\mu\textrm{m}$크기의 dot array를 광학 리소그라피 방법으로 패턴화하였다. KOH 비등방성 식각 방법으로 V-groove형을 만든 후, $1000^{\circ}C$에서 600분동안 건식 산화작업을 거쳤다. 이 산화과정에서 결정 방향에 따라 산화율이 달라지게 되는데 Si(111)면은 Si(100)면에 비해 산화율이 커서 두꺼운 산화막이 형성되며, 이 막은 연이은 건식식각 과정에서 etch-mask로 활용된다. Reactive ion etching은 ICP (Inductively Coupled Plasma) 장비를 사용하였으며, V-groove의 바닥에 형성된 90nm두께의 SiO$_2$와 그 아래의 Si을 식각하였다. 이 때, 기판에 걸린 negative bias는 $Cl_2$ RIE의 anisotropic etchig 효과를 증대시키는 것 같았으며, SEM촬영 결과 식각 후에 Si(111)면 위에는 약 130 nm정도의 산화층이 잔류하고 있었다. 이렇게 형성된 Si aperture는 향후 NSOM sensor등에 적용될 수 있을 것이다.