• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.307-311
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• 2014

Because of a waveguiding effect and total internal reflection caused by a difference in refractive indices, only 20% of generated light is emitted to the air and the rest is trapped or absorbed in the device. An improvement of outcoupled efficiency of organic light-emitting diodes was studied using a microlens array. Mold of microlens array was fabricated by using photo-lithography with the AZ9260 photoresist, and the microlens array was formed onto the glass substrate using the UV curing agent named ZPU13-440. Device structure consists of microlens/glass/ITO/TPD/$Alq_3$/LiF/Al. It was found that there is an improvement of external quantum efficiency by about 20% at the same current density for the device with the microlens array compared to that of the reference one. Simulated outcoupled efficiency shows the improvement by about 20% for the device with the microlens array compared to that of the reference one. These results are consistent with the experimental ones.

• Journal of Information Display
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• v.5 no.4
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• pp.12-17
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• 2004

A series of statistical random copolymers of dioctylfluorene (DOF) and 3,4-ethylenedioxythiophene (EDOT) were synthesized by Ni (0) mediated polymerization and their light-emitting properties were compared with poly (9,9-di-n-octylfluorene) (PDOF). The synthesized polymers were characterized using UV-vis spectroscopy, TGA, photoluminescence (PL) & electroluminescence (EL) spectroscopy and by conducting molecular weight studies. The resulting polymers were found to be thermally stable and readily soluble in organic solvents. The UV-visible absorption and PL emission spectra of the copolymers were gradually red-shifted as the fraction of EDOT in copolymers increased. Light-emitting devices were fabricated in an ITO (indium-tin oxide)/PEDOT/polymer/Ca/Al configuration. Interestingly, the EL spectra of these devices were similar to the PL spectra of the corresponding polymer film. However, the EL devices constructed from the copolymer showed more than 10 times higher efficiency level than the devices constructed from the PDOF homopolymer. This higher efficiency is possibly the result of better charge carrier balance in the copolymer systems due to the lower HOMO levels of the copolymers in comparison to that of PDOF homopolymer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.961-963
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• 2002

Organic electroluminesencent device have been studied because of its easy fabrication and high brightness for plate panel display instead of cathode ray tube. There are some device structure for full color filter system can be applicable to the full color application if the blue light organic electroluminesencent device(OELD) is developed. In this study, we fabricated OELD of ITO/CuPc/PBD/LiF/Al using mixed of 500, 600, $700[{\AA}]$ by vacuum method as a emitting layer. We studied the voltage-current, voltage-luminance characteristics and blue light emission of OELD,

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.601-604
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• 1999

Electroluminescence(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. Recently, many EL researcher have interested a new emissive organic material. In this study, light-emitting organic electroluminescent devices were fabricated using Langmuir-Blodgett(LB) technique with new emissive organic material. This new emissive organic material were synthesis by our teams and we called PECCP [poly(3,6-N-2ethylhexyl carbazoly cyanoterephthalidene)] which has strong electron donor group and electron acceptor group in main chain repeat unit. This material has good solubility in common organic solvent such as chloroform. THF, etc. and has a good stability in air. In here, the new emissive material is applied to Langmuir-Blodgett(LB) method because our new material has a good stability in air. Optimum conditions of film deposition were examined by a surface pressure-area( $\pi$ -A) isotherms with various factors. The LB film were deposited on a indium Tin Oxide(ITO) glass. We were investigated by measuring current-voltage(I-V) characteristics. Also we were measured the UV/visible absorption at about 410nm and PL spectrum at about 530nm. We are attempt to the electroluminescence device properties of the new emissive material by Langmuir-Blodgett(LB) technique.

• Journal of the Optical Society of Korea
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• v.15 no.4
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• pp.362-367
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• 2011

Organic ($Alq_3$) film, which was coated on a donor plate, was transferred to an organic light emitting diode (OLED) substrate with help of heat generated by a dithering laser beam. The laser beam was diffracted in an acousto-optic modulator (AOM), then focused on the laser-to-heat converting layer of the donor plate; the focused spot followed trajectories guided by rotation of a Galvano-mirror. Three different functional waveforms, sine wave, square wave, and saw tooth wave were applied to the AOM as modulation signal to generate the dithering beam. The fluorescence microscope images of the donor plate showed that the patterns of removed $Alq_3$ film were affected considerably by the modulation waveforms and the phase difference between adjacent dithering beams. Further, the printed images of Alq3 film on the OLED substrate were different from the patterns of removed Alq3 film. Atomic force microscope images indicated that not only direct transfer but also deposition by sublimated vapor of Alq3 contributed to the pattern formation. Printed patterns affected considerably the electricity-to-light conversion characteristics of OLEDs. For uniform transfer, not only the phase relation of dithering beam lines but also adequate waveform were important.

• Korean Journal of Optics and Photonics
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• v.29 no.6
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• pp.262-267
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• 2018

In this paper, we designed a new antireflective film to improve the optical efficiency of organic light-emitting diode displays (OLEDs). The reflection characteristics in the normal and side viewing directions of OLEDs with the antireflective film were calculated, depending on the degree of polarization and transmittance of the currently used polarizer when used in the antireflective film of an OLED. The results showed that when the polarization degree of the commercial polarizer (99.990~99.995%) is lowered to 99.900%, the average reflectance of the antireflective film is increased by about 0.1% (2.5% in terms of rate of increase) which is difficult to notice with the human eye, while the transmittance is increased by 1.63~3.34% (4.2~8.2% in terms of rate of increase). This study provides an optimal design for high-light-efficiency OLEDs with good antireflection properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.943-949
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• 2000

In this paper, the single and double heterostructure organic light-emitting devices(OLEDs) were fabricated. The single heterostructure OLED(TYPE 1) is consisted of TPD as a HTL(hole transfer layer) and Alq$_3$as an EML(emitting layer). The double heterostructure OLED(TYPE 2) is consisted of TPD as a HTL, Alq$_3$as an EML and PBD as an ETL(electron transfer layer). The another double heterostructure OLED(TYPE 3) is consisted of TPD as a HTL, PBD as an EML and Alq$_3$as an ETL. We obtained a strong green emission device with maximum EL emission wavelength 500nm in TYPE 3. When the applied voltage was 12V, the emission luminescence was 120.9cd/㎡. The chromaticity index of TYPE 3 was x=0.29, y=0.50. In the characteristic plot of current-voltage, TYPE 3 device was turned on at 6.9V. This voltage was a fairly low turn-on voltage. TYPE 1 and 2 device were turned on at 10V and 8.9V respectively. These types showed no good properties over that of TYPE 3.

• Bulletin of the Korean Chemical Society
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• v.35 no.6
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• pp.1670-1674
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• 2014

Two red emitters, 2-(7-(4-(diphenylamino)styryl)-2-methyl-4H-chromen-4-ylidene)malonitrile (Red 1) and 2-(7-(julolidylvinyl)-2-methyl-4H-chromen-4-ylidene)malonitrile (Red 2) have been designed and synthesized for application as red-light emitters in organic light emitting diodes (OLEDs). In these red emitters, the julolidine and triphenyl moieties were introduced to the emitting core as electron donors, and the chrome-derived electron accepting groups such as 2-methyl-(4H-chromen-4-ylidene)malononitrile were connected to electron donating moieties by vinyl groups. To explore the electroluminescence properties of these materials, multilayered OLEDs using red materials (Red 1 and Red 2) as dopants in $Alq_3$ host were fabricated. In particular, a device using Red 1 as the dopant material showed maximum luminous efficiencies and power efficiencies of 0.82 cd/A and 0.33 lm/W at $20mA/cm^2$. Also, a device using Red 2 as a dopant material presented the CIEx,y coordinates of (0.67, 0.32) at 7.0 V.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1583-1586
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• 2006

All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.352-357
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• 2007

Since a pattern defects "repair" system using a diode pumped solid state laser for Flat Panel Display (FPD) was suggested, a lot of laser systems have been explored and developed for mass-production microfabrication process. A maskless lithography system using 405 nm violet laser and Digital Micromirror Device (DMD) has been developed for PDP and Liquid Crystal Display (LCD) Thin Film Transistor (TFT) photolithography process. In addition, a "Laser Direct Patterning" system for Indium Tin Oxide (ITO) for Plasma Display Panel(PDP) has been evaluated one of the best successful examples for laser application system which is applied for mass-production lines. The "heat" and "solvent" free laser microfabrications process will be widely used because the next-generation flat panel displays, Flexible Display and Organic Light Emitting Diode (OLED) should use plastic substrates and organic materials which are very difficult to process using traditional fabrication methods.