• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.2 no.1
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• pp.3-9
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• 2009

Although Active matrix organic light emitting diode (AMOLED) display has a better image quality in terms of viewing angle, contrast ratio, and response time than liquid crystal displays (LCDs), it still has some critical issues such as lifetime, residual images, and brightness non-uniformity due to non-uniformity in electrical characteristics of driving TFTs and IR drops on supplied power line. Among them, we improved irrecoverable residual images of AMOLED displays which is mainly related to the hysteresis characteristics of driving TFTs. We consider four kinds of surface treatment conditions before gate oxide deposition for improving hysteresis characteristics. We can reduce the hysteresis level of p-channel TFT to 0.23 V, interface trap states between the poly-Si layer and gate insulator to $3.11{\times}10^{11}cm^{-2}$, and output current variation of p-channel TFT to 3.65 % through the surface treatment using ultraviolet light and H2 plasma. Therefore, the recoverable residual image problem of AMOLED displays can be improved by surface treatment using ultraviolet light and $H_2$ plasma.

• Analytical Science and Technology
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• v.17 no.5
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• pp.410-415
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• 2004

In order to learn the emission characteristics of hazardous pollutants associated with environmental tobacco smoking (ETS), we measured the concentrations of major aromatic VOC and carbonyl compounds released from ETS. By acquiring the different smoke types of ETS, we were able to determine that the concentrations of those species range from ppb (normal exhaled air of smoker prior to smoking) to ppm levels (direct release of ETS without filter). Using these measurement data, we also evaluated the body-retaining rate of these compounds as the result of ETS. The results of our analysis indicated that predominant portion of them (e.g., > 99%) are retained as the result of cigarette smoking. To learn more about the potential impact of ETS, more extensive study may be required to assess the gross picture of pollutant deposition inside respiratory intake and their health-effects.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.305-308
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• 2006

Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. For portable applications flexible (or conformable) and rugged displays will be the future. In this paper we outline our progress towards developing such a low power consumption active-matrix flexible OLED $(FOLED^{TM})$ display. We demonstrate full color 100 ppi QVGA active matrix OLED displays on flexible stainless steel substrates. Our work in this area is focused on integrating three critical enabling technologies. The first technology component is based on UDC's high efficiency long-lived phosphorescent OLED $(PHOLED^{TM})$ device technology, which has now been commercially demonstrated as meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active-matrix backplanes, and for this our team are employing PARC's Excimer Laser Annealed (ELA) poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing, and in this device we employ a multilayer thin film Barix encapsulation technology in collaboration with Vitex systems. Drive electronics and mechanical packaging are provided by L3 Displays.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.519-525
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• 2015

Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high $V_{GS}$/low $V_{DS}$ and low $V_{GS}$/high $V_{DS}$ stress conditions through incorporating a forward/reverse $V_{GS}$ sweep and a low/high $V_{DS}$ read-out conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high $V_{GS}$/low $V_{DS}$ stress is applied. On the other hand, when low $V_{GS}$/high $V_{DS}$ stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high $V_{GS}$/low $V_{DS}$ stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low $V_{GS}$/high $V_{DS}$ stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive $V_{GS}/V_{DS}$ stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.5
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• pp.575-582
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• 2011

A cleaning blade is an attachment installed in the toner cartridge of a laser printer for removing the residual toner from an organic photo-conductive drum. There have been many studies on the performance and life of the rubber blade. We focus on optimally designing the blade shape parameters to minimize the maximum stress of the blade while satisfying design constraints on the cleaning performance and part interference. The blade is optimally designed using a design of experiments, meta-models and an optimization algorithm implemented in PIAnO (process integration, automation, and optimization), a commercial PIDO (process integration and design optimization) tool. We integrate the CAE tools necessary for the structural analysis of the cleaning blade, automate the analysis procedure, and optimize the solution using PIAnO. We decreased the maximum stress by 32.6% in comparison with that of the initial design.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.482-488
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• 2001

Platinum group metals (pgm) are useful to many industries such as chemical, dental and medical, petroleum, refining, electrical and electronic, and automotive. Researchers at the South Dakota School of Mines and Technology and PGM Recovery Ltd. have developed jointly an environmentally sound and metallurgically efficient process for extracting these metals from secondary sources. Once these metals have been dissolved in the leach liquor, the individual metals mainly platinum, palladium, and rhodium, should be separated in order to recover the individual metals with high purity. During this investigation, solvent extraction has been chosen as the method used to achieve the separation and extraction of platinum, palladium, and rhodium from the leach liquor. There were three solutions used throughout this procedure: 1) Synthetic solution (200 ppm Pt 80 ppm Pd 20 ppm Rh; 300 ppm Pt, 180 ppm Pd 50 ppm Rh), and 2) Auto catalyst leach liquors (100 ppm Pt, 30 ppm Pd, 20 ppm Rh). The solvents investigated included Lix 84(2-hydroxy-5-nonylacetonphenone oxime in a mixture with 5-dodecylsalicyloxime), Lix 84-I, ACORGA CLX-50 (diester of pyridine 3,5 dicarboxylic acid), and di-hexyl sulfide. The extraction values achieved using ACORGA CLX-50, Lix 84, and Lix 84-I were respectively Pt (25%, 0% 0%), Pd (100%, 99.8%, 95.3%), and Rh (99.1%, 35.5%, 4.25%). The stripping processes for the Lix 84, and Lix 84-I were proven to be more involved than others. The solutions were required to be simultaneously heated and stirred. The percentages acquired through these processes yielded unsatisfactory results. The stripping procedure for the ACORGA CLX-50 was easier to execute, yet the percentage recovered from this process was also unsatisfactory. Overall the di-hexyl sulfide has proved to be the most successful organic for this procedure. The average percent extracted for palladium was excellent with 99.9% - 100% with very little Platinum and rhodium extracted. The ability of stripping palladium in ammonia solution was also found to be excellent.

• Proceedings of the KSRS Conference
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• 2008.10a
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• pp.61-64
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• 2008

Seasonal distribution of the oceanic water intrusion was investigated using satellite SST (sea surface temperature) and chl-a (chlorophyll-a) images taken by the MODIS Aqua sensor. The warm water mass emanating periodically from the meandering Kuroshio Current brings the oceanic water intrusion, known as the 'Kyucho' phenomenon, into Kagoshima bay during the winter. Satellite SST images and buoy robot data show that this warm water intrusion has the characteristics of a semigeostrophic gravity current influenced by the Coriolis effect. However, it is difficult to find the oceanic water intrusion during the summer season considering that it is accompanied by thermal stratification, and SST shows almost the same temperature between the inner side of the bay and the ocean. In this research, the satellite chl-a images taken by MODIS Aqua were employed instead of SST images to reveal the oceanic water intrusion in each season. The enclosed bay has the tendency to undergo eutrophication caused by organic materials from land and differences in chl-a concentration of the bay water and the oceanic water. As a result, distribution of low concentration chl-a with oceanic water intrusion in summer season shows almost the same pattern in winter season. On the other hand, in spring season, both SST and chl-a images are available to differentiate the oceanic water intrusion. Therefore, applying the suitable satellite sensor images for each season is effective in the monitoring of oceanic water intrusion. Moreover, in this area, SST and chl-a distribution reveal not only the oceanic water intrusion into Kagoshima bay but also the intrusion at Fukiage seashore facing East China Sea.

• Journal of IKEEE
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• v.24 no.3
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• pp.719-726
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• 2020

A threshold-voltage sensing circuit is proposed to compensate for pixel aging in active matrix organic light-emitting diodes. The proposed threshold-voltage sensing circuit consists of sample-hold (S/H) circuits and a single-ended successive approximation register (SAR) analog-to-digital converter (ADC) with a resolution of 10 bits. To remove a scale down converter of each S/H circuit and a voltage gain amplifier with a signl-to-differentail converter, the middle reference voltage calibration and input range calibration for the single-ended SAR ADC are performed in the capacitor digital-to-analog converter and reference driver. The proposed threshold-voltage sensing circuit is designed by using a 180-nm CMOS process with a supply voltage of 1.8 V. The ENOB and power consimption of the single-ended SAR ADC are 9.425 bit and 2.83 mW, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.427-427
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• 2012

Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding $10^5$; long retention time of over $5{\times}10^4$ sec and high endurance of over 105 programming cycles while maintaining ON/OFF ratio higher $10^3$. This result offers a viable way to fabricate a high performance high-density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.