• Korean Journal of Materials Research
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• v.33 no.12
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• pp.511-516
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• 2023

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with a coplanar structure were fabricated to investigate the feasibility of their potential application in large size organic light emitting diodes (OLEDs). Drain currents, used as functions of the gate voltages for the TFTs, showed the output currents had slight differences in the saturation region, just as the output currents of the etch stopper TFTs did. The maximum difference in the threshold voltages of the In-Ga-Zn-O (a-IGZO) TFTs was as small as approximately 0.57 V. After the application of a positive bias voltage stress for 50,000 s, the values of the threshold voltage of the coplanar structure TFTs were only slightly shifted, by 0.18 V, indicative of their stability. The coplanar structure TFTs were embedded in OLEDs and exhibited a maximum luminance as large as 500 nits, and their color gamut satisfied 99 % of the digital cinema initiatives, confirming their suitability for large size and high resolution OLEDs. Further, the image density of large-size OLEDs embedded with the coplanar structure TFTs was significantly enhanced compared with OLEDs embedded with conventional TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.393-395
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• 2009

We fabricated oxide and oxide/organic hybrid TFTs on a glass substrate using the photolithography process under $200^{\circ}C$. We adopt the solution processed organic ferroelectric materials of P(VDF-TrFE) and polyimide (KSPI) insulator for 1-T structure memory and flexible device, respectively. All devices have successfully operated and showed the possibility of hybrid TFTs for the application to the flexible electronic devices.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.335-336
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• 2007

A new current-programmed pixel circuit for activematrix organic light emitting diodes (AMOLEDs), based on Organic TFTs (OTFTs), is proposed and verified by SPICE simulations. The simulation results show that the proposed pixel circuit, which is a current mirror structure consisting of five Organic TFTs and one capacitor, has reliable linear characteristics between input current and output OLED current. Also, the threshold voltage degradation of Organic TFTs due to long time operation stress is well compensated to reliable values.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.278.1-278.1
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• 2014

Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.

• Journal of the Korean Applied Science and Technology
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• v.30 no.2
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• pp.290-296
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• 2013

We analysed interfacial traps in organic thin-film transistors (TFTs) in which pentacene and 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) organic semiconductors were deposited by means of vacuum-thermal evaporation and drop-coating methods, respectively. The thermally-deposited pentacene film consists of dentritic grains with the average grain size of around 1 m, while plate-like crystals over a few hundred microns are observed in the solution-processed TIPS-pentacene film. From the transfer characteristics of both TFTs, lower subthreshold slope of 1.02 V/decade was obtained in the TIPS-pentacene TFT, compared to that (2.63 V/decade) of the pentacene transistor. The interfacial trap density values calculated from the subthreshold slope are about $3.4{\times}10^{12}/cm^2$ and $9.4{\times}10^{12}/cm^2$ for the TIPS-pentacene and pentacene TFTs, respectively. Herein, lower subthreshold slope and less interfacial traps in TIPS-pentacene TFTs are attributed to less domain boundaries in the solution-processed TIPS-pentacene film.

• Journal of Information Display
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• v.9 no.2
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• pp.5-8
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• 2008

Bottom gate thin film transistors (TFTs) with microcrystalline and amorphous Si (a-Si) double active layers (DAL) were fabricated. Since the process of DAL TFTs can use that of conventional a-Si TFTs, these DAL TFT process has advantages, such as low cost, large substrate, and mass production capacity. In order to analyze the degradation characteristics in saturation region for driving TFTs of active matrix organic light emitting diode, three different dynamic stresses were applied to DAL TFTs and a-Si TFTs. The threshold voltage shift of DAL TFTs and a-Si TFTs during 10,000 second stress is 0.3V and 2V, respectively. DAL TFTs were more reliable than a-Si TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1216-1219
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• 2007

We have been developing printed organic TFTs for flexible displays. In this study, we have pay attention to the operation stability improvement of the organic TFTs, and studied several factors especially depending on the dielectric layers. From the detailed analysis of the effects of dielectric layers, we have proposed a new printed dielectric layer which is mainly consisting of metal oxide and gives high operation stability

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.470-470
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• 2013

Recently, active materials such as amorphous silicon (a-Si), poly crystalline silicon (poly-Si), transition metal oxide semiconductors (TMO), and organic semiconductors have been demonstrated for flexible electronics. In order to apply flexible devices on the polymer substrates, all layers should require the characteristic of flexibility as well as the low temperature process. Especially, pentacene thin film transistors (TFTs) have been investigated for probable use in low-cost, large-area, flexible electronic applications such as radio frequency identification (RFID) tags, smart cards, display backplane driver circuits, and sensors. Since pentacene TFTs were studied, their electrical characteristics with varying single variable such as strain, humidity, and temperature have been reported by various groups, which must preferentially be performed in the flexible electronics. For example, the channel mobility of pentacene organic TFTs mainly led to change in device performance under mechanical deformation. While some electrical characteristics like carrier mobility and concentration of organic TFTs were significantly changed at the different temperature. However, there is no study concerning multivariable. Devices actually worked in many different kinds of the environment such as thermal, light, mechanical bending, humidity and various gases. For commercialization, not fewer than two variables of mechanism analysis have to be investigated. Analyzing the phenomenon of shifted characteristics under the change of multivariable may be able to be the importance with developing improved dielectric and encapsulation layer materials. In this study, we have fabricated flexible pentacene TFTs on polymer substrates and observed electrical characteristics of pentacene TFTs exposed to tensile and compressive strains at the different values of temperature like room temperature (RT), 40, 50, $60^{\circ}C$. Effects of bending and heating on the device performance of pentacene TFT will be discussed in detail.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1455-1458
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• 2008

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are fabricated on flexible organic polymer foil substrates. As-fabricated performance, electrical bias-stability at elevated temperatures, electrical response under mechanical flexing, and prolonged mechanical stability of the TFTs are studied. TFTs made on plastic at ultra low process temperatures of $150^{\circ}C$ show initial electrical performance like TFTs made on glass but large gate-bias stress instability. An abnormal saturation of the instability against operation temperature is observed.