• Korean Journal of Materials Research
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• v.8 no.6
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• pp.493-498
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• 1998

CdTe films were deposited by close spaced sublimation with various substrate temperatures, cell areas, and thicknesses of CdTe and ITO layers and their effects on the CdS/CdTe solar cells were investigated. The resistivity of CdTe layers employed in this study was 3$\times$ $10^{4}$$\Omega$cm For constant substrate temperature the optimum substrate ternperature for CdTe deposition was $600^{\circ}C$. To obtain larger grain size and more compact microstructure, CdTe film was initially deposited at 62$0^{\circ}C$, and then deposited at 54$0^{\circ}C$. The CdTe film was annealed at 62$0^{\circ}C$ and $600^{\circ}C$ sequentially to maintain the CdTe film quality. The photovoitaic cell efficiency improved by the "two-wave" process. For constant substrate temperature, the optimum thickness for CdTe was 5-6$\mu m$. Above 6$\mu m$ CdTe thickness, the bulk resistance of CdTe film degraded the cell performance. As the cell area increased the $V_{oc}$ remained almost constant, while $J_{sc}$ and FF strongly decreased because of the increase of lateral resistance of the ITO layer. The optimum thickness of the ITa layer in this study was 300~450nm. In this experiment we obtained the efficiency of 9.4% in the O.5cm' cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency.

• Progress in Superconductivity
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• v.9 no.2
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• pp.167-172
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• 2008

We fabricated $YBa_2Cu_3O_{7-x}$(YBCO) films on (00l) $LaAlO_3$ substrates prepared by metal organic deposition(MOD) method using trifluoroacetate(TFA) solution. The films with various thicknesses were prepared by repeating the dip-coating and calcining processes. The effects of film thickness on phase formation, microstructures, and critical properties were evaluated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The microstructure and resultant critical current($I_C$) and critical current density($J_C$) varied remarkably with film thickness: The ($I_C$) value increased from 39 to 160 A/cm-width as the number of coatings increased from one to four, while the corresponding $J_C$ was measured to be in the range of $0.84-1.21\;MA/cm^2$. Both the $I_C$ and $J_C$ decreased when an additional coating was applied due to microstructural degradation, indicating that the optimum thickness is in the range of $1.1-1.8\;{\mu}m$. The possible cause for the decrease in the $I_C$ and $J_C$ value for film thicker than $1.8\;{\mu}m$ include non-uniform thickness, increased surface roughness, and the poor formability of the YBCO phase and texture arising from the insufficient heat treatment time with respect to the increased thickness.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.21-27
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• 2001

Epoxy/BaTiO$_3$composite film type capacitors with excellent stability at room temperature, uniform thickness, and electrical properties over a large area were successfully fabricated. We fabricated composite capacitor films with good film formation capability and easy process ability, from ACF-resin as a matrix and two kinds of BaTiO$_3$powders as fillers to increase the dielectric constant of the composite film. The crystal structure of the powders and its effects on dielectric constant of the films were investigated by X-ray diffraction. DSC and dielectric properties tests were conducted to decide the right curing temperature and the optimum amount of the curing agent. As a result, the capacitors of $7{\mu}{\textrm}{m}$ thick film with 10nF/cm2 and low leakage current were successfully demonstrated.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.232-235
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• 2007

Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.235-237
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• 2016

Oxide/metal/oxide (OMO) thin films were fabricated using amorphous indium-gallium-zinc-oxide (a-IGZO) and an Ag metal layer on a glass substrate at room temperature. The optical and electrical properties of the a-IGZO/Ag/a-IGZO samples changed systemically depending on the thickness of the Ag layer. The transmittance in the visible range tends to decrease as the Ag thickness increases while the resistivity, carrier concentration, and Hall mobility tend to improve. The a-IGZO/Ag (13 nm)/a-IGZO thin film with the optimum Ag thickness showed an average transmittance (T_av) of 71.7%, resistivity of 6.63 × 10⁻⁵ Ω·cm and Hall mobility of 15.22 cm²V⁻¹s⁻¹.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.27-31
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• 2017

AZO/Ag/AZO multi-layer films deposited on glass substrate by RF magnetron sputtering and thermal evaporator have a much better electrical properties than Al-doped ZnO thin films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. The optimum thickness of Ag layers was determined to be $90{\AA}$ for high optical transmittance and good electrical conductivity. The Ag layers thickness $90{\AA}$ is an optical transmittance greater than 80% of visible light and the obtained multilayer thin film with the low resistivity of $8.05{\times}10-3{\Omega}cm$ and the low sheet resistance $5.331{\Omega}/sq$. Applying to TCO and Solar electrode will improve efficiency.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.30-35
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• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• Bulletin of the Korean Chemical Society
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• v.18 no.1
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• pp.56-61
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• 1997

Lead zirconate titanate (PZT) thin fills were deposited onto the Pt/Ti/SiO2/Si substrate by the pulsed laser deposition with the second harmonic wavelength (532 nm) of Nd:YAG laser. In order to determine the optimum conditions for the film deposition, the phase of the films were investigated as functions of ambient oxygen pressure, substrate temperature, and laser fluence. Also the chemical composition analysis was conducted for the PZT films deposited under various ambient oxygen pressure. When the distance between substrate and bulk PZT target is set to 20 mm, the optimum conditions have been determined to be 3 torr of oxygen pressure, 1.5 J/cm2 of laser fluence, and 823-848(±10) K range of substrate temperature. At these conditions, perovskite phase PZT films were obtained on platinized silicon. The chemical composition of the films is very similar to that of PZT bulk target. The physical structure of the deposited films analyzed by scanning electron microscopy shows a columnar morphology perpendicular to the substrate surface. Capacitance-Voltage hysteresis loop measurements show also a typical characteristics of ferroelectric thin film. The dielectric constant is found to be 528 for the 0.48 μm thickness of PZT thin film.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1989-1991
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• 1999

This paper presents characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-$(5{\sim}25%)N_2$). The physical and electrical characteristics of these films investigated with the thickness range $3500{\AA}$ of CrN thin films, annealing temperature $(100{\sim}300^{\circ}C)$ and annealing $(24{\sim}72hr)$. The optimized condition of CrN thin-film strain gauges were thickness range of $3500{\AA}$ and annealing condition($300^{\circ}C$, 48 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, ${\rho}=1147.65{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=$-186ppm/^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. And change in resistance after annealing for the CrN thin-films were quitely linear and stable.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.911-919
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• 1994

As the study for preparation of single-layer anti-reflective coating on glass, the conditions of synthesis of sol for coating and of reproducible coating procedure were investigated. In case of water-based sol, coating was impossible because of poor wettability of sol. The Substitution of solvent with ethanol improved the wettability of sol on the glass surface, and optimum amount of ethanol for substitution was 70 vol%. Maximum specific surface area and total pore volume of water-based sol were 268.7$m^2$/g and 0.315 cc/g, but after substitution, those values increased to 404.1 $m^2$/g and 0.376 cc/g, respectively. The upper limit withdrawl speed of coating in order to get clean coated films without aggregations or stains was 7 cm/min. In case of addition of 0.1 mol HNO3 and substitution with 70 vol% ethanol and heat-treatment at 40$0^{\circ}C$ for 1 hour, thin film with thickness of 94 nm was obtained at withdrawl speed of 4 cm/min. The thickness of thin film was independent of drying time.