• 제목/요약/키워드: optimum film thickness

검색결과 204건 처리시간 0.026초

Properties of IZTO Thin Films on Glass with Different Thickness of SiO2 Buffer Layer

  • Park, Jong-Chan;Kang, Seong-Jun;Yoon, Yung-Sup
    • 한국세라믹학회지
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    • 제52권4호
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    • pp.290-293
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    • 2015
  • The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{\Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.

건식법에 의해 제조된 내열성 폴리이미드박막의 열적특성 및 습도감지특성 (Thermal and Humidity Sensing Properties of Heat Resistant Polyimide Thin Film Manufactured by Dry Process)

  • 임경범;김기환;황선양;김종윤;황명환
    • 전기학회논문지
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    • 제56권6호
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    • pp.1080-1086
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    • 2007
  • The aim of this paper is to establish the optimum fabrication condition of specimens, using the Vapor Deposition Polymerization Method(VDPM), which is one of modesto prepare functional organic thin films using a dry process, and to develop a thin film type humidity sensor which has good humidity sensitive characteristics. The inner part of the film became denser and roughness of the film surface eased as curing temperature increased so that thickness of the film could be made uniform. This also shows the appropriate curing temperature was $250^{\circ}C$. The basic structure of the humidity sensor is a parallel capacitor which consists of three layers of Aluminum/Polyimide/Aluminum. The result of SEM and AFM measurement shows that the thickness of PI thin films decreased and the refraction increased as curing temperature increased, which indicates that a capacitance-type humidity sensor utilizing polyimide thin film is fabricated on a glass substrate. The characteristics of fabricated samples were measured under various conditions, and the samples had linear characteristics in the range of 20-80 %RH, independent of temperature change, and low hysteresis characteristic.

유압 베인 펌프에서의 탄성유체윤활 해석 (Elastohydrodynamic Lubrication Analysis in Hydraulic Vane Pump)

  • 박태조
    • 드라이브 ㆍ 컨트롤
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    • 제10권3호
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    • pp.7-13
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    • 2013
  • Hydraulic vane pumps are widely used in various hydraulic systems because of its compactness and light weight. It is well known that the vanes and cam ring are separated by very thin liquid films which result in the EHL state. Contrary to the case of cylindrical roller bearings, the inlet and side boundary pressures are much higher than the atmospheric pressure. In this paper, a numerical solution of the EHL of finite line contacts between the cam ring and vane tip with profiled ends is presented. Using a finite difference method with non-uniform grids and the Newton-Raphson method, converged solutions are obtained for moderate load and material parameters. The EHL pressure distribution and film shape are considerably affected by pump delivery pressure and the side boundary condition applied. Both the maximum pressure and the minimum film thickness always occurred near the edge regions. The present results can be used in the design of optimum vane profile in hydraulic vane pump.

주석 및 아연 박막이 코팅된 베어링 표면의 구름 저항 거동에 대한 실험적 고찰 (An Experimental Study on the Rolling Resistance of Bearing Surfaces Coated by Pure Tin and Zinc Films)

  • 양승호;공호성;윤의성;김대은
    • Tribology and Lubricants
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    • 제14권1호
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    • pp.1-6
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    • 1998
  • An experimental study was performed to discover the tribological behaviors of pure tin and zinc coated 52100 bearing steel. Pure tin coatings ranging from 30 nm to 30,000 nm and pure zinc coatings ranging from 500 nm to 52,000 nm were produced by a thermal evaporation coating method. Experiments using a thrust ball bearing-typed rolling test-rig were performed for the investigations of the effect of coating thickness on the tribological rolling behavior. Results showed that the existence of optimum film thickness which revealed minimum rolling resistance was discovered for tin and zinc coating. The compatibility of coating material to iron showed no significant effect on the rolling resistance behavior. The hardness of coating material revealed significant influence to the rolling resistance behavior.

대면적 박막 태양전지 적용을 위한 CdTe 박막의 화학적기계적연마 공정 특성 (Chemical Mechanical Polishing Characteristics of CdTe Thin Films for Application to Large-area Thin Film Solar Cell)

  • 양정태;신상헌;이우선
    • 전기학회논문지
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    • 제58권6호
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    • pp.1146-1150
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    • 2009
  • Cadmium telluride (CdTe) is one of the most attractive photovoltaic materials due to its low cost, high efficiency and stable performance in physical, optical and electronic properties. Few researches on the influences of uniform surface on the photovoltaic characteristics in large-area CdTe solar cell were not reported. As the preceding study of the effects of thickness-uniformity on the photovoltaic characteristics for the large-area CdTe thin film solar cell, chemical mechanical polishing (CMP) process was investigated for an enhancement of thickness-uniformity. Removal rate of CdTe thin film was 3160 nm/min of the maximum value at the 200 $gf/cm^2$ of down force (pressure) and 60 rpm of table speed (velocity). The removal rate of CdTe thin film was more affected by the down force than the table speed which is the two main factors directly influencing on the removal rate in CMP process. RMS roughness and peak-to-valley roughness of CdTe thin film after CMP process were improved to 96.68% and 85.55%, respectively. The optimum process condition was estimated by 100 $gf/cm^2$ of down force and 60 rpm of table speed with the consideration of good removal uniformity about 5.0% as well as excellent surface roughness for the large-area CdTe solar cell.

상부산화 조건에 따른 N/O($SiO_2$/$Si_3$$N_4$) 구조막의 신뢰성 평가 (Reliability of N/O($SiO_2$/$Si_3$$N_4$) Films According to Top Oxidation Condition)

  • 구경완;홍봉식
    • 전자공학회논문지A
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    • 제29A권9호
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    • pp.20-28
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    • 1992
  • Dielectric thin film of N/O ($Si_{3]N_{4}/SiO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(dry & pyrogenic oxidation methods) of the top 7nm $Si_{3]N_{4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high resolution TEM, AES and SIMS. The insulating characteristics(I-V characteristics) were investigated by HP 4145, and the characteristics of TDDB (Time Dependent Dielectric Breakdown) were evaluated by using CCST(Current Constant Stress Time) method. In this experiment, The optimum oxidation condition for preparation of good insulating and TDDB characteristics of N/O film was pyrogenic oxidation at 85$0^{\circ}C$ for 30 minutes. The leakage current was reduced from 400pA to 7.5pA when SiO$_{2}$ film with thickness of 2nm was formed on the top of $Si_{3]N_{4}$ film by the pyrogenic oxidation method.

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Dry Film Photoresist를 이용한 테프론 PCB 위 미세 피치 솔더 범프 형성 (Formation of Fine Pitch Solder Bumps on Polytetrafluoroethylene Printed Circuit Board using Dry Film Photoresist)

  • 이정섭;주건모;전덕영
    • 마이크로전자및패키징학회지
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    • 제11권1호
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    • pp.21-28
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    • 2004
  • Polytetrafluoroethylene (PTFE/Teflon ) 인쇄회로기판용 미세 피치 솔더 범프 형성을 위해 dry film photoresist (DFR)를 photolithography 공정에 적용하였다. DFR lamination을 위한 test board는 폭 100$\mu\textrm{m}$와 두께 18$\mu\textrm{m}$의 copper line들이 100-200$\mu\textrm{m}$의 간격으로 배열된 형태로 디자인하였다. 15$\mu\textrm{m}$의 두께를 갖는 DFR을 hot roll laminator를 사용하여 lamination 온도와 속도를 변화시켜가면서 lamination 공정 실험을 수행하였다. 실험 결과, PTFE 인쇄회로기판에 DFR을 lamination하는 공정의 최적 조건은 lamination 온도 $150^{\circ}C$, 속도 약 0.63cm/s였다. UV exposure 및 development 공정을 거쳐 저융점 솔더 재료인 인듐을 증착하였다. DFR 박리 순서에 따른 두 가지 다른 reflow 공정을 통해 최소 지름 50$\mu\textrm{m}$, 최소 피치 100$\mu\textrm{m}$를 갖는 인듐 솔더 범프를 형성하였다.

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모빌리티법을 이용한 동하중을 받는 저널 베어링의 최적설계 (Optimum Design of Dynamically-Loaded Journal Bearings by Mobility Method)

  • 심현해;김창호;오박균;권오관
    • Tribology and Lubricants
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    • 제2권2호
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    • pp.32-43
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    • 1986
  • The mobility method is used for optimizing dynamically-loaded journal bearings. Connecting -rod bearings in both diesel and gasoline engines are optimized by parametric studies of bearing span and clearance. The inertia effect of the connecting-rod is also included in this study. Minimum film thickness, maximum film pressure, and friction loss are calculated to satisfy the design conditions in both engines.

Sensitivity and Error Propagation Factors for Three-Parameter Ellipsometry

  • Ihm, Hye-Ran;Chung, Gyu-Sung;Paik, Woon-Kie;Lee, Duck-Hwan
    • Bulletin of the Korean Chemical Society
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    • 제15권11호
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    • pp.976-980
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    • 1994
  • The sensitivity factors and the error propagation factors are defined for the three-parameter ellipsometry (TPE). The sensitivity factor is useful for understanding the nature of the TPE measurements in connection with determination of the optical properties and the thickness of a film. On the other hand, the error propagation factors provide a quantitative tool for predicting the optimum condition for TPE experiments. Their usefulness is demonstrated for the passive film formed on nickel in aqueous solution.

Si 기판에 제작된 AAO 박막의 기공 형성 최적화에 관한 연구 (A Study of Pore Formation of AAO Film on Si Substrate with Optimizing Process)

  • 권순일;양계준;송우창;이재형;임동건
    • 한국전기전자재료학회논문지
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    • 제21권5호
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    • pp.415-420
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    • 2008
  • AAO films were fabricated on two kinds of substrates such as $Al/SiO_2/Si$ and Al/Ni/Ti/Si. To obtain well-aligned AAO film, we optimized process condition for buffer layer, electrolyte and voltage. In the case of oxalic acid, the AAO film with pore size of approximately 45 nm was obtained at voltage of 40 V, temperature of $10^{\circ}C$, oxalic acid of 0.3 M and widening time of 60 min. Then the thickness of barrier is less than 600 nm. In the case of sulfuric acid, the AAO film has pore size of 40 nm and barrier thickness of 400 nm with optimum conditions such as voltage of 25 V, temperature of $8^{\circ}C$, sulfuric acid of 0.3 M and widening time of 60 min.