• Macromolecular Research
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• v.16 no.8
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• pp.725-733
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• 2008

Polyimide (PI) multilayer thin films were prepared by spin-coating from a poly(amic acid) (PAA) and poly(amic acid) ammonium salt (PAAS). PI was prepared from pyromellitic dianhydride (PMDA) and 4,4'-oxydianiline (ODA) PAA. Different compositions of PAAS were prepared by incorporating triethylamine (TEA) into PMDA-ODA PAA in dimethylacetamide. PI multilayer thin films were spin-coated from PMDA-ODA PAA and PAAS. The PAAS comprising cationic and anionic moieties were spherical with a particle size of $20{\sim}40\;nm$. Some particles showed layers with ammonium salts, despite poor ordering. Too much salt obstructed the interaction between the polymer chains and caused phase separation. A small amount of salt did not affect the interactions of the interlayer structure but did interrupt the stacking between chains. Thermogravimetric analysis (TGA) showed that the average decomposition temperature of the thin films was $611^{\circ}C$. All the films showed almost single-step, thermal decomposition behavior. The nanostructure of the multilayer thin films was confirmed by X -ray reflectivity (XRR). The LF 43 film, which was prepared with a 4:3 molar ratio of PMDA and ODA, was comprised of uniformly spherical PAAS particles that influenced the nanostructure of the interlayer by increasing the interaction forces. This result was supported by the atomic force microscopy (AFM) data. It was concluded that the relationship between the uniformity of the PAAS particle shapes and the interaction between the layers affected the optical and thermal properties of PI layered films.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.4
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• pp.13-20
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• 2014

In this paper, the effects of a nonionic surfactant on the etch uniformity and the etch profile during the wet-etching process of high-purity aluminum were investigated for the fabrication of uniform micropattern arrays. To improve the surface roughness of a high-purity aluminum plate, a mechanical lapping process and an electrolytic polishing process were used. After electrolytic polishing process, the surface roughness, Ra, of the high-purity aluminum plate was improved from $1.25{\mu}m$ to $0.02{\mu}m$. A photoresist was used as an etching mask during the aluminum etching process, where the mixture of phosphoric acid, acetic acid, nitric acid, a nonionic surfactant and water was used as the aluminum etchant. Different amounts of the Triton X-100 nonionic surfactant were added to the aluminum etchant to investigate the effect of a nonionic surfactant during the wet-etching process of high-purity aluminum. The etch rate and the etch profile were measured by an optical interferometer and a scanning electron microscope.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.79-84
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• 2013

Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. Although one of the current major research trends of NIL is large-area patterning, the technical difficulties to keep the uniformity of the residual layer become severer as the imprinting area increases more and more. In this paper, with the rolling type imprinting process, a mold, placed upon the $2^{nd}$ generation TFT-LCD glass sized substrate($370{\times}470mm^2$), is rolled by a rubber roller to achieve a uniform residual layer. The prediction of residual layer thickness of the photoresist by rolling of the rubber roller is crucial to design the rolling type imprinting process, determine the rubber roller operation conditions-mpressing force & feeding speed, operate smoothly the following etching process, and so forth. First, using the elasticity theory of contact problem and the empirical equation of rubber hardness, the contact length between rubber roller and mold is calculated with consideration of the shape and hardness of rubber roller and the pressing force to rubber roller. Next, using the squeeze flow theory to photoresist flow, the residual layer thickness of the photoresist is calculated with information of the viscosity and initial layer thickness of photoresist, the shape of mold pattern, feeding speed of rubber roller, and the contact length between rubber roller and mold previously calculated. Last, the effects of rubber roller operation conditions, impressing force & feeding speed, on the residual layer thickness are analyzed with consideration of the shape and hardness of rubber roller.

• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.113-120
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• 2005

Luminous efficiency and uniformity in a LCD-BLU are mainly determined by fine scattering patterns formed on the light guide panel. We propose a novel fabrication method of 3-dimensional scattered patterns based on anisotropic etching of silicon wafers. Micro-pyramid patterns with 70.5 degree apex-angle and micro-prism patterns with 109.4 degree apex-angle can be self-constructed by the wet, anisotropic etching of (100) and (110) silicon wafers, respectively, and those patterns are easily duplicated by the PDMS replica process. Experimental results on spatial and angular distributions of irradiation from the light guide panel with the micro-pyramid patterns were very consistent with the calculation results. Surface roughness of the silicon-based micro-patterns is free from any artificial defects since the micro-patterns are inherently formed with silicon crystal surfaces. Therefore, we expect that the silicon based micro-patterning process makes it possible to fabricate perfect 3-dimensional micro-structures with crystal surface and apex angles, which may guarantee mass-reproduction of the light guide panels in LCD-BLU.

• Korean Journal of Optics and Photonics
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• v.6 no.3
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• pp.233-238
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• 1995

'#65279;We made $P_2O_5-SiO_2$ films on silicon for integrated optics application by low pressure chemical vapor deposition using TEOS(tetraethylorthosilicate), TMPite(trimethylphosphite) and phosphine($PH_3$). And We studied and compared between TMPite and PH, as a dopant of P in PSG films in the aspect of the de,position characteristics. Deposition rate of TMPate-PSG films was $55 \AA/min$ which was smaller than 90 A/min , that of $PH_3-PSG$ films. Thickness deviation of TMPate-PSG films was 2% and that of PH3-PSG was 4.5%. So TMPate-PSG films had a good quality in thickness uniformity. The range of refractive index was controlled from 1.445 to 1.468 at 633 nm in TMPate-PSG films and it was controlled from 1.456 to 1.476 in $PH_3-PSG$ films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.844-848
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• 2012

Encapsulant curing in terms of convection oven leads to thermal induced stress due to nonuniform thermal conductivity in LED package. We have adopted infrared (IR) light for silicone curing in order to release the stress. The light uniformity irradiated on an encapsulant surface is confirmed to be uniform by optical simulation. Shear strength of die paste using IR compared to convection oven is increased 19.2% at the same curing time, which indicates curing time can be shortened. The indentation depth difference between center and edge of silicone encapsulant in terms of convection oven and IR are 14.8% and 3.4%, respectively. Curing by IR also shows 2.3% better radiant flux persistency rate of LED at $85^{\circ}C$ after 1,000 h reliability test compared to convection curing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.398-398
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• 2007

The Liquid Crystal (LC) alignment uniformity is very important in LC devices. The alignment mechanism of LC molecules on a rubbed polyimide (PI) surface is very important for both LC fundamental research and application. So, Generally a rubbing method to align LC has been widely used to mass-produce LCD panels. But because rubbing method is contact method between rubbing fabric and indium-tin-oxide glass or flexible substrate, rubbing method has some defects, such as the electrode charges and the creation of contaminating particles. Thus we strongly recommend a non-contact alignment technique for getting rid of some defects of rubbing method. Most recently, the LC aligning capabilities achieved by ion-beam exposure on the organic and nonorganic thin film surface have been reported successfully. In this research, we studied the tilt angle generation and electro-optical performances for a NLC on homeotropic polyimide surfaces with ion-beam exposure. The LC aligning capabilities of a nematic liquid crystal (NLC) on a homeotropic PI surface using a new ion-beam method were studied. On the homeotropic PI surface, the tilt angle of the NLC by exposure ion-beam had a tendency to decrease as increased ion-beam energy density. And, on the homeotropic PI surface, the alignment character of the NLC with respect to ion-beam energy was good. And we achieved satisfactory result for EO character.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.203.1-203.1
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• 2013

Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

• Korean Journal of Optics and Photonics
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• v.17 no.5
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• pp.437-446
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• 2006

A fabrication method fur high-aspect-ratio microchannels in stainless steel using laser-assisted thermochemical wet etching is reported in this paper. The fabrication of deep microchannels with an aspect ratio over ten is realized by applying a multiple etching process with an optimization of process conditions. The cross-sectional profile of the microchannels can be adjusted between rectangular and triangular shapes by properly controlling laser power and etchant concentration. Excellent dimensional uniformity is achieved among the channels with little heat-affected area. Microchannels with a width ranging from 15 to $50{\mu}m$ can be fabricated with an aspect ratio of ten and a pitch of 150 m or smaller. The effects of process variables such as laser power, scan speed, and etchant concentration on the fabrication results, including etch width, depth, and cross-sectional profile are closely examined.

• Korean Journal of Materials Research
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• v.33 no.11
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.