• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.868-871
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• 2008

We propose an optical-based measuring instrument of catenary system in electric railway. This system was made to utilize line scan camera as inspecting system to measure the stagger and height of overhead contact wire in railway and composed with optical type source and FPGA-based image acquisition system with PCI slot. Vision acquisition software has been used for the application to programming interface for image acquisition, display, and storage with a frequency of sampling. To check the validity of our approach for the intended application, we monitored height and stagger in the overhead wire of a high-speed catenary system in Korea. The proposed optical-based measuring instrument to measure the contact wire geometry such as the hight and stagger shows promising on-field applications for online condition motoring. We expect that a new generation of real-time instruments with demanding various conditions motoring requirement in railway can be easily integrated into optical-based measuring instrument system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.415-415
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• 2007

In this study. it was investigated about optical simulation in direct-type backlight design. Direct-type backlight has been used high-brightness backlight such as LCD television application. The key parameter in designing direct-type backlight was consists of three geometrical dimension such as the distance of two lamps. the gap of lamp and reflection plate and the number of lamps. It has many variation in optical design and it causes the different properties in backlight system. It shows the best values of above parameters; 26mm of the distance of two lamps. 4.5mm of the gap of lamp and reflection plate and 16 lamps. And we produced the specimen as above condition. and acquired good result in backlight such as the value of the brightness is 6436 nit in center of emission area and less than 5% in brightness uniformity. It shows the effective ways of designing backlight system using optical simulation method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.620-625
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• 2007

The effects of $Gd_2O_3$ addition and sintering condition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\Upsilon}$ (secondary electron emission coefficient) than pure MgO protective layer. Relative density and grain size increased with amount of $Gd_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as relative density and grain size. Good optical and electrical properties of ${\Upsilon}$ of 0.138, surface roughness of 5.77 nm and optical transmittance of 95.76 % were obtained for the MgO+100 ppm $Gd_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.367-373
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• 2007

[ $In_2O_3-ZnO(IZO)$ ] and $In_2O_3-ZnO-SnO_2(IZTO)$ thin films were prepared on EAGLE 2000 glass webs in a Ar gas by RF-Magnetron sputtering. Electrical resistivity and optical transmittance of the films were investigated. IZO, IZTO film showed excellent optical transmittance of 85 % at the visible $400{\sim}$780 nm wavelength. Electrical properties of IZO film have $6.50{\times}10^{-4}{\Omega}cm$ (95 $In_2O_3$ : 5 ZnO wt.%) and $5.20{\times}10^{-4}{\Omega}cm$ (90 : 10 wt.%), IZTO film have $8.00{\times}10^{-4}{\Omega}cm$ (90 $In_2O_3$ : 3 ZnO : 7 $SnO_2$ wt.%) and $6.50{\times}10^{-4}{\Omega}cm$ (90 : 7 : 3 wt.%). Substitution of SnO to ZnO in ITO films showed slightly lower electrical conductivity than ITO film but showed similar optical transmittance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.932-938
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• 2007

The structural, optical, and electrical properties of ZnO thin films grown on glass by radio-frequency (rf) magnetron sputtering were investigated. The mixture flow ratio of $O_2$ to Ar, which was operated with sputtering gas, was chosen as a parameter for growing high-qualify ZnO thin films. The structural properties and surface morphologies of the thin films were characterized by the X-ray diffraction and the atomic force microscope, respectively. As for the optical properties of the films, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of ZnO thin films were calculated from the measured data. The crystallinity of the films was improved and the bandgap energy was increased from 3.08 eV to 3.23 eV as the oxygen flow ratio was increased from 0 % to 50 %. Furthermore, The ultraviolet and violet luminescences were observed by using photoluminescence spectroscopy. The hall mobility was decreased with the increase of oxygen flow ratio.

• Current Optics and Photonics
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• v.7 no.3
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• pp.273-282
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• 2023

This paper presents a new method for redistributing effectively the first orders of each lens element to achromatize and athermalize an optical system, by introducing a novel method for adjusting the slope of an achromatic and athermal line. This line is specified by connecting the housing, equivalent single lens, and aberration-corrected point on a glass map composed of available plastic and glass materials for molding. Thus, if a specific lens is replaced with the material characterized by the chromatic and thermal powers of an aberration-corrected point, we obtain an achromatic and athermal system. First, we identify two materials that yield the minimum and maximum slopes of the line from a housing coordinate, which specifies the slope range of the line spanning the available materials on a glass map. Next, redistributing the optical first orders (optical powers and paraxial ray heights) of lens elements by moving the achromatic and athermal line into the available slope range of materials yields a good achromatic and athermal design. Applying this concept to design a mobile-phone camera lens, we efficiently obtain an achromatic and athermal system with cost-effective material selection, over the specified temperature and waveband ranges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.140-144
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• 1995

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.55.4-55
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• 1998

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.742-748
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• 2004

Isopropanol of low boiling point was used as a solvent to prepare Al-doped ZnO(AZO) thin films. A homogeneous and stable sol was made from Zn acetate a solute whose mole concentration was 0.7mol/$\iota$ and Al chloride as a dopant. Al-doped ZnO thin films were prepared by sol-gel method as a function of post-heating temperature from 500 to $700^{\circ}C$ and the optical and electrical properties were investigated. The c-axis orientation along (002) plane was enhanced with the increasing of post-heating temperature and the surface morphology of the films showed a homogeneous and nano-sized microstructure. The optical transmittance of the films post-heated below $650^{\circ}C$ was over $86\%$, but decreased at $700^{\circ}C$. The electrical resistivity of the thin films decreased from 73 to 22 $\Omega$-cm as the post-heating temperature increased up to $650^{\circ}C$, but increased greatly to 580 $\Omega$-cm at $700^{\circ}C$. XPS analysis indicated that the deterioration of electrical and optical properties was attributed to the precipitation of $Al_2O_3$ phase on the surface of AZO thin film. This result suggests that the optimum post-heating temperature to improve electrical and optical properties is $600^{\circ}C$.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.259-264
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• 1996

In this study, we performed a modeling for $K^{+}$ ion-exchanged diffused channel waveguide and waveguide-type optical coupler by Wentzel-Kramer-Brillouin(WKB) dispersion equation, normalized field distribution equation for mode and coupled mode theory, and examined the optical-power-dividing of the optical coupler fabricated by using the modeling condition. The optical-power-dividing was observed at the waveguide-type optical coupler with 3[.mu.m] line-width, 6[.mu.m] space between channel waveguides, and 3[mm] interaction length.h.