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http://dx.doi.org/10.4313/JKEM.2007.20.4.367

Effects of ZnO addition on Electrical Resistivity and Optical Transmittance of ITO Thin Film  

Chae, Hong-Choi (충북대학교 신소재공학과)
Hong, Joo-Wha (충북대학교 신소재공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.4, 2007 , pp. 367-373 More about this Journal
Abstract
[ $In_2O_3-ZnO(IZO)$ ] and $In_2O_3-ZnO-SnO_2(IZTO)$ thin films were prepared on EAGLE 2000 glass webs in a Ar gas by RF-Magnetron sputtering. Electrical resistivity and optical transmittance of the films were investigated. IZO, IZTO film showed excellent optical transmittance of 85 % at the visible $400{\sim}$780 nm wavelength. Electrical properties of IZO film have $6.50{\times}10^{-4}{\Omega}cm$ (95 $In_2O_3$ : 5 ZnO wt.%) and $5.20{\times}10^{-4}{\Omega}cm$ (90 : 10 wt.%), IZTO film have $8.00{\times}10^{-4}{\Omega}cm$ (90 $In_2O_3$ : 3 ZnO : 7 $SnO_2$ wt.%) and $6.50{\times}10^{-4}{\Omega}cm$ (90 : 7 : 3 wt.%). Substitution of SnO to ZnO in ITO films showed slightly lower electrical conductivity than ITO film but showed similar optical transmittance.
Keywords
ITO; ZnO; Optical transmittance; Electrical resistivity;
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