• 제목/요약/키워드: optical lithography simulation

검색결과 26건 처리시간 0.024초

SCS Micro-lens 패턴 적용 휴대폰 도광판 제작용 미세금형 제작에 대한 연구 (A Study on the Fabrication Method of Micro-Mold using 2.2inch LGP by the SCS Micro-Lens Pattern)

  • 오정길;김종선;윤경환;황철진
    • 소성∙가공
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    • 제20권1호
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    • pp.60-63
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    • 2011
  • BLU(back light unit) is one of kernel parts of LCD(liquid crystal display) unit. New 3-D micro-lens pattern for LGP(light guide plate), one of the most important parts of LCD-BLU, had been researched. Instead of dot pattern made by chemical etching or laser ablation, SCS(slanted curved surface) micro-lens pattern was designed with optical CAE simulation. This study introduce the method of design using optical CAE simulation for SCS micro-lens, the new fabrication method of micro-mold with SCS micro-lens pattern.

Focused Ion Beam을 이용한 EUVL Mask Defect Isolation 및 Repair (EUVL Mask Defect Isolation and Repair using Focused Ion Beam)

  • 김석구;백운규;박재근
    • 반도체디스플레이기술학회지
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    • 제3권2호
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    • pp.5-9
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    • 2004
  • Microcircuit fabrication requires precise control of impurities in tiny regions of the silicon. These regions must be interconnected to create components and VLSI circuits. The patterns to define such regions are created by lithographic processes. In order to image features smaller than 70 nm, it is necessary to employ non-optical technology (or next generation lithography: NGL). One such NGL is extreme ultra-violet lithography (EUVL). EUVL transmits the pattern on the wafer surface after reflecting ultra-violet through mask pattern. If particles exist on the blank mask, it can't transmit the accurate pattern on the wafer and decrease the reflectivity. It is important to care the blank mask. We removed the particles on the wafer using focused ion beam (FIB). During removal, FIB beam caused damage the multi layer mask and it decreased the reflectivity. The relationship between particle removal and reflectivity is examined: i) transmission electron microscope (TEM) observation after particle removal, ii) reflectivity simulation. It is found that the image mode of FIB is more effective for particle removal than spot and bar mode.

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Optimization of the growth of $CaF_2$ crystals by model experiments and numerical simulation

  • Molchanov, A.;Graebner, O.;Wehrhan, G.;Friedrich, J.;Mueller, G.
    • 한국결정성장학회지
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    • 제13권1호
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    • pp.15-18
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    • 2003
  • High purity single crystalline calcium fluoride ($CaF_2$) has excellent optical transmission characteristics down to deep UV and is therefore selected as the main optical material for the next generation of lithography apparatus operating at wavelength of 157 nm. The growth of large sized $CaF_2$ single crystals with the required properties for this optical application can be achieved only by optimizing the crystal growth process by the aid of numerical simulation. This needs especially a precise calculation of the heat transport and temperature distribution in the solid and liquid $CaF_2$ under crystal growth conditions. As $CaF_2$ is considered to be semitransparent, the internal radiative heat transfer in $CaF_2$ plays an decisive role in the simulation of the heat transport. On the other hand it is very difficult to obtain quantitative experimental data for evaluating numerical models as $CaF_2$ is extremely corrosive at high temperatures. In this work we present a newly developed experimental technique to perform temperature measurements in $CaF_2$-crystal as well as in the melt under conditions of crystal growth process. These experimental results are compared to calculated temperature data, which were obtained by using different numerical models concerning the internal heat transfer in semitransparent $CaF_2$. It will be shown, that an advanced model, which was developed by the authors, gives a much better agreement with experimental data as a standard model, which was taken from the literature.

Design and Fabrication of Information Security Films with Microlouver Pattern and ZnO Nano-Ink Filling

  • Kim, Gwan Hyeon;Kim, So Won;Lee, Seong Eui;Lee, Hee Chul
    • 한국세라믹학회지
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    • 제56권4호
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    • pp.354-359
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    • 2019
  • Information security films that can ensure personal privacy by reducing the viewing angle of display screens were fabricated by microlouver patterning and a ZnO nano-ink filling process. Optical simulation results demonstrated that all the microlouver films showed good security performances. Security performances were evaluated as calculated relative luminance ratios compared between the side and front. Based on the simulation results, microlouver films were fabricated by UV imprint lithography and nano-ink bar coating. However, distortion of the microlouver pattern occurred with the use of high-viscosity nano-inks such as ZrO2 and TiO2, and the CuO-filled microlouver film suffered from very low optical transmittance. Accordingly, the effects of ZnO filling height on security performance were intensively investigated through simulation and experimental measurements. The fabricated microlouver film with a 75-㎛-high ZnO filling exhibited a good relative luminance ratio of 0.75 at a 60° side angle and a transmittance of 44% at a wavelength of 550 nm.

AttPSM을 사용하는 Metal Layer 리토그라피공정의 Overlay와 Side-lobe현상 방지 (Overlay And Side-lobe Suppression in AttPSM Lithography Process for An Metal Layer)

  • 이미영;이흥주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.18-21
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    • 2002
  • As the mask design rules get smaller, the probability of the process failure becomes higher due to the narrow overlay margin between the contact and metal interconnect layers. To obtain the minimum process margin, a tabbing and cutting method is applied with the rule based optical proximity correction to the metal layer, so that the protection to bridge problems caused by the insufficient space margin between the metal layers can be accomplished. The side-lobe phenomenon from the attenuated phase shift mask with the tight design nile is analyzed through the aerial image simulation for test patterns with variation of the process parameters such as numerical aperture, transmission rate, and partial coherence. The corrected patterns are finally generated by the rules extracted from the side-lobe simulation.

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AttPSM metal layer 리토그라피공정의 side-lobe억제를 위한 Rule-based OPC (Rule-based OPC for Side-lobe Suppression in The AttPSM Metal Layer Lithography Process)

  • 이미영;이홍주;성영섭;김훈
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.209-212
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    • 2002
  • As the mask design rules get smaller, the probability of the process failure becomes higher doc to the narrow overlay margin between the contact and metal interconnect layers. To obtain the minimum process margin, a tabbing and cutting method Is applied with the rule based optical\ulcorner proximity correction to the metal layer, so that the protection to bridge problems caused by the insufficient space margin between the metal layers can be accomplished. The side-lobe phenomenon from the attenuated phase shift mask with the tight design rule is analyzed through the aerial image simulation for test patterns with variation of the process parameters such as numerical aperture, transmission rate, and partial coherence. The corrected patterns are finally generated by the rules extracted from the side-lobe simulation.

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Deformation Analysis of Roll Mold for Nano-flexible Devices

  • Khaliq, Amin;Tahir, Usama;Jeong, Myung Yung
    • 마이크로전자및패키징학회지
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    • 제28권4호
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    • pp.47-50
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    • 2021
  • Nanoimprint lithography (NIL) has revolutionized the fabrications of electronics, photonics, optical and biological devices. Among all the NIL processes, roll-to-roll nanoimprinting is regarded best for having the attributes of low cost, continuous, simple, and energy-efficient process for nanoscale device fabrication. However, large-area printing is limited by the master mold deformation. In this study, a finite element model (FEM) has been constructed to assess the deformation of the roll mold adhesively wrapped on the carbon fiber reinforced material (CFRP) base roll. This study also optimizes the deformations in the metallic roll mold with respect to nip-forces applied in the printing process of nano-fabrication on large scale. The numerical simulations were also conducted to evaluate the deflection in roll mold assembly due to gravity. The results have shown decreasing trend of the deformation with decreasing nip-force. Also, pressure uniformity of about 40% has been optimized by using the current numerical model along with an acceptable deflection value in the vertical axis due to gravity.

PMMA/P(MMA/MAA) 구조에서 0.1$\mu\textrm{M}$ T-gate 형성을 위한 전자빔 리소그래피 공정에 관한 연구 (A study on electron beam lithography for 0.1$\mu\textrm{M}$ T-gate formation at P(MMA/MAA)/PMMA structure)

  • 최상수;이진희;유형준;이상윤
    • 한국재료학회지
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    • 제5권1호
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    • pp.96-103
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    • 1995
  • 30KV 전자빔리소그래피 장치를 사용하여 PMMA 3000$\AA$/P(MMA/MAA) 6000$\AA$의 이중구조에서 foot width 0.1$\mu$m이하, head width 0.4$\mu$m의 T-gate를 형성하였다. PMMA/P(MMA/MAA)/GaAS 구조에 대한 Monte Carlo 시뮬레이션 결과, 산란반경 0.1$\mu$m에서 전방산란전자와 후방산란전자의 에너지 비는 19.5:1로 나타났다. 전자빔리소그래피 공정에 필요한 PMMA 및 P(MMA/MMA)의 열처리 조건, 설게 선폭에 대한 패턴감도를 구하였다. MIBK : IPA = 1 : 1 현상액에 대한 PMMA 및 P(MMA/MAA)의 감마값(gamma value)은 2.3이었다. 광 및 전자빔리소그래피 장치의 혼합사용(mix-and-match) 결과 층간정렬도 (alignment accuracy)는 0.1$\mu$m(3$\sigma$) 이하를 얻었다.

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SRAF를 적용한 극자외선 노광기술용 위상 변위 마스크의 반사도에 따른 이미징 특성 연구 (Evaluation of Imaging Performance of Phase Shift Mask Depending on Reflectivity with Sub-resolution Assist Feature in EUV Lithography)

  • 장용주;김정식;홍성철;조한구;안진호
    • 반도체디스플레이기술학회지
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    • 제14권3호
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    • pp.1-5
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    • 2015
  • In photolithography process, resolution enhancement techniques such as optical proximity correction (OPC) and phase shift mask (PSM) have been applied to improve resolution. Especially, sub-resolution assist feature (SRAF) is one of the most important OPC to enhance image quality including depth of focus (DOF). However, imaging performance of the mask could be varied with the diffraction order amplitude changed by inserting SRAF. Therefore, in this study, we investigated the imaging properties and process margin of attenuated PSM with SRAF. Reflectivities of attenuated PSMs at 13.5 nm were 3, 6, 9% and simulation was performed by $PROLITH^{TM}$. As a result, aerial image properties and DOF as well as diffraction efficiency were improved by increasing the reflectivity of attenuated PSM. Additionally, printed critical dimension variations depending on SRAF width and space error were also reduced for attenuated PSM with high reflectivity. However, SRAF could be printed when reflectivity of attenuated PSM is high enough. In conclusion, optimization of reflectivity of attenuated PSM and SRAF to prevent side-lobe from being printed is needed to be considered.

UVA LED를 이용한 근접 노광용 렌즈 설계 기술 연구 (A Study of Lens Design Technique for Proximity Exposure Using a UVA LED)

  • 이정수;조예지;이현화;공미선;강동화;정미숙
    • 한국광학회지
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    • 제30권4호
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    • pp.146-153
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    • 2019
  • 노광기는 회로 패턴을 원하는 위치에 전사시켜주는 장비로 패턴을 광학적 특성의 변형 없이 기재 상에 나타내기 위해서는 노광광학계의 특성이 매우 중요하다. 따라서 미세회로 패턴을 형성하기 위해서는 조사 면적에 작은 발산각으로 입사되어야 한다. 또한, 광원에서 나온 빛이 감광제와 균일하게 반응해야 하기 때문에 높은 광효율과 조도 균일도를 가져야 한다. 본 논문에서는 협각 구현의 문제점을 해결하기 위한 방법으로 반사형 타입인 파라볼라 반사경과 비구면 렌즈 설계를 진행하였고, 배열 후 시뮬레이션 분석 결과 광속 각도, 균일도, 최대조도가 목표 성능을 만족하는 것을 확인하였다.