• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.236-245
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• 1993

Single crystals, SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr and Ni) are respectively attributed to the electron transitions between the split energy levels of $V^{+2}$, $Cr^{+2}$ and $Ni^{+2}$ ions sited at $T_d$ symmetry of the host lattice.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.177-181
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• 2018

We prepared ZnS thin films via chemical bath deposition (CBD) in an aqueous solution of ammonia ($NH_3$) and hydrazine ($N_2H_4$). The composition ratio of hydrazine used was 0%, 17%, 22%, 29%, or 50%. We investigated the effects of hydrazine and ammonia on the growth, and the structural and optical properties of ZnS in terms of surface uniformity, voids, and grain size. We found that during the growth of ZnS films, hydrazine was very effective for improving the surface morphology and layer uniformity with fast layer formation, while it had no effect on the bandgap energy, $E_g$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.435-440
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• 2002

In this study, we have investigated photo-induced changes of optical energy gap( $E_{OP)}$ and photoluminescence (PL) in amorphous ($\alpha$-) S $e_{100-x}$G $e_{x}$ (x=5, 25 and 33) thin films prepared by conventional thermal evaporation method. In the $\alpha$-S $e_{100-x}$G $e_{x}$ thin film, the $E_{OP}$ is obtained by a linear extrapolation of the ($\alpha$hν)$^{\frac{1}{2}}$ versus hν plot to the energy axis using the optical absorption coefficient ($\alpha$) calculated from the extinction coefficient k measured in the wavelength range of 290~900nm. Although the values of $\Delta$ $E_{OP}$ are very different, all films exhibit photo-induced photo-darkening (PD) effect that is a red shift of $E_{OP}$ . In particular, $\Delta$ $E_{OP}$ in $\alpha$-S $e_{75}$ G $e_{25}$ thin film exhibits the largest value (i, e., $\Delta$ $E^{OP}$ ~40meV for $\alpha$-S $e_{95}$ G $e_{5}$ , $\Delta$ $E_{OP}$ ~200meV for $\alpha$-S $e_{75}$ G $e_{25}$ , $\Delta$ $E_{OP}$ ~130meV for $\alpha$-S $e_{67}$ G $e_{33}$ ). PL spectra in $\alpha$-SeGe by hν$_{HeCd}$ have no-Stokes shift (SS) and show a tendency dependent on both composition and illumination time. We explain the energy-induced phenomena such as the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..tc..

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.660-665
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• 1996

Thin films of indium oxide and indium tin oxide have been prepared by d.c. magnetron sputtering onto the fused silica substrates kept at 90, 200 and $300^{\circ}C$. In order to elucidate the optical absorption process in low energy region below 3 eV, we have analyzed the absorption coefficients obtained from reflectance and transmittance measurements for these films based on the Lucovsky model. It has been found for the first time that a defect center in the band gap is located at 0.8~1.4 eV below the Fermi level in all films and arises from oxygen vacancies in their films. The optical absorption in low energy region is explained to be dominated by the transition of electrons trapped at the positively charged (+2e) oxygen vacancies with s-like nature to the conduction band formed from the 5s-orbit in indium atoms.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.50-60
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• 1997

Undoped, cobalt-doped and erbium-doped $ZnAl_2S_4, ;ZnAl_2Se_4, ;CdAl_2S_4, ;and;CdAl_2Se_4$ single crystals were grown by the chemical transport reaction method. The crystal structures, the lattice constants, the optical energy gaps, and the photoluminescence properties of these single crystals were investigated. Also, the optical transition mechanisms by the impurities of cobalt and erbium were identified from these results.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.59-64
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• 1989

Raman vibrational Q0branch spectra of pure CO are measured by using the technique of quasicw inverse Raman spectroscopy utilizing a pulsed single-frequency laser source. This approach gives enhanced sensitivity compared to earlier work which employed CW lasers, allowing extension of that work to higher accuracy, higher J states, and higher pressure. Fitting laws with pertubation theory and modified energy gap(MEG) theory are described, and the line broadening and shifting coefficients of J=0 to 24 are determined with both fitting laws.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.589-589
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• 2012

Indium sulfide thin films have been grown onto glass substrates using radio frequency magnetron sputtering at room temperature. The as-deposited film were annealed in nitrogen atmosphere at different temperatures of 100, 200, 300, 400 and $500^{\circ}C$ with an 1 h annealing time. The effect of annealing temperature on composition, structure, morphology and optical properties of the as-grown In2S3 films has been studied. The XRD results indicate that the as-deposited films are composed by a mixture of both cubic ${\alpha}$ and ${\beta}$ crystalline phases, with some fraction of tetragonal phase. The thermal annealing on the films produces the conversion of the cubic crystalline phases to the tetragonal ${\beta}$ one and a crystalline reorientation of the latter phase. The surface morphological analysis reveals that the films grown at $300^{\circ}C$ have an average grain size of ~ 58 nm. These films show a S/In ratio of 0.99. The optical band gap is found to be direct and the films grown at $300^{\circ}C$ shows a higher optical transmittance of 80% and an energy band gap of 2.52 eV.

• Solar Energy
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• v.20 no.1
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• pp.73-80
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• 2000

Considering the optical performance of the reflector and analyzing heat losses from the receiver, the optimal diameter of the absorber for a PTC(Parabolic Trough Concentrator) system was numerically determined. The results of this study were compared with the results of the IST (Industrial Solar Technology)-PTC test to verify the validity of the model. Good agreement was obtained with the deviation range from 0.4 to 7.7%. Generally, the net energy gained by the receiver shows the maximum at the particular absorber diameter and the specific gap size between the absorber and the glass envelop because the heat losses from the receiver becomes the minimum. The results showed that the conductive and convective heat losses became the minimum when the gap size was 7 to 10mm. Finally, it was known that the optimal absorber diameter was 62mm at $100^{\circ}C$, 57mm at $150^{\circ}C$, and 53mm at $200^{\circ}C$ of the absorber surface temperature, respectively.

• Korean Journal of Metals and Materials
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• v.50 no.7
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• pp.545-548
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• 2012

The optical and electronic properties of Indium Tin Oxide (ITO) thin films deposited on a RF-plasma treated glass substrate were investigated by X-Ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Reflected Electron Energy Loss Spectroscopy (REELS). The modification of glass substrates was carried out by varying the time of the plasma surface treatment in an oxygen atmosphere. The focus of this research was to examine how the optical and electronic properties of ITO thin films change with the plasma treatment time. The surface energy increased since the carbon bonds were removed from the surface after the glass substrate received the surface treatment. The ITO thin films produced on the glass substrate with surface treatment showed that the high optical transmittance was approximately 85%. The measured band gap energy was as high as 3.23 eV when the plasma treatment time was 60 s and the work function after the treatment was increased by 0.5 eV in comparison to that before the treatment of 60 s. The ITO thin film exhibited an excellent sheet resistance of $2.79{\Omega}/{\Box}$. We found that the optical and electronic properties of ITO thin films can be improved by RF-plasma surface treatment.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.440-448
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• 2004

In this paper, to make a solar cell of II-Ⅵ ZnTe compound semiconductor, we studied for the property of the transparent electrode(AZO) and Buffer layer(ZnO), and for reducing the energyband gap of optical absorber layer which are most effective on its efficiency. The ZnTe thin film was used the optical absorber layer of solar cell. Zn and Te were deposited using the co-sputtering method. The thin film was sputtered RF power of Zn/50W and Te/30W, respectively and a substrate temperature of foot under Ar atmosphere of 10mTorr. The energy band gap of the thin film was 1.73ev Then the thin film was annealed at $400^{\circ}C$ for 10sec under a vacuum atmosphere. The energy band gap of 1.67eV was achieved and the film composition ratio of Zn and Te was 32% and 68%. At the best condition, the Solar Cell was manufactured and the efficiency of 6.85% (Voc: 0.69V, Jsc: 21.408㎃/$cm^2$, Fill factor (FF): 0.46) was achieved.