• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.784-789
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• 1998

In this work, the optical properties of freestanding GaN single crystalline substrate grown by hydride vapor phase epitaxy(HVPE) were investigated. The low temperature PL spectrum in freestanding GaN consists of free and bound exciton emissions, and a deep DAP recombination around at 1.8eV. The optically-pumped stimulated emission in freestanding GaN substrate was observed at room temperature. At the maximum power density of 2MW/$\textrm{cm}^2$, the peak energy and FEHM of stimulated emission were 3.318 eV and 8meV, respectively. The excitation power dependence on the integrated emission intensity indicates the threshold pumping power density of 0.4 MW/$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.286-290
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• 1999

Electroluminescence is occurred when phosphor is located in electric field. In this paper, we made powder electroluminescent device (PELD) with structured ITO film/Phosphor/Insulator/Silver paste. The transparent electrode was ITO film and green(2704-01), orange(2702-02) and blue-green(2703-01) were used as phosphor. The insulator was BaTiO$_3$ and $Y_2$O$_3$, back electrode was silver paste. To investigate electrical and optical properties of PELDs, EL spectrum, Brightness, Transferred charge density using Sawyer-Tower\`s circuit was measured.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2013.10a
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• pp.424-429
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• 2013

The trolley carrying the pod moves along by the airfield runway. The pod through the trolley are subjected to vibration arising from the ground state, the precision optical components in the pod can have a significant impact. The road tests were conducted by using the measurement pod to remove the risk for the project. The measurement pod was composed with the ACRA, sensors, battery. The accelerometers were attached to get the acceleration through the road condition. The PSD envelop was calculated by FFT from the acceleration. The driving safety was proven through comparing the measurement data and MIL-STD-810G specification.

• Korean Journal of Digital Imaging in Medicine
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• v.3 no.1
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• pp.126-132
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• 1997

Purpose : To apply to Program of Auto processor quality control after comparison of Film density variations with amendments to Auto density by using Check density program and Adjust density program of calibration mode into the Laser imager. Methods : Observe Check and Adjust density variations on the Control chart with standard step and value during seven months from December, 1995 to June, 1956 extending twice a week. (1) Measure density value on the steps after printing out 17-step sensitometric pattern of the Check density program. (2) In the same way, measure density values after amending density by using Adjust density program If they are exceeding allowable error limit. Results : In case of Check density program, the exceeding limit rates of Density difference(DD) and Middle density(MD) are: FL-IM3543 DD=75%. MD=72.5%, FL-IMD DD=0%. MD=30.8%(14.5%) After amending density by using Adjust density program, the exceeding limit rates of all both Laser imager were zero percent. The standard deviations are show lower FL-IM D than FL-IM3543 on the Check density control chart, but higher on the Adjust density control chart. Conclusion : (1) Check density variations by printingout sensitometric pattern extending once a week at least for quality control of the Laser imager. (2) In case of a dusty place, check the Laser beam transmission after cleaning Laser optical unit extending once a month. (3) Be sure to measure and check density values by using adjust density program if they are exceeding allowable error limit. (4) Maintain much better film density by performing the adjust density program even if check density values are existed within normal limit.

• ETRI Journal
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• v.43 no.5
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• pp.909-915
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• 2021

GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer-scale characteristics. The surface morphology and electron channeling contrast imaging (ECCI) were used to analyze the material quality of GaAs films. Only 3-㎛ bowing was observed using the 725-㎛-thick Si substrate. The bowing shows similar levels among the samples with DFLs, indicating that the Si substrate thickness mostly determines the bowing. According to the surface morphology and ECCI results, the compressive strained indium gallium arsenide/GaAs DFLs show an atomically flat surface with a root mean square value of 1.288 nm and minimum threading dislocation density (TDD) value of 2.4×10⁷ cm^-2. For lattice-matched DFLs, the indium gallium phosphide/GaAs DFLs are more effective in reducing the TDD than aluminum gallium arsenide/GaAs DFLs. Finally, we found that the strained DFLs can block propagate TDD effectively. The strained DFLs on the 725-㎛-thick Si substrate can be used for the large-scale integration of GaAs on Si with less bowing and low TDD.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.204-208
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• 2011

In this paper, the design area of a fabricated solar cell has been analyzed with respect to its charge density. The mathematical calculation used for charge-density derivation was obtained from the 2001 version of a MATHCAD program. The parameter range for the calculations was ${\pm}1{\times}10^{17}cm^{-3}$, which is in the normal parameter range for n-type doping impurities ($7.0{\times}10^{17}cm^{-3}$) and also for p-type impurities ($4.0{\times}10^{17}cm^{-3}$). Therefore, it can be said that the fabricated solar-cell design area has a direct effect on charge-density changes.

• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.44-56
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• 1997

Influence of electrochemical etching conditions on capacitance gain of aluminium electrolytic on capacitor foil has been investigated by etching cubic textured high purity aluminum foil in dilute hydrochloric acid. Uniformly distributed etch pit tunnels on aluminum surface have been obtained by pretreatment aluminium foil in 10% NaOH solution for 5 minutes followed by electrochemical etching. Electrostatic capacitance of etched aluminium foil anodized to high voltage increased with the increase of current density, total charge, temperature and concentration of electrolyte up to maximum CV-value and then deceased. Election optical observation of the etched foil revealed that the density of etch of etch pits increased with the increase of current density and concentration of electrolyte. this increase of etch pit density enlarged of the increase of capacitance. However, abnormal high current density and high electrolyte concentration induced the local dissolution of the foil surface which resulted the decrease of foil capacitance.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2008-2010
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• 2001

최근에 광 디스크 기기의 고배속화에 따라서 디스크의 재생 속도는 점차로 증가하고 있다. 이러한 경향에 따라 트랙킹 제어 루프에서 나타나는 디스크의 편심에 의한 외란의 영향은 더욱 커지게 되므로 기존의 선형 제어기만으로는 디스크의 편심량이 큰 경우에 고배속에서 원하는 트랙 추종 성능을 얻을 수가 없다. 본 논문에서는 이러한 문제점을 해결하기 위해서 반복 학습 제어 알고리즘과 드라이브 시스템의 액츄에이터의 주파수 응답 특성을 이용한 새로운 트랙 추종 제어 방법을 제안한다. 또한, 제안된 트랙 추종 제어 시스템의 제어 성능을 실험을 통하여 검증하여 본다.

• Bulletin of the Korean Chemical Society
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• v.22 no.8
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• pp.827-832
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• 2001

The excitation temperature and electron number density have been measured for end-on-view ICP discharge. In this work, end-on-view ICP-AES equipped with the newly developed “optical plasma interface (OPI)” was used to eliminate or remove the neg ative effects caused by end-on-plasma source. The axial excitation temperature was measured using analyte (Fe I) emission line data obtained with end-on-view ICP-AES. The axial electron number density was calculated by Saha-Eggert ionization equilibrium theory. In the present study, the effects of forward power, nebulizer gas flow rate and the presence of Na on the excitation temperature and electron number density have been investigated. For sample introduction, two kinds of nebulizers (pneumatic and ultrasonic nebulizer) were utilized.

• Corrosion Science and Technology
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• v.11 no.5
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• pp.191-195
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• 2012

The aim of this study was to investigate effects of hafnium content on the corrosion behavior of Ti alloys in electrolyte containing chloride ion. For this study, Ti-Hf binary alloys contained 10 wt%, 20 wt% and 30 wt% Hf were manufactured in a vacuum arc-melting furnace and subjected to heat treatment for 12h at $1000^{\circ}C$ in an argon atmosphere. The pitting corrosion behavior of the specimens was examined through potentiodynamic and potentiostatic tests in 0.9 wt% NaCl electrolyte at $36.5{\pm}1^{\circ}C$. The corrosion morphology of Ti-xHf alloys was investigated using optical microscopy (OM) and X-ray diffractometer (XRD). From the optical microstructures and XRD results, needle-like martensite ($\alpha$') phases of the Ti-xHf alloys increased with an increase of Hf addition. Corrosion current density $(I_{corr})$ and current density $(I_{300mV})$ in passive region decreased, whereas, corrosion potential increased with Hf content. At the constant potential ($300mV_{SCE}$), current density decreased as time increased.