• 제목/요약/키워드: optical current sensor

검색결과 242건 처리시간 0.029초

SHM by DOFS in civil engineering: a review

  • Rodriguez, Gerardo;Casas, Joan R.;Villalba, Sergi
    • Structural Monitoring and Maintenance
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    • 제2권4호
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    • pp.357-382
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    • 2015
  • This paper provides an overview of the use of different Distributed Optical Fiber Sensor systems (DOFSs) to perform Structural Health Monitoring (SHM) in the specific case of civil engineering structures. Nowadays, there are several methods available for extracting distributed measurements from optical fiber, and their use have to be according with the aims of the SHM performance. The continuous-in-space data is the common advantage of the different DOFSs over other conventional health monitoring systems and, depending on the particular characteristics of each DOFS, a global and/or local health structural evaluation is possible with different accuracy. Firstly, the fundamentals of different DOFSs and their principal advantages and disadvantages are presented. Then, laboratory and field tests using different DOFSs systems to measure strain in structural elements and civil structures are presented and discussed. Finally, based on the current applications, conclusions and future trends of DOFSs in SHM in civil structures are proposed.

Highly-Efficient Optical Gating in Vanadium Dioxide Junction Device

  • Lee, Yong-Wook
    • 센서학회지
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    • 제20권4호
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    • pp.230-233
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    • 2011
  • In this paper, highly-efficient optical gating in a junction device based on vanadium dioxide($VO_2$) thin film grown by a sol-gel method was investigated as a gate terminal of a three-terminal device using infrared light with a wavelength of ~1554.6 nm. Due to the photoinduced phase transition, the threshold voltage of the $VO_2$ junction device, at which the device current abruptly jumps, could be tuned with a sensitivity of ~96.5 V/W by adjusting the optical power of the infrared light directly illuminating the device. Compared with the tuning efficiency of the previous device fabricated using $VO_2$ thin film deposited by a pulsed laser deposition method, the threshold voltage of this device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which is ~4.9 times larger than the previous device.

Comparative Measurement of Transverse Nuclear Magnetization of Polarized 129Xe and 131Xe by Spin-exchange Optical Pumping

  • Yu, Ye Jin;Min, Seong Ho;Moon, Han Seb
    • Current Optics and Photonics
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    • 제4권6호
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    • pp.466-471
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    • 2020
  • We analyze the transverse nuclear magnetizations of 129Xe and 131Xe in a vapor cell containing natural Xe, 87Rb, and buffer gases. Th e Xe atoms are polarized th rough spin-exch ange optical pumping (SEOP) with Rb atoms under low-magnetic-field conditions. From the free-induction-decay (FID) signal, we measure the nuclear magnetization of the Xe atoms in the Xe-Rb vapor cell. Furthermore, we measure the dependence of the gyromagnetic ratio on the magnetization of 129Xe and 131Xe by examining the amplitude of the FID signal of each isotope, and we evaluate the relationship between the magnetic field gradient and transverse relaxation rate for both of the 129Xe and 131Xe isotopes.

광분광기의 노이즈 감소를 위한 암전류에 대한 실험적 고찰 (Experimental Study on Dark Current Noise to Reduce Background Voltage Level of Optical Emission Spectroscopy)

  • 육영준;이건우;최은종;김효영;김기현
    • 반도체디스플레이기술학회지
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    • 제22권4호
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    • pp.93-98
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    • 2023
  • As semiconductor devices become highly integrated and process difficulty increases, the need for highly sensitive sensors that can detect micro leaks is increasing. However, the noise contained in the CCD sensor itself acts as an obstacle to detecting fine leaks. In this study, integration time was changed for each condition, the sensor was cooled to 0℃, and the dark voltage level was measured to confirm through experiment the characteristics of the temporal noise included in the CCD sensor, a component of OES (Optical Emission Spectroscopy). When integration time was reduced from 30msec to 10msec, the dark voltage level decreased by about 20.5 % from an average of 151.5mV to 120.5mV. In the case of cooling device, Peltier elements were selected because of their simple structure and small size. During temperature cooling, the target temperature was controlled to within ±0.5℃ through PID control. When cooled from 20℃ to 0℃ using this cooling device, it was confirmed that the dark voltage level decreased by about 7% from an average of 147.0mV to 137.0mV.

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An AFM-based Edge Profile Measuring Instrument for Diamond Cutting Tools

  • Asai, Takemi;Motoki, Takenori;Gao, Wei;Ju, Bing-Feng;Kiyono, Satoshi
    • International Journal of Precision Engineering and Manufacturing
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    • 제8권2호
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    • pp.54-58
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    • 2007
  • This paper describes an atomic force microscope (AFM)-based instrument for measuring the nanoscale cutting edge profiles of diamond cutting tools. The instrument consists of a combined AFM unit and an optical sensor to align the AFM tip with the top of the diamond cutting tool edge over a submicron range. In the optical sensor, a aser beam is emitted from a laser diode along the Y-axis and focused to a small beam spot with a diameter of approximately $10{\mu}m$ at the beam waist, which is then received by a photodiode. The top of the tool edge is first brought into the center of the beam waist by adjusting it in the X-Z-plane while monitoring the variation in the photodiode output. The cutting tool is then withdrawn and its top edge position at the beam center is recorded. The AFM tip can also be positioned at the beam center in a similar manner to align it with the top of the cutting edge. To reduce electronic noise interference on the photodiode output and thereby enhance the alignment accuracy, a technique is applied that can modulate the photodiode output to an AC signal by driving the laser diode with a sinusoidal current. Alignment experiments and edge profile measurements of a diamond cutting tool were carried out to verify the performance of the proposed system.

증감지를 이용한 방사선검출기 개발 (Development of Radiation Detector with Intensifying Screen)

  • 서정민
    • 한국방사선학회논문지
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    • 제17권6호
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    • pp.859-863
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    • 2023
  • 본 연구에서는 엑스선 증감지와 광센서, 마이크로컨트롤러(MCU)를 이용하여 휴대와 이동이 용이한 교육용 방사선검출기를 제안하였다. 광센서와 증감지로 이루어진 검출부와 마이크로컨트롤부로 간단하게 구성되어 제작이 쉽고 소형화 및 휴대형으로 적합하게 제작되었다. 검출기의 성능 확인을 위해 전압을 50에서 100 kVp까지 변경하며 검출시스템과 흡수선량계를 이용하여 방사선을 측정하였다. 관전류량은 100 mAs, SDD는 100 cm로 고정하였고 각 관전압에서 10회 반복 측정하였다. 측정값을 이용하여 검출기의 응답과 선형성을 확인하였다. 검출기와 흡수선량계의 측정결과 비교에서 높은 상관성(r:0.998, p<.001)을 보임을 확인하였다. 이러한 결과를 통하여 본 연구에서 제안된 증감지와 마이크로컨트롤러 기반의 검출기의 사용가능성을 확인할 수 있었으며, 휴대형 방사선검출시스템이 소형, 저가형, 휴대형 시스템으로 교육용으로 적용이 가능할 것으로 판단되었다.

복굴절 광섬유를 이용한 전류측정에 관한 연구 (A Study on the Current Measurement Using birefringence Fiber)

  • 장남영;최평석;은재정
    • 융합신호처리학회논문지
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    • 제6권2호
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    • pp.59-66
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    • 2005
  • 광섬유 전류 센서 특히, 단방향 편광형 광섬유 전류센서(PFOCS)에서 측정전류 정밀도는 센싱 광섬유상의 외부 환경적 변화요인 즉, 음향 진동의 변화와 전류 도체 주위에 감긴 센싱 광섬유 밴딩과 같은 내부적 변화요인에 의해 악영향을 받는다. 이와 같은 변화 요인들은 센서 헤드를 구성하는 센싱 광섬유의 복굴절 특성에 영향을 주어 결국 오전류 측정의 원인이 되고, 따라서, 단방향 PFOCS에 대한 보상 기술인 가역적 PFOCS를 이용하여, 이와 같은 복굴절 변화요인들을 억제할 수 있다. 따라서, 본 논문에서는 가역적 PFOCS의 성능해석을 위해 센싱 광섬유 상에 존재하는 외부 환경적 요인과 내부 요인으로 인한 편광도 오차와 오전류를 수치해석 하였다. 또한, 가역적 PFOCS 구조에서 일반 반사경과 faraday 회전경(FRM)의 사용으로 인한 효과 및 서로 다른 광원의 파장에 대한 효과를 비교하였다. 그 결과, 편광도 오차는 $633{\cal}nm$에서, 일반 반사경 및 FRM을 사용했을 때, 각각 $2.3\%$$0.0196\%$로 계산되었고, $1300{\cal}nm$에서 편광도 오차는 각각 $9.87\%,\;0.0196\%$로 계산되었다. 또한, 단방향 PFOCS와 비교한 오전류 수치해석 결과, 일반 반사경 및 FRM을 사용한 경우에 각각 $9.82{\times}10^{-9}A,\;1.4{\times}10^{-17}A$로 단방향 PFOCS의 경우보다 외부 환경변화 및 내부 변화요인에 강인한 센서 구조임이 확인되었다.

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피뢰기 진단을 위한 휴대용 누설전류 검출장치의 개발 (Development of a Portable Leakage Current Detecter for Arrester Diagnosis)

  • 한주섭;송재용;김일권;길경석;한문섭;장동욱
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2005년도 추계학술대회 논문집
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    • pp.783-788
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    • 2005
  • Detection of small leakage current is the most important technique in arrester diagnosis. Various types of leakage current detector have been commercialized, but they are not available for the railway arresters including voltage harmonics, and do not furnish enough information needed for arrester diagnosis. This paper describes the development of a leakage current detector which is suitable for the railway arresters. The detector is consisted of a sensor unit with amplifier, an optical linker and main analyzer. Frequency bandwidth and measuring range of the detector is 9[Hz]$\~$850[Hz] and 50[uA]$\~$5[mA], respectively.

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광섬유센서 레일패드를 이용한 레일누적통과톤수 실측장치의 효용성 분석 (An effect of rail accumulated passing tonnage measurement device which uses a optical fiber sensor rail pad)

  • 신효정;박은용;공선용;김박진
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2009년도 춘계학술대회 논문집
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    • pp.91-98
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    • 2009
  • For maintaining railroad, accumulated passing tonnage is a determinant factor of appropriate rail replacement time. Recently, Seoul Metro's rail maintaining system and technology is being improved from previous years, which increasing a standard of rail replacement. Thus, this brings importance of estimating and managing for accumulated passing tonnage. In case of light weighted train such as subway, current method of calculating accumulated passing tonnage has defaults of misrepresenting accumulated passing tonnage data. Because current method is based on the weight of passengers and train., and operation data. In addition, currently there is no mechanical and electronic system that could represent and support the accurate data between heavy and non-heavy traffic area, and accumulated passing tonnage is calculated inaccurately by estimating average value each line. The current method of calculating accumulated passing tonnage misleads to unpredictable data that represent inappropriate rail replacement period, which leads to under or over analyzed replacement period. If accumulated passing tonnage is over estimated, rail replacement leads to waste of budget. Hence, it is necessary to construct reliable actual measurement system to manage rail's life safely and efficiently, and in this study the accumulated passing tonnage measurement device is installed with using rail pad of optical fiber sensors and its effect is analyzed.

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Structural and Electrical Properties of WOx Thin Films Deposited by Direct Current Reactive Sputtering for NOx Gas Sensor

  • Yoon, Young-Soo;Kim, Tae-Song;Park, Won-Kook
    • 한국세라믹학회지
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    • 제41권2호
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    • pp.97-101
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    • 2004
  • W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{\circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t.