• 한국조명전기설비학회지:조명전기설비
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• 제10권2호
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• pp.54-62
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• 1996

본 연구에서는 광학계를 설계하고 이미지 센서를 사용하여 자외선 영역에서 근적외선(220nm~1100nm)의 광학적 특성평가를 측정시간 16ms에서 20000ms 범위에서 검지할 수 있도록 하는 시스템을 제작하고 본 시스템의 응용연구를 통해 조명산업 및 표시소자 산업의 연구개발 및 품질관리 평가에 필요한 칼라의 색좌표, 연색성, 휘도, 색차, 색순도, 반사율, 투과율 등을 측정하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.114-117
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• 1996

The wavelength selectivity in grating-assisted optical waveguide couplers is studied using a matrix method to analyse optical filter characteristics. The matrix method is extended to both 2-system modes and all guided system modes. The influence of fundamental design parameters on the performances of the optical filters by waveguide couplers is discussed.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1736-1742
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• 1989

In this thesis, to verify input-output characteristics of GaAs MESFET, light is illuminated to C-band oscillator which already designed and manufactured, thus input-output variation of GaAs MESFET is to be shown. Experimental results of two kinds of optical effects, optical tuning and opticla switching, of GaAs MESFET Oscillators are presented. For optical tuning, the Oscillation frequency decreases with optical illumination and the Oscillator power output generally increases with optical illumination, the increase being around 1 to 3 dBm at 1mW/mm\ulcornerlight intensity. While the DC-lingt illuminated Oscillator response data provide information of the optical senditivity of GaAs-MESFET Oscillators. Pulse-light illuminated transient response data can be invoked to understand the detailed optical-electrical interaction mechanisms response. Thus, it is shown that direct control of micro-devices is realisable, if we use optical effect of GaAs semiconductor compound.

• 전자공학회논문지D
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• 제35D권6호
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• pp.72-78
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• 1998

Ti:LiNbO$_3$ 광도파로위에 CPW 전극 구조를한 광변조기 내부칩을 제작한 후 일련공정에 따라 패키징 작업을 하였고 소자의 전기적특성과 광학적특성을 측정하였다. 광변조기 패키징을 위하여 페룰, 보조용 LN블럭 및 글래스, 진동 및 흡수용패드, 알루미나피더의 부분품을 사용하였으며 피그테일링, Au 와이어본딩, 에폭싱, SMA커넥팅, 실링 작업을 수행하였다. 전기적 특성에서 S/sub 21/은 -3 dB 점에서 9.8GHz의 값을, S/sub 11/은 14.4 GHz 대에서 -8.9 dB 값을 나타내었다. 광학적 특성은 제작된 광도파로가 1550nm 파장대에서 단일모드를 만족하였고, 패키지후 소자의 삽입손실은 실온에서 4.3 dB 이였으며, 소자를 온도감압챔버에 넣은후 5∼45℃까지 온도변화를 주었을 때 4.3∼6.4 dB의 삽입손실을 보였다. E-O bandwidth 응답은 3dB점에서 7.8GHz를 나타내어 10Gbps급 광통신시스템에 응용할수 있음을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.441-443
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• 1995

A new optical-resistive voltage divider, which consists of light emitting diode, optic fiber, PIN-photo diode and a high qualify shielding resistive divider, whose total response time is 7.35 [ns], has been obtained. The optical to electrical signal converter was constructed with GaAsP series light emitting diode. The response characteristics have been verified by applying the Marx impulse voltage generator experimentally. Comparing with the performance of conventional resistive voltage divider, the characteristics of the proposed optical-resistive voltage divider are more excellent in step response and less sensitive to electromagnetic interference.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1114-1115
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• 2008

In this paper, we study the optical characteristics of low iron glass for photovoltaic modules fabrication. Tow types of glasses are examined by optical transmittance and reflection measurement. Also, by making laminated glass, we analyze the difference between glass maker. Mini-PV module is fabricated to compare optical reflectance through lamination process. Anti-reflection and catalyst-coated glasses are suggested for advanced technology to obtain high electrical generation output. The specific analysis is shown in the following paper.

• 조명전기설비학회논문지
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• 제17권5호
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• pp.1-7
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• 2003

배광분포를 측정함으로써 조명기구의 모든 광학적 특성을 계산해낼 수 있으며 이를 바탕으로 조명설계를 수행할 수 있다. 이러한 일련의 측정과 해석을 위해 배광측정기의 개발시에 배광해석용 소프트웨어 개발이 동시에 이루어져야 한다 연구진이 현재 개발하고 있는 소프트웨어는 조명기구의 광학적 특성을 파악하는 데 있어, 상당히 유용한 기능들을 포함하고 있다. 또한, 조명설계에 있어 근본적인 문제 해결의 과학적 검증을 제공함은 물론, 더 나아가 조명계산에 있어 하나의 표준을 마련하는 데 기여할 수 있을 것으로 보인다.

• 조명전기설비학회논문지
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• 제29권3호
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• pp.39-44
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• 2015

Optical characteristics including the radiant flux and viewing angle of UV LEDs were investigated according to both silicone encapsulants with different refractive indexes and lens shapes. Lead frame was fabricated using the enhanced heat dissipation characteristics with a heat slug structure and the reflector based on EMC(Epoxy Mold Compound) material. Four types of lens shapes were designed and their optical characteristics depending on the refractive index of silicone encapsulants were evaluated. The maximum radiant flux can be achieved when the height of lens are 1.32mm and 1.08mm for silicone encapsulants with low and high refractive indexes, respectively. Depending on the encapsulating method, the viewing angle changes from $148.9^{\circ}$ to $130.2^{\circ}$ for low refractive index and from $145.3^{\circ}$ to $136.8^{\circ}$ for high refractive index. As a result, it is found that the optical characteristics of UV LEDs can be controled through both encapsulating method and the refractive index of encapsulants.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.487-488
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• 2005

We have investigated the Electro-Optical Characteristics for a nematic liquid crystal (NLC) alignment with rubbing alignment method on polyimide surfaces using plastic substrates. It was found that monodomain alignment of NLC is obtained with rubbing alignment method on polyimide surfaces using thin plastic substrates. EO characteristics of the TN-LCD with a rubbed PI surface based on polymer are almost the same as that of the TN-LCD with a rubbed PI surface based on glass. However, the transmittances of the TN-LCD with a rubbed PI surface based on polymer is less than that with a rubbed PI surface based on glass.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권1호
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• pp.30-34
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• 2005

This study shows the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor (DOT) using the vertical window. The measured switching voltage and current are 3.36 V and 10 ㎂, respectively. The lasing threshold current is 131 mA at 25 ℃. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is not input signal anymore in the output port. The vertical injection depleted optical thyristor - laser diode (VIDOT-LD) using the vertical-injection structure shows very good isolation between input and output signal.