• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.563-566
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• 1988

A current-controlled CMOS operational transconductance amplifier(OTA), whose transconductance is directly proportional to the DC bias current, has been developed for many electronic circuit applications. It features that its transconductance is insensitive to temperature unlike that of the bipolar OTA. This property makes it possible to use the proposed OTA as a basic buliding block in electrically variable circuit design. The SPICE simulation shows that the conversion sensitivity of the circuit is 44.62 mv /${\mu}A$ and the linearity error less than 0.54 % over a bias current range from 2 ${\mu}A$ to 120 ${\mu}A$ when the output is loaded with a 1${\Omega}$ resistor.

• ETRI Journal
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• v.35 no.2
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• pp.226-233
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• 2013

This paper presents a two-stage power-efficient class-AB operational transconductance amplifier (OTA) based on an adaptive biasing circuit suited to low-power dissipation and low-voltage operation. The OTA shows significant improvements in driving capability and power dissipation owing to the novel adaptive biasing circuit. The OTA dissipates only $0.4{\mu}W$ from a supply voltage of ${\pm}0.6V$ and exhibits excellent high driving, which results in a slew rate improvement of more than 250 times that of the conventional class-AB amplifier. The design is fabricated using $0.18-{\mu}m$ CMOS technology.

• ETRI Journal
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• v.42 no.4
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• pp.534-548
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• 2020

This study presents a new architecture for a field programmable analog array (FPAA) for use in low-frequency applications, and a generalized circuit realization method for the implementation of nth-order elliptic filters. The proposed designs of both the FPAA and elliptic filters are based on the operational transconductance amplifier (OTA) used in implementing OTA-C filters for biopotential signal processing. The proposed FPAA architecture has a flexible, expandable structure with direct connections between configurable analog blocks (CABs) that eliminates the use of switches. The generalized elliptic filter circuit realization provides a simplified, direct synthetic method for an OTA-C symmetric balanced structure for even/odd-nth-order low-pass filters (LPFs) and notch filters with minimum number of components, using grounded capacitors. The filters are mapped on the FPAA, and both architectures are validated with simulations in LTspice using 90-nm complementary metal-oxide semiconductor (CMOS) technology. Both proposed FPAA and filters generalized synthetic method achieve simple, flexible, low-power designs for implementation of biopotential signal processing systems.

• Journal of IKEEE
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• v.12 no.3
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• pp.167-171
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• 2008

A bridge resistance deviation-to-frequency (BRD-to-F) converter is presented for interfacing resistive sensor bridges. It consists of a linear operational transconductance amplifier (LOTA), a current-controlled oscillator (CCO). The prototype converter was simulated using commercially available discrete components. The result shows that the converter has a conversion sensitivity amounting to 16.90 kHz/${\Omega}$ and a linearity error less than ${\pm}$0.03 %.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.135-141
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• 1994

A linear BiCMOS operational transconductance amplifier (OTA) is described. It consists of a CMOS linear transconductor and a bipolar translineear current gain cell followed by three CMOS current mirrors. The proposed circuit has comparable linearity and temperature stability but superior dc characteristics to its bipolar counterpart. A test circuit with a transconductance of 47.3$\mu$s has been simulated. Simulation results show that a linearity error of less than $\pm$1 percent over an input volgate range from -1.0 to 1.0 V and a output dc offset current as small as-3.6 nA can be obtained.

• ETRI Journal
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• v.29 no.6
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• pp.785-793
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• 2007

In this paper, we present an integrated rail-to-rail fully differential operational transconductance amplifier (OTA) working at low-supply voltages (1.5 V) with reduced power consumption and showing high DC gain. An embedded adaptive biasing circuit makes it possible to obtain low stand-by power dissipation (lower than 0.17 mW in the rail-to-rail version), while the high DC gain (over 78 dB) is ensured by positive feedback. The circuit, fabricated in a standard CMOS integrated technology (AMS 0.35 ${\mu}m$), presents a 37 V/${\mu}s$ slew-rate for a capacitive load of 15 pF. Experimental results and high values of two quality factors, or figures of merit, show the validity of the proposed OTA, when compared with other OTA configurations.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1987.10a
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• pp.231-235
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• 1987

• Information and Communications Magazine
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• v.4 no.4
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• pp.469-483
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• 1987

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.326-333
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• 2015

This paper reports an adaptive positive feedback bias control technique for operational transconductance amplifiers to adjust the bias current based on the output current monitored by a current replica circuit. This technique enables operational transconductance amplifiers to quickly adapt their power consumption to various analog workloads when they are configured with negative feedback. To prove the concept, a test voltage follower is fabricated in $0.5-{\mu}m$ CMOS technology. Measurement result shows that the power consumption of the test voltage follower is approximately linearly proportional to the load capacitance, the signal frequency, and the signal amplitude for sinusoidal inputs as well as square pulses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.582-586
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• 2013

In this paper, a simple macro model of n-channel MOSFET with dual workfunction gate (DWFG) structure is proposed. The DWFG MOSFET has higher transconductance and lower drain conductance than conventional MOSFET. Thus analog circuit design using the DWFG MOSFET can improve circuit characteristics. Currently, device models of the DWFG MOSFET are insufficient, so simple series connected two MOSFET model is proposed. In addition, a two stage operational amplifier using the proposed DWFG MOSFET macro model is designed to verify the model.