• Title/Summary/Keyword: noise margin

Search Result 187, Processing Time 0.025 seconds

A Study on the SNR Margin Performance of Digital Subscriber Line in Complex Noises Environment (복합 잡음환경에서 디지털 가입자 회선의 SNR 마진 성능에 관한 연구)

  • 김용환;조평동;박상준;강영흥
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.27 no.9C
    • /
    • pp.829-835
    • /
    • 2002
  • DSL(digital subscriber line) transceiver designers have concerned the impulsive noise as well as NEXT(near-end crosstalk) and FEXT(far-end crosstalk) immunities Down as the strongest sources that limit the DSL channel capacity. In these noise environment the analysis on the performance of DSL should be needed. Therefore, in this paper we have estimated and simulated the SNR(signal-to-noise ratio) margin of DMT(discrete multi-tone) signal in Gauss, NEXT, FEXT and impulse noise environment by modeling an Middleton's Class A impulse signal with the test Cook pulses. As a result, it is known that the transmission rate of uplink is limited by noise characteristics rather than by loop length, but that of downlink limited complexly by both of noise characteristics and loop length. In conclusion, these results will be utilized as the threshold of ADSL performance in the complex noise environment including impulse noise.

A low voltage SRAM using double boosting scheme (이중 부스팅 회로를 이용한 저전압 SRAM)

  • Jung, Sang-Hoon;Eom, Yoon-Joo;Chung, Yeon-Bae
    • Proceedings of the IEEK Conference
    • /
    • 2005.11a
    • /
    • pp.647-650
    • /
    • 2005
  • In this paper, a low voltage SRAM using double boosting scheme is described. A low supply voltage deteriorates the static noise margin (SNM) and the cell read-out current. For read/write operation, a selected word line and cell VDD bias are boosted in a different level using double boosting scheme. This increases not only the static noise margin but also the cell readout current at a low supply voltage. A low voltage SRAM with 32K ${\times}$ 8bit implemented in a 0.18um CMOS technology shows an access time of 26.1ns at 0.8V supply voltage.

  • PDF

2-axis deck mechanism for gap servo NFR system (근접장 시스템의 2 축 deck mechanism)

  • Jeong, Mi-Hyeon;Park, Hong-Soo;Lee, Seong-Hun;Seo, Jeong-Kyo;Choi, In-Ho;Min, Byung-Hoon
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
    • /
    • 2007.11a
    • /
    • pp.1031-1032
    • /
    • 2007
  • Gap servo NF (Near Field) system is one of technologies to reduce beam spot size by increasing NA (Numerical Aperture) of lens. To achieve higher NA, SIL (Solid Immersion Lens) is used. In the case of using a blue LD (405 nm) as the light source the gap distance should be controlled under 100 nm with much tighter margin. Because of very small gap distance between SIL bottom and the surface of media, relative tilt tolerance is limited. In this paper, we presented 2-axis tilt mechanism for skew adjustment within small tilt margin.

  • PDF

Design of ALGaAs/GaAs HBT CML Logic Circuit (ALGaAs/GaAs HBT CML 논리 회로 설계)

  • 최병하;김학선;김은로;이형재
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.17 no.5
    • /
    • pp.509-520
    • /
    • 1992
  • AIGaAs /GaAs HBT OR /NOR gate. which can be used for high speed digital system was designed. Equivalent circuit parameters of HBT were obtained from Gummel-Poon's model and direct extraction method. Simulation results with PSPI CE showed that propagation delay time and cutoff toggle frequency of designed gate were 25ps and 200Hz, respectively. the designed gate exhibited superior properties to the recently reported HBT ECL and MESFET SCFL when considering the fan-out characteristics and noise margin.

  • PDF

An Experimental 0.8 V 256-kbit SRAM Macro with Boosted Cell Array Scheme

  • Chung, Yeon-Bae;Shim, Sang-Won
    • ETRI Journal
    • /
    • v.29 no.4
    • /
    • pp.457-462
    • /
    • 2007
  • This work presents a low-voltage static random access memory (SRAM) technique based on a dual-boosted cell array. For each read/write cycle, the wordline and cell power node of selected SRAM cells are boosted into two different voltage levels. This technique enhances the read static noise margin to a sufficient level without an increase in cell size. It also improves the SRAM circuit speed due to an increase in the cell read-out current. A 0.18 ${\mu}m$ CMOS 256-kbit SRAM macro is fabricated with the proposed technique, which demonstrates 0.8 V operation with 50 MHz while consuming 65 ${\mu}W$/MHz. It also demonstrates an 87% bit error rate reduction while operating with a 43% higher clock frequency compared with that of conventional SRAM.

  • PDF

Application Case of ISO 22266-1 for Establishing the Torsional Vibration Criteria of a Nuclear Turbine Generator (원전 터빈 발전기 비틀림 진동기준 국제표준규격(ISO 22266-1) 적용 사례)

  • Chung, Hyuk-Jin;Song, Woo-Sok;Lee, Hyuk-Soon
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
    • /
    • 2010.05a
    • /
    • pp.225-226
    • /
    • 2010
  • ISO 22266-1 issued in May 2009 provides guidelines for applying shaft torsional vibration criteria, under normal operating conditions, for the coupled shaft system and long blades of a turbine generator set. In case that a turbine generator vendor do not meet the separation margin of torsional natural frequencies in the technical specifications of the purchaser, this standard can present the reasonable and objective criteria about torsional vibration which both purchaser and supplier can agree on, while ensuring the integrity of turbine generator. This paper describes the application case of ISO 22266-1 for the establishment of torsinal vibration criteria under retrofitting the turbine generator of 'U' nuclear power plant.

  • PDF

The Depression of High Frequency Vibration of the Ultra-Slim-Height Optical Pick-up Actuator Using the Re-Design of Modal Parameters (모달파라미터 재설계를 통한 초슬림형 광픽업 액추에이터의 고주파 진동저감)

  • 송병륜;조원익;강형주;이영빈;성평용;박영필
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
    • /
    • 2003.05a
    • /
    • pp.770-774
    • /
    • 2003
  • We propose the re-design method of modal parameters to depress the 2nd resonance peak of the ultra-slim-height optical pick-up actuator. With the addition of tile counter mode near the 2nd resonance frequency, we can achieve the gain margin which is sufficient to meet the system requirement. It would alleviate the burden of the additional filter for a high-speed drive.

  • PDF

Sense Amplifier Design for A NOR Type Non-Volatile Memory

  • Yang, Yil-Suk;Yu, Byoung-Gon;Roh, Tae-Moon;Koo, Jin-Gun;Kim, Jongdae
    • Proceedings of the IEEK Conference
    • /
    • 2002.07c
    • /
    • pp.1555-1557
    • /
    • 2002
  • We have investigated the precharge type sense amplifier, it is suitable fur voltage sensing in a NOR type single transistor ferroelectric field effect transistor (1T FeFET) memory read operation. The proposed precharge type sense amplifier senses the bit line voltage of 1T FeFET memory. Therefore, the reference celt is not necessary compared to current sensing in 1T FeFET memory, The high noise margin is wider than the low noise margin in the first inverter because requires tile output of precharge type sense amplifier high sensitivity to transition of input signal. The precharge type sense amplifier has very simple structure and can sense the bit line signal of the 1T FeFET memory cell at low voltage.

  • PDF

A Technique to Circumvent V-shaped Deconvolution Error for Time-dependent SRAM Margin Analyses

  • Somha, Worawit;Yamauchi, Hiroyuki;Yuyu, Ma
    • IEIE Transactions on Smart Processing and Computing
    • /
    • v.2 no.4
    • /
    • pp.216-225
    • /
    • 2013
  • This paper discusses the issues regarding an abnormal V-shaped error confronting algebraic-based deconvolution process. Deconvolution was applied to an analysis of the effects of the Random Telegraph Noise (RTN) and Random Dopant Fluctuation (RDF) on the overall SRAM margin variations. This paper proposes a technique to suppress the problematic phenomena in the algebraic-based RDF/RTN deconvolution process. The proposed technique can reduce its relative errors by $10^{10}$ to $10^{16}$ fold, which is a sufficient reduction for avoiding the abnormal ringing errors in the RTN deconvolution process. The proposed algebraic-based analyses allowed the following: (1) detection of the truncating point of the TD-MV distributions by the screening test, and (2) predicting the MV-shift-amount by the assisted circuit schemes needed to avoid the out of specs after shipment.

  • PDF

Running Bucket Vibration Test of Steam Turbines (증기 터빈 버켓의 회전 진동 시험)

  • 박종포;신언탁;김호종
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
    • /
    • 1997.10a
    • /
    • pp.96-100
    • /
    • 1997
  • A design modification was made on the 9-th stage wheel dovetail of a high-intermodiate pressure (HIP) turbine rotor for a fossil power plant that necessitates the use of new long-shank buckets for the row. A bucket vibration test is necessary to verify that the new 9-th stage buckets have adequate frequency margin from a nozzle passing frequency when running at speed. A finite element analysis (FEA) has been performed using a commercial S/W to approximately estimate bucket natural frequencies, and thus to help the vibration test. A row of the new buckets has been assembled on the HIP rotor for the vibration tests using dynamic balancing facilities. The tests have been done during deceleration run with air excitation. The test results are compared with the calculation using our empirical formula, and show that the modified design meets the frequency-margin requirements.

  • PDF