• Title/Summary/Keyword: no current stress

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Study on Soft-Switching Transformers Inductor Boost Converter for Fuel Cell Powered Railway Vehicle

  • Jung, No-Geon;Kim, Jae-Moon
    • Journal of Electrical Engineering and Technology
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    • v.13 no.6
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    • pp.2553-2560
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    • 2018
  • In Korea, there are no instances where a hydrogen fuel cell power generation system has been used in a railway vehicle. Only the basic topology has been studied. In the previous study, conventional converters using a single switch were applied to the fuel cell power generation system. Therefore, current stress on the switch at converter on-off transitions would be large when controlling a large-capacity railway vehicle. In addition, since the input side ripple is also large, there is a problem with a shortening of the lifetime of both the fuel cell power generation system and the inductor. In this paper, a soft-switching transformer inductor boost converter for fuel cell powered railway vehicles was proposed. A technique to reduce both the switching current stress generated during on-off transitions, and the input ripple current flowing in the inductor were studied. The soft-switching TIB converter uses a transformer-type inductor to configure the entire circuit in an interleaved method, and reduces both input current ripple and the current ripple of the inductor and switch.

Floating Voltage Stacked LED Driver for Low Voltage Stress and Multi-channel Current Balancing (저 전압스트레스 및 다채널 전류 평형을 위한 Floating 전압 스택형 단일스위치 LED 구동회로)

  • Hwang, Won-Sun;Hwang, Sang-Soo;Kang, Jeong-Il;Han, Sang-Kyoo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.20 no.2
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    • pp.122-129
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    • 2015
  • In this study, we propose a low voltage stress and cost-effective light emitting diode (LED) driver capable of multi-channel current balancing. Conventional LED drivers require as many boost converters as the number of LED channels, whereas the proposed LED driver requires only one buck converter and several balancing capacitors instead of several expensive boost converters. Additionally, while the components of the boost converter have high voltage stress and depend on the LED driving voltage, components of the proposed driver have about one-half of the voltage stress across all components. The proposed driver exhibits high reliability and cost effectiveness because it only uses few DC blocking capacitors with no additional active devices to balance the current of multi-channel LEDs. The proposed driver exhibits high reliability and cost effectiveness. The validity of the proposed driver is confirmed through a theoretical analysis. An explanation of the design considerations and experimental results were obtained using a prototype applicable to a 46" LED-TV.

A Novel Soft Switching PWM·PFC AC·DC Boost Converter

  • Sahin, Yakup
    • Journal of Electrical Engineering and Technology
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    • v.13 no.1
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    • pp.256-262
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    • 2018
  • This study introduces a novel Soft Switching (SS) Pulse Width Modulated (PWM) AC-DC boost converter. In the proposed converter, the main switch is turned on with Zero Voltage Transition (ZVT) and turned off with Zero Current Transition (ZCT). The main diode is turned on with Zero Voltage Switching (ZVS) and turned off with Zero Current Switching (ZCS). The auxiliary switch is turned on and off with ZCS. All auxiliary semiconductor devices are turned on and off with SS. There is no extra current or voltage stress on the main semiconductor devices. The majority of switching energies are transferred to the output by auxiliary transformer. Thus, the current stress of auxiliary switch is significantly reduced. Besides, the proposed converter has simple structure and ease of control due to common ground. The theoretical analysis of the proposed converter is verified by a prototype with 100 kHz switching frequency and 500 W output power. Furthermore, the efficiency of the proposed converter is 98.9% at nominal output power.

The Shear Stiffness of Small Strain with Time Effect (미소변형 전단강성에 시간효과가 미치는 영향)

  • 김수삼;신현영;김병일
    • Proceedings of the KSR Conference
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    • 2001.05a
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    • pp.249-256
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    • 2001
  • This study investigated the shear stiffness of level of small strain with time effect. Time effect consists of rest time, loading rate of recent and current stress path. In addition, for the measurement of small strain, overconsolidated state was represented in a triaxial cell, and drained stress path tests were carried out. Test results show that the loading rate of recent stress path has no effects on the stiffness of very small strain, but the shear stiffness of level of small strain increases with it. Finally, the rest time and the loading rate of current stress path have the effects on the shear stiffness of initial and small strain.

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Temperature dependance of Leakage Current of Nitrided, Reoxided MOS devices (질화, 재산화시진 모스 절연막의 온도 변화에 따른 누설전류의 변화)

  • 이정석;장창덕;이용재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.71-74
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    • 1998
  • In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

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Tree of life: endothelial cell in norm and disease, the good guy is a partner in crime!

  • Basheer Abdullah Marzoog
    • Anatomy and Cell Biology
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    • v.56 no.2
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    • pp.166-178
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    • 2023
  • Undeniably, endothelial cells (EC) contribute to the maintenance of the homeostasis of the organism through modulating cellular physiology, including signaling pathways, through the release of highly active molecules as well as the response to a myriad of extrinsic and intrinsic signaling factors. Review the data from the current literature on the EC role in norm and disease. Endothelium maintains a precise balance between the released molecules, where EC dysfunction arises when the endothelium actions shift toward vasoconstriction, the proinflammatory, prothrombic properties after the alteration of nitric oxide (NO) production and oxidative stress. The functions of the EC are regulated by the negative/positive feedback from the organism, through EC surface receptors, and the crosstalk between NO, adrenergic receptors, and oxidative stress. More than a hundred substances can interact with EC. The EC dysfunction is a hallmark in the emergence and progression of vascular-related pathologies. The paper concisely reviews recent advances in EC (patho) physiology. Grasping EC physiology is crucial to gauge their potential clinical utility and optimize the current therapies as well as to establish novel nanotherapeutic molecular targets include; endothelial receptors, cell adhesion molecules, integrins, signaling pathways, enzymes; peptidases.

Implementation of a ZVS Three-Level Converter with Series-Connected Transformers

  • Lin, Bor-Ren
    • Journal of Power Electronics
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    • v.13 no.2
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    • pp.177-185
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    • 2013
  • This paper studies a soft switching DC/DC converter to achieve zero voltage switching (ZVS) for all switches under a wide range of load condition and input voltage. Two three-level PWM circuits with the same power switches are adopted to reduce the voltage stress of MOSFETs at $V_{in}/2$ and achieve load current sharing. Thus, the current stress and power rating of power semiconductors at the secondary side are reduced. The series-connected transformers are adopted in each three-level circuit. Each transformer can be operated as an inductor to smooth the output current or a transformer to achieve the electric isolation and power transfer from the input side to the output side. Therefore, no output inductor is needed at the secondary side. Two center-tapped rectifiers connected in parallel are used at the secondary side to achieve load current sharing. Due to the resonant behavior by the resonant inductance and resonant capacitance at the transition interval, all switches are turned on at ZVS. Experiments based on a 1kW prototype are provided to verify the performance of proposed converter.

Accelerated Stress Testing of a-Si:H Pixel Circuits for AMOLED Displays

  • Sakariya, Kapil;Sultana, Afrin;Ng, Clement K.M.;Nathan, Arokia
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.749-752
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    • 2004
  • Unlike OLEDs, there is no lifetime testing procedure for TFTs. In this work, we have defined such a procedure and developed a method for the accelerated stress testing of TFT pixel circuits in a-Si AMOLED displays. The acceleration factors derived are based on high current and temperature stress, and can be used to significantly reduce the testing time required to guarantee a 20000-hour display backplane lifespan.

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Effect of Experimental Electrization Stress on the Pathogenesis of Escherichia coli in Mice (실험적 감전 Stress 가 Escherichia coli 감염마우스의 기병에 미치는 영향)

  • Lee, Bang Whan
    • Korean Journal of Veterinary Research
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    • v.13 no.2
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    • pp.119-129
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    • 1973
  • A hypothesis that is a stress condition in animal may cause either enhancement or reduction of the host resistance against microbial infection was experimentally studied. Among of many processes for stress formation an experimental electrization in mice was devised, on the bases of blood picture analysis, and studied the effect of experimental electrization of mice on E. coll infection. The results obtained were as follows. 1. Electrization with ordinary current, A. C. 60 cps., on the path of symmetrical line of both posterior limbs at 20 to 100 volts (less than 10 mA) for 15 to 30 seconds was able to induce a stress reaction in blood pattern without showing any dangers of electrocution, electric burns and other residual signs, and no correlation between blood pattern of the reaction and an amount of current between 20 to 100 volts was observed. As the electrodes, two of 21 gauge hypodermic needles were used, when the electrization each of them were inserted into the center of toe tissue of the both legs. 2. Serum protein fractions following the experimental electrization showed a tendency of a low A/G ratio and a high value of ${\alpha}$-globulin. 3. In the studies on the effect of electrical stress on the pathogenesis of E. coli in mice, a group in which a simultaneous electrization and infection, and a group infected two hours after electrization showed 80 per cent mortality. On the other hand, infection after 20 hours electrization and control groups showed their mortality of 40 and 60 per cent respectively.

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Electrical Stress in High Permittivity TiO2 Gate Dielectric MOSFETs

  • Kim, Hyeon-Seag;S. A. Campbell;D. C. Gilmer
    • Electrical & Electronic Materials
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    • v.11 no.10
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    • pp.94-99
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    • 1998
  • Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

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