• 산업기술연구
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• 제32권A호
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• pp.95-102
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• 2012

To advance luminance efficiency of Titania at visible range, N-doped $TiO_2$ was prepared by using ammonium hydroxide as a source of nitrogen. The photoactivities of the synthesized $TiO_2$ were evaluated on the basis of degradation of humic acid in aqueous solutions with different light sources, UV-C, UV-A and fluorescent lamp. As a result, at UV-C is high efficiency $UV_{254}$ decrease and TOC removal. In this study, the best synthetic conditions of N-doped $TiO_2$ were 5.0 M of ammonium hydroxide concentration and calcination temperature of $550^{\circ}C$. The degradation rate of humic acid as an evaluation of photoactivities of the catalysts were conducted with pH variation, decrease rate of molecular absorption, removal rate of total organic carbon and fluorescece evolution for humic acid solution. XRD and SEM were applied for analysis of surface analysis of the catalysts.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.114-114
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• 2009

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.111.1-111.1
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• 2009

• Advances in nano research
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• 제2권4호
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• pp.179-186
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• 2014

Indium-nitrogen co-doped zinc oxide thin films (INZO) were prepared on glass substrates in the atmosphere by ultrasonic spray pyrolysis. The aqueous solution of zinc acetate, ammonium acetate and different indium sources: indium (III) chloride and indium (III) nitrate were used as the precursors. After film deposition, different anneal temperature treatment as 350, 450, $550^{\circ}C$ were applied. Electrical properties as concentration and mobility were characterized by Hall measurement. The surface morphology and crystalline quality were characterized by SEM and XRD. With the activation energy analysis for both films, the concentration variation of the films at different heat treatment temperature was realized. Donors correspond to zinc related states dominate the conduction mechanism for these INZO films after $550^{\circ}C$ high temperature heat treatment process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.302-303
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• 2006

The response surface modeling of the pretilt angle control using ion-beam (IB) alignment on nitrogen doped diamond-like carbon (NDLC) thin film layer is investigated. The response surface model is used to analyze the variation of the pretilt angle under various process conditions IB exposure angle and IB exposure time are considered as Input factors. The analysis of variance technique is used to analyze the statistical significance, and effect plots are also investigated to examine the relationships betweenthe process parameters and the response. The model can allow us to reliably predict the pretilt angle with respect to the varying process conditions.

• Composites Research
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• 제31권5호
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• pp.267-275
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• 2018

A facile method for the preparation of nitrogen-doped microporous carbon via the pyrolysis of poly(vinylidene fluoride) (PVDF) using polypyrrole (PPy) as a selective nitrogen source was developed. A PVDF/PPy-800 sample (carbonized at $800^{\circ}C$) with a 1:0.5 ratio of PVDF and PPy exhibited the highest micropore volume. The activated microporous carbon materials obtained from PVDF/PPy-800 prepared at $800^{\circ}C$ with KOH possessed a large specific surface area and narrow pore-size distribution. They were characterized using $N_2$ adsorption at 77 K and argon (Ar) adsorption at 87 K, which allowed for the characterization of the narrow microporosity of the prepared materials due to the absence of interactions between Ar and the sample surface. In addition, the activated microporous carbon material with a KOH/carbon ratio of 2:1 was found to exhibit the largest specific surface area ($1296m^2g^{-1}$ in $N_2$ at 77 K) and microporosity, and a high specific capacitance ($122.8F\;g^{-1}$).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.180.2-180.2
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• 2014

Opening a bandgap by forming graphene nanoribbons (GNRs) and tailoring their properties via doping is a promising direction to achieve graphene-based advanced electronic devices. Applying a first-principles computational approach combining density functional theory (DFT) and DFT-based non-equilibrium Green's function (NEGF) calculation, we herein study the structural, electronic, and charge transport properties of boron-nitrogen binary edge doped GNRs and show that it can achieve novel doping effects that are absent for the single B or N doping. For the armchair GNRs, we find that the B-N edge co-doping almost perfectly recovers the conductance of pristine GNRs. For the zigzag GNRs, it is found to support spatially and energetically spin-polarized currents in the absence of magnetic electrodes or external gate fields: The spin-up (spin-down) currents along the B-N undoped edge and in the valence (conduction) band edge region. This may lead to a novel scheme of graphene band engineering and benefit the design of graphene-based spintronic devices.

• 한국재료학회지
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• 제24권3호
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• pp.140-144
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• 2014

The contact mechanism of devices is usually researched at electrode contacts. However, the contact between a dielectric and channel at the MOS structure is more important. The graphene was used as a channel material, and the thin film transistor with MOS structure was prepared to observe the contact mechanism. The graphene was obtained on Cu foil by the thermal decomposition method with $H_2$ and $CH_4$ mixed gases at an ambient annealing temperature of $1000^{\circ}C$ during the deposition for 30 min, and was then transferred onto a $SiO_2/Si$ substrate. The graphene was doped in a nitrogen acidic solution. The chemical properties of graphene were investigated to research the effect of nitric atoms doping. The sheet resistance of graphene decreased after nitrogen acidic doping, and the sheet resistance decreased with an increase in the doping times because of the increment of negative charge carriers. The nitric-atom-doped graphene showed the Ohmic contact at the curve of the drain current and drain voltage, in spite of the Schottky contact of grapnene without doping.

• Transactions on Electrical and Electronic Materials
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• 제9권3호
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• pp.101-104
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• 2008

The electrical properties and microstructure of nitrogen-doped poly 3C-SiC films were studied according to different thickness. Poly 3C-SiC films were deposited by LPCVD(low pressure chemical vapor deposition) at $900^{\circ}C$ and 4 Torr using $SiH_2Cl_2$ (100 %, 35 sccm) and $C_2H_2$ (5 % in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5 % in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the 3C-SiC films with $1,530{\AA}$ of thickness was $32.7{\Omega}-cm$ and decreased to $0.0129{\Omega}-cm$ at $16,963{\AA}$. In XRD spectra, 3C-SiC is so highly oriented along the (1 1 1) plane at $2{\theta}=35.7^{\circ}$ that other peaks corresponding to SiC orientations are not presented. The measurement of resistance variations according to different thickness were carried out in the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of resistance variation decreases with increasing the films thickness, the linearity of resistance variation improved.

• Journal of Electrochemical Science and Technology
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• 제10권2호
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• pp.159-169
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• 2019

The activated carbon materials were prepared from waste biomass by ultrasonic assisted chemical activation method (UCA), ultrasonic assisted physical activation method (UPA) and Manganese nitrogen doped carbon (Mn/N-C). The XRD result shows the turbostatic (fully disordered) structure. The cyclic voltammetry test was done at 50 mV/s using 1M sodium sulfate and the values of specific capacitance were found to be 93, 100 and 115 F/g for UCA, UPA and Mn/N-C respectively. The power density values for the samples UCA, UPA and Mn/N-C were found to be 46.04, 87.97 and 131.42 W/kg respectively. The electrochemical impedance spectroscopy was done at low frequency between 1 to 10 kHz. The Nyquist plot gives the resistant characteristics of the materials due to diffusional resistance at the electrode-electrolyte interface. The Energy Dispersive X-Ray Spectroscopyanalysis (EDAX) analysis showed that the percentage doping of nitrogen and manganese were 3.53 wt% and 9.44 wt% respectively. It is observed from the experiment Mn/N-C doped carbon show good physical and electrochemical properties.