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http://dx.doi.org/10.12989/anr.2014.2.4.179

Effects of post anneal for the INZO films prepared by ultrasonic spray pyrolysis  

Lan, Wen-How (Department of Electrical Engineering, National University of Kaohsiung)
Li, Yue-Lin (Department of Electrical Engineering, National University of Kaohsiung)
Chung, Yu-Chieh (Department of Electrical Engineering, National University of Kaohsiung)
Yu, Cheng-Chang (Department of Electrophysics, National Chiao Tung University)
Chou, Yi-Chun (Department of Electrical Engineering, National University of Kaohsiung)
Wu, Yi-Da (Department of Electrical Engineering, National University of Kaohsiung)
Huang, Kai-Feng (Department of Electrophysics, National Chiao Tung University)
Chen, Lung-Chien (Department of Electro-optical Engineering, National Taipei University of Technology)
Publication Information
Advances in nano research / v.2, no.4, 2014 , pp. 179-186 More about this Journal
Abstract
Indium-nitrogen co-doped zinc oxide thin films (INZO) were prepared on glass substrates in the atmosphere by ultrasonic spray pyrolysis. The aqueous solution of zinc acetate, ammonium acetate and different indium sources: indium (III) chloride and indium (III) nitrate were used as the precursors. After film deposition, different anneal temperature treatment as 350, 450, $550^{\circ}C$ were applied. Electrical properties as concentration and mobility were characterized by Hall measurement. The surface morphology and crystalline quality were characterized by SEM and XRD. With the activation energy analysis for both films, the concentration variation of the films at different heat treatment temperature was realized. Donors correspond to zinc related states dominate the conduction mechanism for these INZO films after $550^{\circ}C$ high temperature heat treatment process.
Keywords
indium-nitrogen co-doped zinc oxide; anneal; resistivity;
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