• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.254-259
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• 2003

In the fabrication process of transparent conducting thin films of the ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the $SiO_2$ buffer layer formed on the substrate and $N_2$ annealing treatment were investigated by XPS (X-ray photoelectron spectroscopy) analysis. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin films which were deposited on $SiO_2$ buffer layer/soda lime glass and then annealed under nitrogen atmosphere were 84 % and $5.0\times 10^{-3}\Omega \textrm{cm}$ respectively. The XPS analysis confirmed that a $SiO_2$ buffer layer inhibited Na ion diffusion from the substrate, resulting in prohibiting the formation of a secondary phase such as $Na_2SnO_3$ and SnO and increasing Sb ion concentration and ratio of $Sb^{5+}/Sb^{3+}$ in the film. And it was also found that $N_2$ annealing treatment leads to the reduction of $Sn^{4+}$as well as $Sb^{5+}$ however the reduction of $Sn^{4+}$ is more effective and therefore consequently results in decrease in the electrical resistivity to produce an excellent electrical properties of the film.

• Clean Technology
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• v.26 no.1
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• pp.7-12
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• 2020

Ti-SBA-15 catalysts doped with lanthanide ions (Ln/Ti-SBA-15) were successfully synthesized using conventional hydrothermal method. In addition, they were characterized by XRD, FT-IR, DRS, BET, and PL. The activity of these materials on the photocatalytic decomposition of methylene blue under ultraviolet light irradiation was also examined. Ti-SBA-15 catalysts doped with various lanthanide ions maintained their mesoporous structure. The pore size and pore volume of Ln/Ti-SBA-15 materials decreased but their surface area increased upon the doping of lanthanide ion. Ln/Ti-SBA-15 materials exhibited the type IV nitrogen isotherm with desorption hysteresis loop type H2, which was characteristic of mesoporous materials. The size of hysteresis increased in the doping of lanthanide ions on Ti-SBA-15 material. There was no absorption in the visible region (> 400 nm) regardless of the doping of lanthanide ions to TiO₂ particles, while the broad bands at 220 nm appeared at the Ln/Ti-SBA-15 samples, indicating the framework incorporation of titanium into SBA-15. 1 mol% Pr/ Ti-SBA-15 catalysts showed the highest photocatalytic activity on the decomposition of methylene blue but the Ti-SBA-15 catalysts doped with Eu, Er, and Nd ions showed lower activity compared to pure Ti-SBA-15 catalyst. The PL peaks appeared at about 410 nm at all catalysts while the excitonic PL signal was proportional to the photocatalytic activity for the decomposition of methylene blue.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.157-158
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• 2002

A surface hardenable low alloy carbon steel was implanted with medium energy (20 - 50KeV) $N_2^+$ ions to produced a modified hardened surface. The implantation conditions were varied and are given in several doses. The surface hardness of treated and untreated steels were measured using depth sensing ultra micro indentation system (UMIS). It is shown that the hardness of nitrogen ion implanted steels varied from 20 to 50GPa depending on the implantation conditions and the doses of implantation. The structure of the modified surfaces was examined by X-ray photoelectron spectroscopy (XPS). It was found that the high hardness on the implanted surfaces was as a result of formation of non-equilibrium nitrides. High-resolution XPS studies indicated that the nitride formers were essentially C and Si from the alloy steel. The result suggests that the ion implantation provided the conditions for a preferential formation of C and Si nitrides. The combination of evidences from nano-indentation and XPS, provided a strong evidence for the existence of $sp^3$ type of bonding in a suspected $(C,Si)_xN_y$ stoichiometry. The formation of ultra hard surface from relatively cheap low alloy steel has significant implication for wear resistance implanted low alloy steels.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.246-249
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• 2013

Graphene was obtained on Cu foil by thermal decomposition method. A gas mixture of $H_2$ and $CH_4$ and an ambient annealing temperature of $1,000^{\circ}C$ were used during the deposition for 30 Min., and for the transfer onto $SiO_2/Si$ and Si substrates. The physical properties of graphene were investigated with regard to the effect ofnitrogen atom doping and the various substrates used. The G/2D ratio decreased when the graphene became monolayer graphene. The graphene grown on $SiO_2/Si$ substrate showed a low intensity of the G/2D ratio, because the polarity of the $SiO_2$ layer improved the quality of graphene. The intensity of the G/2D ratio of graphene doped with nitrogen atoms increased with the doping time. The quality of graphene depended on the concentration of the nitrogen doping and chemical properties of substrates. High-quality monolayer graphene was obtained with a low G/2D ratio. The increase in the intensity of the G/2D ratios corresponded to a blue shift in the 2D peaks.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.4
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• pp.288-294
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• 2013

This gas analysis data come from the hydrogen which is produced by proton exchange membrane. Main impurities of hydrogen are methane, oxygen, nitrogen, carbon monoxide, and carbon dioxide. The concentration of impurities is ranged between 0.0191 to $315{\mu}mol/mol$ for each impurity. Methane contamination is believed from the electrode reaction between carbon doped electrode and produced hydrogen. Nitrogen contamination should take place the sampling process error, not from PEM hydrogen Production system.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.6
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• pp.817-820
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• 2012

We studied p-type capacitance characteristics of ZnO thin-film transistors (TFT's), grown by metal organic chemical vapor deposition (MOCVD). We compared two ZnO TFT's: one grown at $450^{\circ}C$ and the other grown at $350^{\circ}C$. ZnO grown at $450^{\circ}C$ showed smooth capacitance profile with electron density of $1.5{\times}10^{20}cm^{-3}$. In contrast, ZnO grown at $350^{\circ}C$ showed a capacitance jump when gate voltage was changed to negative voltages. Current-voltage characteristics measured in the two samples did not show much difference. We explain that the capacitance jump is related to p-type ZnO layer formed at the $SiO_2$ interface. Current-voltage and capacitance-voltage data support that p-type characteristics are observed only when background electron density is very low.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.174-175
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• 2007

A programmable metallization cell (PMC) memory structure with copper-saturated GeTe solid electrolyte films doped by nitrogen was prepared on a TiW bottom electrode by a co-sputtering technique at room temperature. The $Ge_{45}Te_{55}$ solid electrolyte films deposited with various $N_2$/Ar flow ratios showed an increase of crystallization temperature and especially, the electrolyte films deposited at $N_2$/Ar ratios above 30% showed a crystallization temperature above $400^{\circ}C$, resulting in surviving in a back-end process in semiconductor memory devices. The device with a 200 nm thick $Cu_{1-x}(Ge_{45}Te_{55})_x$ electrolyte switches at 1 V from an "off " state resistance, $R_{off}$, close to $10^5$ to an "on" resistance state, Ron, more than 20rders of magnitude lower for this programming current.

• Journal of Korean Society of Environmental Engineers
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• v.31 no.11
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• pp.1019-1024
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• 2009

Visible-light-active $TiO_2-_xN_x$ nanoparticles with a homogeneous anatase crystalline structure were successfully prepared through a hydrolysis of $TiCl_4$ with ammonia solution. The samples were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), $N_2$-sorption, and UV-vis diffuse reflectance spectra (DRS) techniques. The light absorption onset shifted from 390 nm on pure $TiO_2$ to the visible region at 530 nm on nitrogen-doped $TiO_2$. A clear decrease in the band gap was deduced from the DRS results. The photocatalytic activity was evaluated from the photodegradation of congo red solution under visible light irradiation. The photocatalyst showed the highest photocatalytic activity at an optimal value of nitrogen doping concentration. This was suggested that the nitrogen doping should have an important effects on the improvement of photocatalytic activity.

• Journal of Electrochemical Science and Technology
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• v.12 no.1
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• pp.137-145
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• 2021

Among the non-precious metal catalysts, iron-nitrogen doped carbon (Fe-N/C) catalysts have been recognized as the most promising candidates for an alternative to Pt-based catalysts for the oxygen reduction reaction (ORR) under alkaline and acidic conditions. In this study, the nano replication method using mesoporous silica, which features tunable primary particle sizes and shape, is employed to prepare the mesoporous Fe-N/C catalysts with different shapes. Platelet SBA-15, irregular KIT-6, and spherical silica particle (SSP) were selected as a template to generate three different kinds of shapes of the mesoporous Fe-N/C catalyst. Physicochemical properties of mesoporous Fe-N/C catalysts are characterized by using small-angle X-ray diffraction, nitrogen adsorption-desorption isotherms, and scanning electron microscopy images. According to the electrochemical evaluation, there is no morphological preference of mesoporous Fe-N/C catalysts toward the ORR activity with half-cell configuration under alkaline electrolyte. By implementing X-ray photoelectron spectroscopy analysis of Fe and N atoms in the mesoporous Fe-N/C catalysts, it is possible to verify that the activity towards ORR highly depends on the portions of "Fe-N" species in the catalysts regardless of the shape of catalysts. It was suggested that active site distribution in the Fe-N/C is one important factor towards ORR activity.

• Journal of Sensor Science and Technology
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• v.32 no.3
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• pp.169-173
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• 2023

With the increasing concern of global warming caused by greenhouse gases owing to the recent industrial development, there is a growing need for advanced technology to control these emissions. Among the various greenhouse gases, nitrogen dioxide (NO₂) is a major contributor to global warming and is mainly released from sources, such as automobile exhaust and factories. Although semiconductor-type NO₂ gas sensors, such as SnO₂, have been extensively studied, they often require high operating temperatures and complicated manufacturing processes, while lacking selectivity, resulting in inaccurate measurements of NO₂ gas levels. To address these limitations, a novel sensor using PbS quantum dots (QDs) was developed, which operates at low temperatures and exhibits high selectivity toward NO₂ gas owing to its strong oxidation reaction. Furthermore, the use of P3HT conductive polymer improved the thin film quality, reactivity, and reaction rate of the sensor. The sensor demonstrated the ability to accurately measure NO₂ gas concentrations ranging from 500 to 100 ppm, with a 5.1 times higher sensitivity, 1.5 times higher response rate, and 1.15 times higher recovery rate compared with sensors without P3HT.