• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.46-50
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• 2007

We have studied the nematic liquid crystal (NLC) alignment effects on a nitrogen-doped diamond-like carbon (NDLC) thin film layer with ion beam irradiation. The pretilt angle for NLC on the NDLC surface with ion beam exposure was observed below 1 degree. Also, we had the good LC alignment characteristics on the NDLC thin films with ion beam exposure of 1800 eV. In thermal stability experiments, the alignment defect of the NLC on the NDLC surface with ion beam irradiation above annealing temperature of $250^{\circ}C$ can be observed. Therefore, the good thermal stability and LC alignment for NLC by ion beam aligned NDLC thin films can be achieved.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.37-43
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• 2009

Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.

• Journal of Korean Society of Environmental Engineers
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• v.33 no.12
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• pp.907-912
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• 2011

Development of visible light responsive photocatalysts is a promising research area to facilitate utilization of solar energy for hydrogen production via photocatalytic water splitting. In this study two groups of samples, nitrogen (N)-doped niobium pentoxide ($Nb_2O_5$) and titanium dioxide ($TiO_2$) ($Nb_2O_5-N$, $HNb_3O_8-N$, $TiO_2-N$) and N-undoped ones ($Nb_2O_5$ and $TiO_2$) were tested. In order to utilize visible light, nitrogen atoms were doped in selected photocatalysts by using urea. A shift of the absorption edges of the Ndoped samples in the visible light region was observed. Under visible light irradiation, N-doped samples were more prominent photocatalytic activities than the N-undoped samples. Specifically, 99.7% of rhodamine B (RhB) was degraded after 60 minutes of visible light irradiation with $TiO_2-N$. Since $TiO_2-N$ shows the highest activity of RhB degradation, it was supposed to generate the highest current response. However, $HNb_3O_8-N$ showed the highest current response ($63.7mA/cm^2$) than $TiO_2-N$. More interestingly, when we compare the hydrogen production, $Nb_2O_5-N$ produced $19.4{\mu}mol/h$ of hydrogen.

• Journal of Electrochemical Science and Technology
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• v.8 no.4
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• pp.338-343
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• 2017

Activated carbon has lower electrical conductivity and reliability than other carbonaceous materials because of the oxygen functional groups that form during the activation process. This problem can be overcome by doping the material with heteroatoms to reduce the number of oxygen functional groups. In the present study, N, F co-doped activated carbon (AC-NF) was successfully prepared by a microwave-assisted hydrothermal method, utilizing commercial activated carbon (AC-R) as the precursor and ammonium tetrafluoroborate as the single source for the co-doping of N and F. AC-NF showed improved electrical conductivity ($3.8\;S\;cm^{-1}$) with N and F contents of 0.6 and 0.1 at%, respectively. The introduction of N and F improved the performance of the pertinent supercapacitor: AC-NF exhibited an improved rate capability at current densities of $0.5-50mA\;cm^{-2}$. The rate capability was higher compared to that of raw activated carbon because N and F codoping increased the electrical conductivity of AC-NF. The developed method for the co-doping of N and F using a single source is cost-effective and yields AC-NF with excellent electrochemical properties; thus, it has promising applications in the commercialization of energy storage devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.199-200
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• 2009

This paper describes the electrical properties of polycrystalline (poly) 3C-SiC thin films with different nitrogen doping concentrations. The in-situ-doped poly 3C-SiC thin films were deposited by using atmospheric-pressure chemical vapor deposition (APCVD) at $1200^{\circ}C$ with hexamethyldisilane (HMDS: $Si_2$ $(CH_3)_6)$ as a single precursor and 0 ~ 100 sccm of $N_2$ as the dopant source gas. The peaks of the SiC (111) and the Si-C bonding were observed for the poly 3C-SiC thin films grown on $SiO_2/Si$ substrates by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) analyses, respectively. The resistivity of the poly 3C-SiC thin films decreased from $8.35\;{\Omega}{\cdot}cm$ for $N_2$ of 0 sccm to $0.014\;{\Omega}{\cdot}cm$ with $N_2$ of 100 sccm. The carrier concentration of the poly 3C-SiC films increased with doping from $3.0819\;{\times}\;10^{17}$ to $2.2994\;{\times}\;10^{19}\;cm^{-3}$, and their electronic mobilities increased from 2.433 to $29.299\;cm^2/V{\cdot}S$.

• Bulletin of the Korean Chemical Society
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• v.32 no.6
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• pp.1902-1906
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• 2011

Sulfonated poly(fluorinated arylene ether)s (SDF-F)/poly[(N-vinylimidazole)-co-(3-methacryloxypropyl-trimethoxysilane)] (poly(VI-co-MPS))/poly(tetrafluoroethylene) (PTFE) is prepared for a high temperature proton exchange membrane fuel cell (PEMFC). The reaction of the membrane with phosphoric acid forms silicate phosphor, as a chemically bound proton carrier, in the membrane. Thus-formed silicate phosphor, nitrogen in the imidazole ring, and physically bound phosphoric acid act as proton carriers in the membrane. The physico-chemical and electrochemical properties of the membrane are investigated by various analytical tools. The phosphoric acid uptake and proton conductivity of the SDF-F/poly(VI-co-MPS)/PTFE membrane are higher than those of SDF-F/PVI/PTFE. The power densities of cells with SDF-F/poly(VI-co-MPS)/PTFE membranes at 0.6 V are 286, 302, and 320 mW $cm^{-2}$ at 150, 170, and 190 $^{\circ}C$, respectively. Overall, the SDFF/poly(VI-co-MPS)/PTFE membrane is one of the candidates for anhydrous HT-PEMFCs with enhanced mechanical strength and improved cell performance.

• Bulletin of the Korean Chemical Society
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• v.35 no.6
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• pp.1794-1798
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• 2014

Graphitic g-$C_3N_4-WO_3$ composite was synthesized simply by decomposing melamine in the presence of $WO_3$ at $500^{\circ}C$. The obtained material was characterized by XRD, SEM, IR and XPS. The results showed that the as-prepared composite exhibits orthorhombic $WO_3$ phase coated by g-$C_3N_4$ and the g-$C_3N_4$ decomposed completely with N-doped $WO_3$ remaining at elevated calcination temperatures. The photocatalytic activity of the composite was evaluated by the photodegradation of methylene blue under visible light. An enhancement in photocatalytic activity for the graphitic g-$C_3N_4-WO_3$ composite compared to the conventional nitrogen-doped $WO_3$ was observed, which can be attributed to the presence of g-$C_3N_4$ in the material.

• Nuclear Engineering and Technology
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• v.5 no.4
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• pp.286-290
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• 1973

Hydroxide free KCI single crystals are prepared and doped with samall amounts of KSH or $K_2$S. The samples are subjected to neutron irradiations while keeping them under the condition of liquid nitrogen temperature in the dark. The irradiated ones are then bleached by using a U.V. lamp and analysed as four different kinds of chemical forms in $^{35}$ S whose valence states are -2, 0, +4 and +6. It semms that the sulphide fraction of $^{35}$ S in doped crystals is higher than that in pure crystals. In addition, two distinct patterns in bleaching process up to 30 minutes results in a fast increase in the sulphide fraction and then the sulphide levels off to a slowly increasing region upon prolonged bleaching. A detailed description on the distribution of $^{35}$ S valence states will be made in connection with point defects in the crystals.

• Journal of the Mineralogical Society of Korea
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• v.17 no.4
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• pp.291-297
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• 2004

Phosphorus is one of the interesting impurities in diamond, because it produces n-type semiconducting character. The character has been studied with spectroscopic methods as well as electric method, but most of the diamond used for these studies are conducted by the CVD (Chemical Vapor Deposition) diamond. In this study, we synthesized the phosphorus doped HPHT (High Pressure and High Temperature) diamond and investigated the characterization using CL spectroscopy to determine how phosphorus incorporated. As a result, the undocumented peaks of 248 and 603 nm as well as the reported peaks (239 nm, 240 ～ 270 nm) at the previous studies were observed. These luminescence peaks may be due to the complex defect of phosphorus with other impurities such as boron and nitrogen.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.325-328
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• 2008

This paper describes the electrical properties of poly (polycrystalline) 3C-SiC thin films with different nitrogen doping concentrations. In-situ doped poly 3C-SiC thin films were deposited by APCVD at $1200^{\circ}C$ using HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$) as Si and C precursor, and $0{\sim}100$ sccm $N_2$ as the dopant source gas. The peak of SiC is appeared in poly 3C-SiC thin films grown on $SiO_2/Si$ substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of poly 3C-SiC thin films decreased from $8.35{\Omega}{\cdot}cm$ with $N_2$ of 0 sccm to $0.014{\Omega}{\cdot}cm$ with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from $3.0819{\times}10^{17}$ to $2.2994{\times}10^{19}cm^{-3}$ and their electronic mobilities increased from 2.433 to $29.299cm^2/V{\cdot}S$, respectively.