Journal of the Mineralogical Society of Korea (한국광물학회지)

The Mineralogical Society of Korea (한국광물학회)
권호 표지

Spectroscopic Characterization of Phosphorus Doped HPHT Diamond

인이 첨가된 고온 . 고압 다이아몬드의 분광학적 특성

  • 정정인 (공주대학 지구과학 교육과) ;
  • 김희수 (공주대학 지구과학 교육과)
  • Published : 2004.12.01
Download PDF
⟨ Previous Next ⟩

Abstract

Phosphorus is one of the interesting impurities in diamond, because it produces n-type semiconducting character. The character has been studied with spectroscopic methods as well as electric method, but most of the diamond used for these studies are conducted by the CVD (Chemical Vapor Deposition) diamond. In this study, we synthesized the phosphorus doped HPHT (High Pressure and High Temperature) diamond and investigated the characterization using CL spectroscopy to determine how phosphorus incorporated. As a result, the undocumented peaks of 248 and 603 nm as well as the reported peaks (239 nm, 240 ～ 270 nm) at the previous studies were observed. These luminescence peaks may be due to the complex defect of phosphorus with other impurities such as boron and nitrogen.

인은 다이아몬드 내에 함유될 수 있는 흥미로운 불순물 중의 하나로서 n 타입의 반도체가 될 수 있다는 점에서 흥미롭다. 그러므로 전기적 특성 및 광학적 특성이 많이 연구되고 있지만, 대부분이 CVD (화학 기상합성) 다이아몬드에 관한 것이다. 본 연구에서는 인을 첨가한 HPHT (고압과 고온) 다이아몬드를 합성하고 인이 어떻게 함유되는가 알아보기 위하여 CL 분광기로 광학적 특성을 살펴보았다. 그 결과, 기존에 발견된 발광피크(239 nm, 240～270 nm)뿐만 아니라 248, 603 nm에서 새로운 발광피크가 발견되었다. 이러한 발광피크들은 인과 같이 혼입된 질소나 붕소와 같은 불순물이 공존하여 발생한 복합 결함에 의한 것이라고 판단된다.

Keywords

References

  1. Akaishi, M., Kanda, H., and Yamaoka, S. (1990) Synthesis of diamond from graphite-carbonite systems under very high temperature and pressure. J. Cryst. Growth, 104, 578-581.
  2. Akaishi, M., Kanda, H., and Yamaoka, S. (1993) Phosphorus: An elemental catalyst for diamond synthesis and growth. Science, 259, 1592-1593.
  3. Casanova, N., Tajani, A., Gheeraert. E., Bustarret, E., Garrido. J.A., Ncbcl, C.E., and Stutzmann M. (2002) Epitaxial growth of phosphorus doped diamond on {111} substrate. Diamond and Related Mater, 11, 328-331.
  4. Collins, T. A. (1992) The characterization of point defects in diamond by lumincscence spectroscopy. Diamond and Related Mater, 1, 457-469.
  5. Gheeraert, E., Koizumi, S., Teraji, T., Kanda, H., and Nesladek, M. (1999) Electronic states of boron and phosphorus in diamond. Phys. State Sol. (a), 174, 39-51.
  6. Isoya, J., Kanda, H., Akaishi, M., Morita, Y., and Oshima, T. (1997) ESR studies of incorporatioll of phosphorus into high-pressure synthetic diamond. Diamond and Related Mater, 6, 356-360.
  7. Kanda, H. (1998) Impurities and optical properties of synthetic diamond. The Review of High Pressure Science and Technology, 8, 155-162.
  8. Kanda, H., Watanabe, S., Koizumi, S., and Teraji, T. (2003) Characterization of phosphorus doped CVD diamond films by cathodoluminescence spectroscopy and topography. Diamond and Related Mater, 12, 20-25.
  9. Koizumi, S., Kamo, M., Sato, Y., Ozaki, H., and Inuzllka T. (1997) Growth and characterization of phosphorus doped {111} homocpitaxial diamond thin films. Appl. Phys. Lett., 71, 1065-1067.
  10. Michau, D., Kanda, H., and Ymaoka, S. (1999) Crystal growth of diamond from a phosphorus solvent under high pressure-high temperature conditions. Diamond and Related Mater, 8, 1125-1129.
  11. Nakazawa, K., Tanabe, K., Tachiki, M., Kawarada, H., and Koizumi, S. (2001) Excitonie recombination radiation in phosphorus-doped CVD diamonds. Phys. Rev., B 64, 235203.
  12. Nesladek, M., Meykens, K., Haenen, K., Stals, L.M., Teraji, T., and Koizumi, S. (1999) Low-temperature spectroscopic study of n-type diamond. Phys. Rev. B., 59, 14852-14855.
  13. Stemschulte, H., Thonke, K., and Sauer, R. (1999) Optical evidence for 630-meV phosphorus donor in synthetic diamond. Phys. Rev. B., 59, 12924-12927.