• Title/Summary/Keyword: nitrogen ion

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Synergistic Effect of Nitrogen and Molybdenum on Localized Corrosion of Stainless Steels

  • Kim, Y.S.
    • Corrosion Science and Technology
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    • v.9 no.1
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    • pp.20-28
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    • 2010
  • According to the bipolar model, ion selectivity of some species in the passive film is important factor to control the passivation. An increase of cation selectivity of outer layer of the passive film can stabilize the film and improves the corrosion resistance. Therefore, the formation and roles of ionic species in the passive film should be elucidated. In this work, two types of solution (hydrochloric or sulfuric acid) were used to test high N and Mo-bearing stainless steels. The objective of this work was to investigate the formation of oxyanions in the passive film and the roles of oxyanions in passivation of stainless steel. Nitrogen exists as atomic nitrogen, nitric oxide, nitro-oxyanions (${NO_x}^-$), and N-H species, not nitride in the passive film. Because of its high mobility, the enriched atomic nitrogen can act as a reservoir. The formation of N-H species buffers the film pH and facilitates the formation of oxyanions in the film. ${NO_x}^-$ species improve the cation selectivity of the film, increasing the oxide content and film density. ${NO_x}^-$ acts similar to a strong inhibitor both in the passive film and at active sites. This facilitates the formation of chromium oxide. Also, ${NO_x}^-$ can make more molybdate and nitric oxide by reacting with Mo. The role of Mo addition on the passivation characteristics of stainless steel may differ with the test environment. Mo exists as metallic molybdenum, molybdenum oxide, and molybdate and the latter facilitates the oxide formation. When nitrogen and molybdenum coexist in stainless steel, corrosion resistance in chloride solutions is drastically increased. This synergistic effect of N and Mo in a chloride solution is mainly due to the formation of nitro-oxyanions and molybdate ion. Oxyanions can be formed by a 'solid state reaction' in the passive film, resulting in the formation of more molybdate and nitric oxide. These oxyanions improve the cation selectivity of the outer layer and form more oxide and increase the amount of chromium oxide and the ratio of $Cr_2O_3/Cr(OH)_3$ and make the film stable and dense.

Monitoring of Nitrogen Ion in Nitrifying Biofilm using an Ion Selective Microelectrode (이온선택성 미소전극을 이용한 질산화 생물막내의 질소 이온의 농도 모니터링)

  • Seon, Ji-Yun;Byun, Im-Gyu;Lee, Tae-Ho;Park, Tae-Joo
    • KSBB Journal
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    • v.25 no.1
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    • pp.85-90
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    • 2010
  • An ion selective microelectrode (ISME) was fabricated to measure concentrations of ammonium (${NH_4}^+$-N) and nitrate (${NO_3}^-$-N) according to the depth of nitrifying biofilm. The limits of detectability and validity of results were investigated to evaluate the ISME. The electromotive force (EMF) was directly proportional to the ion concentration, and average detection limits of ${NH_4}^+$ and ${NO_3}^-$ ISME were $10^{-5.14}$ and $10^{-5.18}$ M, respectively. The concentrations of ${NH_4}^+ $-N and ${NO_3}^-$-N in various depths on the nitrifying biofilm were measured by the ISME. When a modified Ludzack-Ettinger (MLE) process was operated at an HRT of 6 h, concentration gradients of ${NH_4}^+$-N in the bulk solution and biofilm at depths of $100\;{\mu}m$ decreased by $70\;{\mu}M$, while ${NO_3}^-$-N increased by $101\;{\mu}M$ and remained constant thereafter. At an HRT of 4 h, concentration gradients of ${NH_4}^+$-N at depths of $500\;{\mu}m$ decreased by $160\;{\mu}M$ and ${NO_3}^-$-N increased by $162;{\mu}M$ and remained constant thereafter. As HRT decreased, the concentration gradients of ${NH_4}^+$-N and ${NO_3}^-$-N between bulk solution and biofilm was higher due to the increase of nitrogen load. Also, the concentration gradients of the ${NH_4}^+$-N and ${NO_3}^-$-N of biofilm in the second aerobic tank were lower than those of the first aerobic tank, suggesting differences of nitrogen load and concentrations of DO between the first and second aerobic tank.

An Experimental Study on the Chemical Values of the Tap Water in Seoul (서울시 수도수의 이화학적 수질조사)

  • 홍태용
    • Journal of Environmental Health Sciences
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    • v.7 no.1
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    • pp.21-31
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    • 1981
  • This survey was carried out to investigate the temperature, pH value, nitrogen (ammonia, nitrite, nitrate), turbidity, color, chloride ion, $KMnO_4$ consumed, and hardness as chemical analysis of the tap water in Seoul city area during the period from September to Octobor, 1979, and to observe the differences among the values by the distance from the water purification plant and by the district supplied tap water from-the each water purification plant. The results obtained were as follows: 1) An average of the water temperature was $19.8\pm 0.2\circ$C. 2) An average of pH was $7.18\pm 0.02$. The difference among each district was statistically significant (p<0.01), but it was not observed among each distance. 3) An average of turbidity was $1.25\pm 0.12$ ppm. The difference among each district was highly significant (p<0.01), respectively, but not among each distance. 4) An average of color was $1.43\pm 0.16$ ppm, and there were statistically significant differences by the distance and by the district (p<0.01). 5) An average of ammonia nitrogen was $0.022\pm 0.005$ ppm. The differences among each distance, and district were statistically significant (P<0.01). 6) An average of nitrite nitrogen was $0.0050\pm 0.0013$ ppm, and the difference among each distance was highly significant (p<0.01), respectively, and each district showed statistical significance (p<0.01). 7) An average of nitrate nitrogen was $0.82\pm 0.08$ ppm. The difference among each district was significant (p<0.05), and each distance showed high significance (p<0.01). 8) An average of $KMnO_4$ consumed was $3.73\pm 0.16$ ppm, and the difference among each district was significant (p<0.05), but it was not observed among each distance. 9) An average of chloride ion was $8.56\pm 0.28$ ppm, and the difference among each district was higly significant (p<0.01), respectively, but it was not observed among each distance. 10) An average of hardness was $40.69\pm 1.17$ ppm, and there was statistically significant difference by each district (P<0.01), but not by distance. 11) The interrelation between temperature and pH of the tap water revealed the negative correlation from the coefficient of it as showed r=-0.6073 and p<0.01. 12) Except water temperature, there were negative correlationships between pH and other water qualities. 13) Correlation coefficients of $KMnO_4$ comsumed and ammonia nitrogen, nitrite nitrogen were statistically significant but that of $KMnO_4$ consumed and nitrate nitrogen showed no statistical correlationship. 14) Ammonia nitrogen seems to have high correlationship with nitrite nitrogen(r= +0.6669), but not with nitrate nitrogen. 15) Nitrate nitrogen seems to have statistically significant correlationship with nitrite nitrogen (r=+0.4959), but not with ammonia nitrogen. 16) The interrelation between chloride ion and hardness of the tap water revealed positive correlation from the coefficient of it as showed as r=+0.4888 and p<0.01.

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Lamellar Structured TaN Thin Films by UHV UBM Sputtering (초고진공 UBM 스퍼터링으로 제조된 라멜라 구조 TaN 박막의 연구)

  • Lee G. R.;Shin C. S.;Petrov I.;Greene J, E.;Lee J. J.
    • Journal of the Korean institute of surface engineering
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    • v.38 no.2
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    • pp.65-68
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    • 2005
  • The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.

Magnetic Properties and Production of Fe-N Phases by Plasma Source Ion Implantation (플라즈마 이온주입 방법에 의한 질화철 제조 및 자기적 성질)

  • 김정기;김곤호;김용현;한승희;김철성
    • Journal of the Korean Magnetics Society
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    • v.8 no.1
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    • pp.6-12
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    • 1998
  • Fe-N(iron-nitrogen) crystal phases were prepared by nitrogen ion implantation into $\alpha$-Fe foil with Plasma Source Ion Implantation (PSII). Ion implantation time of sample is treated 15 minutes(FeN15) and 30 minutes (FeN30). The nitrogen depth profiles measured by Auger electron spectroscopy (AES) were determined to be about 12000 $\AA$ and 4000 $\AA$ for the samples of FeN15 and FeN30, respectively. The results of vibrating sample magnetometer (VSM) show that the saturation magnetization of the samples of as-implanted FeN15 and FeN30 was higher than that of pure $\alpha$-Fe foil, which may be owing to $\alpha$'-$Fe_8N$ or $\alpha$"-$Fe_{16}N_2$ phases. Accordingly this study shows the possibility of the partial formation of $\alpha$' or $\alpha$" phase in iron nitrogen produced by PSII method.II method.

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Limitation of Nitrogen ion Implantation and Ionplating Techniques Applied for Improvement of Wear Resistance of Metallic Implant Materials (금속 임플란트 소재의 내마모성 향상을 위하여 적용되는 질소 이온주입 및 이온도금법의 한계)

  • 김철생
    • Journal of Biomedical Engineering Research
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    • v.25 no.2
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    • pp.157-163
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    • 2004
  • Nitrogen ion implantation and ion plating techniques were applied for improvement of the wear resistance of metallic implant materials. In this work, the wear dissolution behaviour of a nitrogen ion implanted super stainless steel (S.S.S, 22Cr-20Ni-6Mo-0.25N) was compared with those of S.S.S, 316L SS and TiN coated 316L SS. The amounts of Cr and Ni ions worn-out from the specimens were Investigated using an electrothermal atomic absorption spectrometry. Furthermore, the Ti(Grade 2) disks were coated with TiN, ZrN and TiCN by use of low temperature arc vapor deposition and the wear resistance of the coating layers was compared with that of titanium. The chemical compositions of the nitrogen ion implanted and nitride coated layers were examined with a scanting auger electron spectroscopy. It wat observed that the metal ions released from the nitrogen ion implanted S.S.S surface were significantly reduced. From the results obtained, it was shown that the nitrogen ion implanted zone obtained with 100 KeV ion energy was easily removed within 200,000 revolutions from a wear dissolution testing under a similar load condition when applied to artificial hip joint. The remarkable improvement in wear resistance weir confirmed by the nitrides coated Ti materials and the wear properties differ greatly according to the chemical composition of the coating layers. for specimens with the same coating thickness of about 3$\mu\textrm{m}$, TiCN coated Ti showed the highest wear resistance. However, after removing the coating layers, the wear rates of all nitrides coated Ti reverted to their normal rates of below 10,000 revolutions from Ti-disk-on-disk wear testing under the same load condition. From the results obtained, it is suggested that the insufficient depth of the 100 Kel N$\^$+/ ion implanted zone and of the nitrides coated layers of 3$\mu\textrm{m}$ are subject to restriction when used as frictional parts of load bearing implants.

A Study on the Memory Trap Analysis and Programming Characteristics of Reoxidized Nitrided Oxide (재산화 질화산화막의 기억트랩 분석과 프로그래밍 특성)

  • 남동우;안호명;한태현;이상은;서광열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.7
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    • pp.576-582
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    • 2002
  • Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

A Study on the Characteristics of High Energy Nitrogen ion Implanted CdS Thin Films (고에너지 질소 이온 주입된 CdS 박막 특성에 관한 연구)

  • 이재형;홍석주;양계준
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.4
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    • pp.712-718
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    • 2003
  • The effects of nitrogen ion implantation on vacuum evaporated cadmium sulphide (CdS) thin films were investigated by X-ray diffraction, optical transmittance spectra, and Raman scattering studies. The as-deposited CdS films have a hexagonal structure with preferential (0 0 2) orientation. Formation of Cd metallic clusters was observed in ion implanted films from the XRD patterns. The band gap of N+ implanted films decreased, whereas the optical absorption coefficient values increased with the increase of implantation dose. The Raman peak position appeared at 299 cm-1 and the FWHM increased with the ion dose. A decrease in the area of Raman peak of CdS Al(LO) mode is seen on implantation.

Research of Nitriding Process on Austenite Stainless Steel with Plasma Immersion Ion Beam (플라스마 이온증착 기술을 이용한 스테인리스강의 질화처리에 관한 연구)

  • Kim, Jae-Dol;Park, Il-Soo;Ok, Chul-Ho
    • Journal of Advanced Marine Engineering and Technology
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    • v.32 no.2
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    • pp.262-267
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    • 2008
  • Plasma immersion ion beam (PIIB) nitriding process is an environmentally benign and cost-effective process, and offers the potential of producing high dose of nitrogen ions in a way of simple, fast and economic technique for the high plasma flux treatment of large surface area with nitrogen ion source gas. In this report PIIB nitriding technique was used for nitriding on austenite stainless steel of AISI304 with plasma treatment at $250{\sim}500^{\circ}C$ for 4 hours, and with the working gas pressure of $2.67{\times}10^{-1}$ Pa in vacuum condition. This PIIB process might prove the advantage of the low energy high flux of ion bombardment and enhance the tribological or mechanical properties of austenite stainless steel by nitriding, Furthermore, PIIB showed a useful surface modification technique for the nitriding an irregularly shaped three dimensional workpiece of austenite stainless steel and for the improvement of surface properties of AISI 304, such as hardness and strength

Ion assisted deposition of $TiO_2$, $ZrO_2$ and $SiO_xN_y$ optical thin films

  • Cho, H.J.;Hwangbo, C.K.
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.75-79
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    • 1997
  • Optical and mechanical characteristics of $TiO-2, ZrO_2 \;and\; SiO_xN_y$ thin films prepared by ion assisted deposition (IAD) were investigated. IAD films were bombarded by Ar or nitrogen ion beam from a Kaufman ion source while they were grown in as e-beam evaporator. The result shows that the Ae IAD increases the refractive index and packing density of $TiO_2 films close to those of the bulk. For $ZrO_2$ films the Ar IAD increases the average refractive index decreases the negative inhomogeneity of refractive index and reverses to the positive inhomogeneity. The optical properties result from improved packing density and denser outer layer next to air The Ar-ion bombardment also induces the changes in microstructure of $ZrO_2$ films such as the preferred (111) orientation of cubic phase increase in compressive stress and reduction of surface roughness. Inhomogeneous refractive index SiOxNy films were also prepared by nitrogen IAD and variable refractive index of $SiO_xN_y$ film was applied to fabricate a rugate filter.

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