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A Study on the Characteristics of High Energy Nitrogen ion Implanted CdS Thin Films  

이재형 (군산대학교 전자정보공학부)
홍석주 (충주대학교 전자고학과 (충주대학교 ITEC 연구소))
양계준 (충주대학교 전자고학과 (충주대학교 ITEC 연구소))
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.7, no.4, 2003 , pp. 712-718 More about this Journal
Abstract
The effects of nitrogen ion implantation on vacuum evaporated cadmium sulphide (CdS) thin films were investigated by X-ray diffraction, optical transmittance spectra, and Raman scattering studies. The as-deposited CdS films have a hexagonal structure with preferential (0 0 2) orientation. Formation of Cd metallic clusters was observed in ion implanted films from the XRD patterns. The band gap of N+ implanted films decreased, whereas the optical absorption coefficient values increased with the increase of implantation dose. The Raman peak position appeared at 299 cm-1 and the FWHM increased with the ion dose. A decrease in the area of Raman peak of CdS Al(LO) mode is seen on implantation.
Keywords
cadmium sulphide (CdS); ion implantation; solar cells; Raman scattering;
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