• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.149-153
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• 2003

Chemical mechanical polishing (CMP) technology for global planarization of multi-level inter-connection structure has been widely studied for the next generation devices. CMP process has been paid attention to planarized pre-metal dielectric (PMD), inter-layer dielectric (ILD) interconnections. Expecially, shallow trench isolation (STI) used to CMP process on essential. Recently, the direct STI-CMP process without the conventional complex reverse moat etch process has established by using slurry additive with the high selectivity between $SiO_2$ and $Si_3N_4$ films for the purpose of process simplification and n-situ end point detection(EPD). However, STI-CMP process has various defects such as nitride residue, tom oxide and damage of silicon active region. To solve these problems, in this paper, we studied the planarization characteristics using a high selectivity slurry(HSS). As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of HSS STI-CMP process.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1884-1886
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• 2005

KrF 펄스 레이저 증착법(pulsed laser deposition: PLD)으로 ZnO 박막을 증착하여 평판 디스플레이 소자 구동용 박막 트랜지스터(thin film transistor) 소자를 제작하였다. 전도성이 높은 실리콘웨이퍼(c-Si, 하부전극) 기판 위에 LPCVD 법으로 silicon nitride 박막을 절연막으로 형성하고, 다양한 공정 조건에서 펄스 레이저 증착법으로 제작한 ZnO 박막을 증착하여 채널층으로 하였으며, Al 박막을 증착하고 패터닝하여 소스 및 드레인 전극으로 하였다. ZnO 박막의 증착 시에 기판 온도를 다양하게 조절하고 산소 분압을 변화시켜 ZnO 박막의 특성을 조절하였다. 제작된 박막의 표면특성은 AFM(atomic force microscopy)로 분석하고, 결정특성은 XRD(X-ray diffraction)로 조사하였다. ZnO 박막의 전기적 특성은 Hall-van der Pauw 법으로 측정하였고, 광학 투과도(optical transparency)를 UV-visible photometer로 조사하였다. ZnO-TFT 소자는 $10^6$ 수준의 on-off ratio와 $2.4{\sim}6.1cm^2/V{\cdot}s$의 전계효과이동도(field effect mobility)를 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.37-38
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• 2007

This paper reports the characteristics of piezoelectric microspeakers that are audible in open air with high quality piezoelectric AlN thin film according to the materials properties. When we use a tensile-stressed silicon nitride diaphragm as a supporting layer, the Sound Pressure Level (SPL) is relatively small. However, the SPL of the fabricated microspeakers that have compressive-stressed composite diaphragm show higher output pressure than those of tensile-stressed diaphragm. It produces more than 60dB from 100Hz to 15kHz and the highest SPL is about 100dB at 9.3kHz with 20 Vpeak-to-peak sinusoidal input biases and at 10 mm distances from the fabricated microspeakers to the reference microphone.

• Journal of Advanced Navigation Technology
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• v.17 no.5
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• pp.574-580
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• 2013

In this paper, The process of thin-film coating technology was applied to improve adhesion of the hardness thin film and nitride layer. This thin-film coating technology have formed composite thin-film to gain hardness and toughness used in press mold. The thin-film coating manufacturing technology increased vacuum present in the vacuum chamber and improved the throw ratio of the gun power using physical vapor deposition coating technology. Ti alloys target improved performance and surface material through the development of a composite film coating technology for various precision machining parts.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.708-712
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• 2008

The influence of high temperature gas nitriding (HTGN) in STS347 and STS310S steels was experimentally investigated. The HTGN was carried out at $1,050^{\circ}C{\sim}1,150^{\circ}C$ for 10 hrs in a gaseous atmosphere containing $1kg/mm^2$ of nitrogen. After HTGN, fine precipitates of $Cr_2N$ and NbN appeared in austenite on the surface of STS 347, while nitrogen pearlite, which was layeredof $Cr_2N$ and austenite alternatively, appeared in austenite on the surface of STS 310S. The surface hardness of HTGN-treated, STS 347 and STS 310S specimens was 250~360 Hv and 270~400 Hv, respectively, depending on the temperature of HTGN. The nitrogen content was analyzed 1.4 wt% and 1.6 wt% at the surface layer of STS 347 and STS 310S steels, respectively. In addition, an improvement in the corrosion resistance of HTGN treated specimens was observed.

• Membrane and Water Treatment
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• v.14 no.3
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• pp.115-120
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• 2023

The design theory for nanoporous filtration membranes needs to be established. The present study shows that the performance and technical advancement of nanoporous filtration membranes are determined by the fundamental parameter I (in the unit Watt^1/2) which is formulated as a function of the shear strength of the liquid-pore wall interface, the radius of the filtration pore, the membrane thickness, and the bulk dynamic viscosity of the flowing liquid. This parameter determines the critical power loss on a single filtration pore for initiating the wall slippage, which is important for the flux of the membrane. It also relates the membrane permeability to the power cost by the filtration pore. It is shown that for biological cellular membranes its values are on the scale 1.0E-8Watt^1/2, for mono-layer graphene membranes its values are on the scale 1.0E-9Watt^1/2, and for nanoporous membranes made of silica, silicon nitride or silicon carbonized its values are on the scale 1.0E-5Watt^1/2. The scale of the value of this parameter directly measures the level of the performance of a nanoporous filtration membrane. The carbon nanotube membrane has the similar performance with biological cellular membranes, as it also has the value of I on the scale 1.0E-8Watt^1/2.

• Current Optics and Photonics
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• v.7 no.2
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• pp.157-165
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• 2023

We propose a highly directional waveguide grating antenna for an optical phased array, achieving high directionality of more than 97% by interleaving the trenches with different etching depths in the silicon nitride layer, and adopting a multilayered structure. Meanwhile, the multilayered structure reduces the perturbation strength, which enables a centimeter-scale radiation length. The beam-steering range is 13.2°, with a wavelength bandwidth of 100 nm. The 1-dB bandwidth of the grating is 305 nm. The multilayered grating structure has a large tolerance to the fabrication variation and is compatible with CMOS fabrication techniques.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.351-355
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• 1999

BN films with a high content of cubic phase has been deposited by a variety of techniques. It is well known that c-BN films grow with a unique microstructure consisting of $sp^2$ and $sp^{3-}$ bonded layers. Because of existence of the initially grown $sp^{2-}$ /bonded layer, BN films are not adhesive to the substrates. In this study, post-N$^{+ }$ / implantation was applied to improve the adhesion of the films. A Monte Carlo program TAMIX was used to simulate this modification process. The simulation showed nitrogen concentration profile at $1200\AA$ in depth in case of 50keV -implantation energy. FTIR spectra of the $N^{+}$ implanted specimens demonstrated a strong change of absorption band at 1380 cm$^{ -1 }$The films were also investigated by HRTEM. From these results, it is concluded that the post ion implantation could be an effective technique which improves the adhesion between BN film and substrate.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.47-52
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• 2017

This research scrutinizes the data retention characteristics of the MLC NAND Flash Memory instigated by the loss effect of trapped charge when the memory is in the state of program saturation. It is attributed to the threshold voltage saturation phenomenon which engenders an interruption to the linear increase of the voltage in the memory cell. This phenomenon is occasioned by the outflow of the trapped charge from the floating gate to the control gate, which has been programmed by the ISPP (Incremental Step Pulse Programming), via Inter-Poly Dielectric (IPD). This study stipulates the significant degradation of thermal retention characteristics of threshold voltage in the saturation region in contrast to the ones in the linear region. Thus the current study evaluates the data retention characteristics of voltage after the program with a repeated reading test in various measurement conditions. The loss effect of trapped charge is found in the IPD layer located between the floating gate and the control gate especially in the nitride layer of the IPD. After the thermal stress, the trapped charge is de-trapped and displays the impediment of the characteristic of reliability. To increase the threshold saturation voltage in the NAND Flash Memory, the storage ability of the charge in the floating gate must be enhanced with a well-thought-out designing of the module in the IPD layer.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.393-399
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• 2016

We have successfully fabricated 3D (3-dimensional) nanostructures of $TiO_2$ coated with a $g-C_3N_4$ layer via hydrothermal and sintering methods to enhance photoelectrochemical (PEC) performance. Due to the coupling of $TiO_2$ and $g-C_3N_4$, the nanostructures exhibited good performance as the higher conduction band of $g-C_3N_4$, which can be combined with $TiO_2$. To fabricate 3D nanostructures of $g-C_3N_4/TiO_2$, $TiO_2$ was first grown as a double layer structure on FTO (Fluorine-doped tin oxide) substrate at $150^{\circ}C$ for 3 h. After this, the $g-C_3N_4$ layer was coated on the $TiO_2$ film at $520^{\circ}C$ for 4 h. As-prepared samples were varied according to loading of melamine powder, with values of loading of 0.25 g, 0.5 g, 0.75 g, and 1 g. From SEM and TEM analysis, it was possible to clearly observe the 3D sample morphologies. From the PEC measurement, 0.5 g of $g-C_3N_4/TiO_2$ film was found to exhibit the highest current density of $0.12mA/cm^2$, along with a long-term stability of 5 h. Compared to the pristine $TiO_2$, and to the 0.25 g, 0.75 g, and 1 g $g-C_3N_4/TiO_2$ films, the 0.5 g of $g-C_3N_4/TiO_2$ sample was coated with a thin $g-C_3N_4$ layer that caused separation of the electrons and the holes; this led to a decreasing recombination. This unique structure can be used in photoelectrochemical applications.