• Title/Summary/Keyword: nitride layer

Search Result 441, Processing Time 0.029 seconds

Electrical Characteristics of Devices with Material Variations of PMD-1 Layers (PMD-1 층의 물질변화에 따른 소자의 전기적 특성)

  • Seo, Yonq-Jin;Kim, Sang-Yong;Yu, Seok-Bin;Kim, Tae-Hyung;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the KIEE Conference
    • /
    • 1998.07d
    • /
    • pp.1327-1329
    • /
    • 1998
  • It is very important to select superior inter-layer PMD(Pre Metal Dielectric) materials which can act as penetration barrier to various impurities created by CMP processes. In this paper, hot carrier degradation and device characteristics were studied with material variation of PMD-1 layers, which were split by LP-TEOS, SR-Oxide, PE-Oxynitride, PE-Nitride, PE-TEOS films. It was observed that the oxynitride and nitride using plasma was greatly decreased in hot carrier effect in comparison with silicon oxide. Consequently, silicon oxide turned out to be a better PMD-1 material than PE-oxynitride and PE-nitride. Also, LP-TEOS film was the best PMD-1 material Among the silicon oxides.

  • PDF

Silicon Nitride Cantilever Array Integrated with Si Heaters and Piezoelectric Sensors for Probe-based Data Storage

  • Nam Hyo-Jin;Kim Young-Sik;Lee Caroline Sunyong;Jin Won-Hyeog;Jang Seong-Soo;Cho Il-Joo;Bu Jong-Uk
    • Transactions of the Society of Information Storage Systems
    • /
    • v.1 no.1
    • /
    • pp.73-77
    • /
    • 2005
  • In this paper, a new silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been firstly developed to improve the uniformity of the initial bending and the mechanical stability of the cantilever array for thermo-piezoelectric SPM(scanning probe microscopy) -based data storages. This nitride cantilever shows thickness uniformity less than $2\%$. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. For high speed operation, 128${\times}$128 probe array was developed.

  • PDF

Atomic Layer $MoS_2$ Field-effect Transistors on Hexagonal Boron Nitride Substrate

  • Yu, Yeong-Jun;Lee, Gwan-Hyeong;Hone, James;Kim, Philip
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.192-192
    • /
    • 2012
  • The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals like graphene, hexagonal boron nitride (h-BN), molybdenum disulfate ($MoS_2$) and organic thin film have been studied intensely. In this talk, I will demonstrate the $MoS_2$ field effect transistor (FET) toward performance enhancement by insulating h-BN substrate.

  • PDF

Surface Characterization of $\beta$-Sialon Powder Prepared from Hadong Kaolin (하동 카올린으로부터 제조한 $\beta$-Sialon 분체의 표면특성)

  • 임헌진;이홍림
    • Journal of the Korean Ceramic Society
    • /
    • v.28 no.12
    • /
    • pp.961-968
    • /
    • 1991
  • The nature and composition of the surfaces of silicon nitride and β-Sialon powders were investigated using high voltage and high resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). β-Sialon powder was produced from Hadong kaolin by the carbothermic reduction and simultaneous nitridation. XPS showed that Al was contained in the surface of β-Sialon powder besides Si, N and O components, which is different from that of silicon nitride. It was supposed that Al in the surface of β-Sialon was bonded with oxygen from the oxygen-nitrogen ratio and the measurement of Al 2p binding energies. After both silicon nitride and β-Sialon powders were oxidized at 800℃ for 24h in air, nitrogen didn't exist in the surfaces and the depth of the oxide layer increased. The measurement of Si 2p binding energies showed that the chemical shifts occurred from Si3N2O and/or Si2N2O to SiO2 phase.

  • PDF

The Field Modulation Effect of a Fluoride Plasma Treatment on the Blocking Characteristics of AlGaN/GaN High Electron Mobility Transistors

  • Kim, Young-Shil;Seok, O-Gyun;Han, Min-Koo;Ha, Min-Woo
    • Transactions on Electrical and Electronic Materials
    • /
    • v.12 no.4
    • /
    • pp.148-151
    • /
    • 2011
  • We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

The Characteristics of silicon nitride thin films prepared by atomic layer deposition method using $SiH_2Cl_2 and NH_3$ ($SiH_2Cl_2와 NH_3$를 이용하여 원자층 증착법으로 형성된 실리콘 질화막의 특성)

  • 김운중;한창희;나사균;이연승;이원준
    • Journal of the Korean Vacuum Society
    • /
    • v.13 no.3
    • /
    • pp.114-119
    • /
    • 2004
  • Silicon Nitride thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method at $550^{\circ}C$ using alternating exposures of $SiH_2Cl_2$ and $NH_3$, and the physical and electrical propeties of the deposited films were characterized. The thickness of the films was linearly increased with the number of deposition cycles, and the growth rate of the films was 0.13 nm/cycle with the reactant exposures of $3.0\times10^{9}$ L. The silicon nitride thin films deposited by Alf exhibited similar physical properties with the silicon nitride thin films deposited by low-pressure chemical vapor deposition (LPCVD) method in terms of refractive index and wet etch rate, lowering deposition temperature by more than 200 $^{\circ}C$. The ALD films showed the leakage current density of 0.79 nA/$\textrm{cm}^2$ at 3 MV/cm, which is lower than 6.95 nA/$\textrm{cm}^2$ of the LPCVD films under the same condition.

Over 8% efficient nanocrystal-derived Cu2ZnSnSe4 solar cells with molybdenum nitride barrier films in back contact structure

  • Pham, Hong Nhung;Jang, Yoon Hee;Park, Bo-In;Lee, Seung Yong;Lee, Doh-Kwon
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.426.2-426.2
    • /
    • 2016
  • Numerous of researches are being conducted to improve the efficiency of $Cu_2ZnSnSe_4$ (CZTSe)-based photovoltaic devices, which is one of the most promising candidates for low cost and environment-friendly solar cells. In this work, we concentrate on the back contact of the devices. A proper thickness of $MoSe_2$ in back contact structure is believed to enhance adhesion and ohmic contact between Mo back contact and absorber layer. Nevertheless, too thick $MoSe_2$ layers that are grown during high-temperature selenization process can impede the current collection, thus resulting in low cell performance. By applying molybdenum nitride as a barrier in back contact structure, we were able to control the thickness of $MoSe_2$ layer, which resulted in lower series resistance and higher fill factor of CZTSe devices. The phase transformation of Mo-N binary system was systematically studied by changing $N_2$ concentration during the sputtering process. With a proper phase of Mo-N fabricated by using an adequate partial pressure of $N_2$, the efficiency of CZTSe solar cells as high as 8.31% was achieved while the average efficiency was improved by about 2% with respect to that of the referent cells where no barrier layer was employed.

  • PDF

Formation of Metal Electrode on Si3N4 Substrate by Electrochemical Technique (전기화학 공정을 이용한 질화규소 기판 상의 금속 전극 형성에 관한 연구)

  • Shin, Sung-Chul;Kim, Ji-Won;Kwon, Se-Hun;Lim, Jae-Hong
    • Journal of the Korean institute of surface engineering
    • /
    • v.49 no.6
    • /
    • pp.530-538
    • /
    • 2016
  • There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.

Characteristics of Crystalline Silicon Solar Cells with Double Layer Antireflection Coating by PECVD (결정질 실리콘 태양전지의 이중 반사방지막 특성에 대한 연구)

  • Kim, Jin-Kuk;Park, Je-Jun;Hong, Ji-Hwa;Kim, Nam-Soo;Kang, Gi-Hwan;Yu, Gwon-Jong;Song, Hee-Eun
    • 한국태양에너지학회:학술대회논문집
    • /
    • 2012.03a
    • /
    • pp.243-247
    • /
    • 2012
  • The paper focuses on an anti-reflection (AR) coating deposited by PECVD in silicon solar cell fabrication. AR coating is effective to reduce the reflection of the light on the silicon wafer surface and then increase substantially the solar cell conversion efficiency. In this work, we carried out experiments to optimize double AR coating layer with silicon nitride and silicon oxide for the silicon solar cells. The p-type mono crystalline silicon wafers with $156{\times}156mm^2$ area, 0.5-3 ${\Omega}{\cdot}cm$ resistivity, and $200{\mu}m$ thickness were used. All wafers were textured in KOH solution, doped with $POCl_3$ and removed PSG before ARC process. The optimized thickness of each ARC layer was calculated by theoretical equation. For the double layer of AR coating, silicon nitride layer was deposited first using $SiH_4$ and $NH_3$, and then silicon oxide using $SiH_4$ and $N_2O$. As a result, reflectance of $SiO_2/SiN_x$ layer was lower than single $SiN_x$ and then it resulted in increase of short-circuit current and conversion efficiency. It indicates that the double AR coating layer is necessary to obtain the high efficiency solar cell with PECVD already used in commercial line.

  • PDF