• Korean Journal of Metals and Materials
• /
• 제50권1호
• /
• pp.78-85
• /
• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• The Transactions of the Korean Institute of Power Electronics
• /
• 제26권5호
• /
• pp.325-333
• /
• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• Journal of Powder Materials
• /
• 제26권2호
• /
• pp.146-155
• /
• 2019

Rare earth magnets are the strongest type of permanent magnets and are integral to the high tech industry, particularly in clean energies, such as electric vehicle motors and wind turbine generators. However, the cost of rare earth materials and the imbalance in supply and demand still remain big problems to solve for permanent magnet related industries. Thus, a magnet with abundant elements and moderate magnetic performance is required to replace rare-earth magnets. Recently, $a^{{\prime}{\prime}}-Fe_{16}N_2$ has attracted considerable attention as a promising candidate for next-generation non-rare-earth permanent magnets due to its gigantic magnetization (3.23 T). Also, metastable $a^{{\prime}{\prime}}-Fe_{16}N_2$ exhibits high tetragonality (c/a = 1.1) by interstitial introduction of N atoms, leading to a high magnetocrystalline anisotropy constant ($K_1=1.0MJ/m^3$). In addition, Fe has a large amount of reserves on the Earth compared to other magnetic materials, leading to low cost of raw materials and manufacturing for industrial production. In this paper, we review the synthetic methods of metastable $a^{{\prime}{\prime}}-Fe_{16}N_2$ with film, powder and bulk form and discuss the approaches to enhance magnetocrystalline anisotropy of $a^{{\prime}{\prime}}-Fe_{16}N_2$. Future research prospects are also offered with patent trends observed thus far.

• Journal of the Korea Institute of Military Science and Technology
• /
• 제21권6호
• /
• pp.760-766
• /
• 2018

The present study investigates the effect of PMMA and BN content on microstructure, mechanical and dielectric properties of silicon nitride($Si_3N_4$) ceramics in $Y_2O_3-Al_2O_3$ additive system. The total additive content was fixed at 8 wt.% and the amount of PMMA varies from 0 to 40 wt.% and BN varies from 0 to 36 wt.%, respectively. The crystalline phases of the samples were determined by X-ray diffraction analysis. All the sintered sample shows complete transformation of ${\alpha}$ to ${\beta}-Si_3N_4$ during the sintering process indicated that the phase transformation was unaffected by the PMMA or BN content. However, the microstructure shows that the residual porosity increased with increasing PMMA and BN content. In addition, the flexural strength and the dielectric constant decrease with addition of PMMA and BN due to the residual porosity. This article provides empirical study of design parameters for $Si_3N_4$-based radome materials.

• Journal of the Korean institute of surface engineering
• /
• 제52권3호
• /
• pp.163-170
• /
• 2019

Durability of instrument is one of the most important factor to ensure accurate treatment and decrease failure for the orthopedic surgical operation. Normally, a set-screw driver tip has been processed with hard coating for their higher durability and wear resistance. And several surface modification methods were obtained such as titanium nitride (TiN) coating, diamond like carbon coating, other nitriding, and etc. In this study, we have surface modified on set-screw driver tip with TiN and DLC, investigated whether the TiN and DLC coatings affect the mechanical properties and durability of the set-screw driver tip in the pedicle screw system. The surface morphologies were observed with scanning-electron microscopy (SEM), and the static/dynamic torsional properties were investigated with universal testing machine based on ASTM F543. Coating thickness of each coatings were commonly around $1^{\circ}C$. Static torsional stiffness, and ultimate torque values for DLC and TiN coated samples were significantly higher than those of non-coated sample by the pared T-test. Surface morphology of after the dynamic torsional test was more clean with less scratch or friction traces from DLC coating than that of TiN coating and non-coated sample.

• Journal of Powder Materials
• /
• 제25권6호
• /
• pp.494-500
• /
• 2018

In this study, the effect of the content of $MgO-CaO-Al_2O_3-SiO_2$ (MCAS) glass additives on the properties of AlN ceramics is investigated. Dilatometric analysis and isothermal sintering for AlN compacts with MCAS contents varying between 5 and 20 wt% are carried out at temperatures ranging up to $1600^{\circ}C$. The results showed that the shrinkage of the AlN specimens increases with increasing MCAS content, and that full densification can be obtained irrespective of the MCAS content. Moreover, properties of the AlN-MCAS specimens such as microhardness, thermal conductivity, dielectric constant, and dielectric loss are analyzed. Microhardness and thermal conductivity decrease with increasing MCAS content. An acceptable candidate for AlN application is obtained: an AlN-MCAS composite with a thermal conductivity over $70W/m{\cdot}K$ and a dielectric loss tangent (tan ${\delta}$) below $0.6{\times}10^{-3}$, with up to 10 wt% MCAS content.

• Transactions of Materials Processing
• /
• 제28권1호
• /
• pp.43-48
• /
• 2019

Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• 제29권11호
• /
• pp.857-867
• /
• 2018

Active array radar is evolving into digital active array radar. Digital active array radar has many advantages for making several simultaneous radar beams from the digital receive data of each element. A digital-type transceiver(TR) module is suitable for this goal in radar. In this work, the design results of an L-band digital TR module are presented to verify the possibility of fabrication for a digital active array antenna. This L-band digital TR module consists of a gallium-nitride-type HPA to achieve a more than 350-W peak output power and one-chip transceivers that include a digital waveform generator and analog digital converter. The receiving gain was 47 dB, the noise figure was less than 2 dB, and the final output type of the four channel receiving paths was one optic signal.

• Journal of IKEEE
• /
• 제23권2호
• /
• pp.425-430
• /
• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Journal of the Korean Ceramic Society
• /
• 제56권1호
• /
• pp.104-110
• /
• 2019

The low-temperature sintering behavior of AlN was investigated through a conventional method. $CaF_2$, CuO and Cu were selected as additives based on their low melting points. When sintered at $1600^{\circ}C$ for 8 h in $N_2$ atmosphere, a sample density > 98% was obtained. The X-ray data indicated that eutectic reactions below $1200^{\circ}C$ were found. Therefore, the current systems have lower liquid formation temperatures than other systems. The liquid phase showed high dihedral angles at triple grain junctions, indicating that the liquid had poor wettability on the grain surfaces. Eventually, the liquid was likely to vaporize due to the unfavorable wetting condition. As a result, a microstructure with clean grain boundaries was obtained, resulting in higher contiguity between grains. From EDS analysis, oxygen impurity seems to be well removed in AlN lattice. Therefore, it is believed that the current systems are beneficial for reducing sintering temperature and improving oxygen removal.