• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.9 no.3
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• pp.9-17
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• 2000

The use of ceramic inserts in steel forging tools offers significant technical and economic advantages over other materi-als of manufacture. These potential benefits can however only be realised by optimal design of the tools so that the ceramic insert are not subjected to stresses that led to their premature failure. In this paper the data on loading of the tools is determined from a commercial forging simulation package as the contact stress distribution on the die-workpiece interface and as temperature distributions in the die. This data can be processed as load input data for a finite-element die-stress analysis. Process simulation and stress analysis are thus combined during the design and a data exchange program has been developed that enables optimal design of the dies taking into account the elastic detections generated in shrink fitting the die inserts and that caused by the stresses generated in the forging process. The stress analysis of the dies is used to determine the stress conditions on the ceramic insert by considering contact and interference effects under both mechanical and thermal loads. Simulation results have been validated as a result of experimental investigation. Laboratory tests on ceramic insert dies have verified the superior performance of the Zirconia and Silicon Nitride ceramic insert in order to prolong maintenance life.

• Coupled systems mechanics
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• v.6 no.3
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• pp.273-286
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• 2017

We present a simple and easy-to-implement lumped stiffness model to elucidate the load transfer mechanism among all individual tube shells and intertube van der Waals (vdW) interactions in transversely compressed multi-walled carbon nanotubes (CNTs). Our model essentially enables theoretical predictions to be made of the relevant transverse mechanical behaviors of multi-walled tubes based on the transverse stiffness properties of single-walled tubes. We demonstrate the validity and accuracy of our model and theoretical predictions through a quantitative study of the transverse deformability of double- and triple-walled CNTs by utilizing our recently reported nanomechanical measurement data. Using the lumped stiffness model, we further evaluate the contribution of each individual tube shell and intertube vdW interaction to the strain energy absorption in the whole tube. Our results show that the innermost tube shell absorbs more strain energy than any other individual tube shells and intertube vdW interactions. Nanotubes of smaller number of walls and outer diameters are found to possess higher strain energy absorption capacities on both a per-volume and a per-weight basis. The proposed model and findings on the load transfer and the energy absorption in multi-walled CNTs directly contribute to a better understanding of their structural and mechanical properties and applications, and are also useful to study the transverse mechanical properties of other one-dimensional tubular nanostructures (e.g., boron nitride nanotubes).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.25-30
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• 2002

In this paper, high quality silicon nitride film is achieved using Plasma Enhanced Chemical Deposition(PECVD) system, and applied in passivating PHEMT's. Passivated PHEMT's(60 ${\mu}{\textrm}{m}$$\times$2 fingers) showed an increase of 2.7 % and 3 % in the drain saturation current and the maximum transconductance, respectively. The current gain cut-off frequency of 53 ㎓ and maximum oscillation frequency of 105 ㎓ were obtained from the fabricated PHEMT's.

• Nuclear Engineering and Technology
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• v.48 no.3
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• pp.660-672
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• 2016

In Part I of this paper, the two-temperature homogenized model for the fully ceramic microencapsulated fuel, in which tristructural isotropic particles are randomly dispersed in a fine lattice stochastic structure, was discussed. In this model, the fuel-kernel and silicon carbide matrix temperatures are distinguished. Moreover, the obtained temperature profiles are more realistic than those obtained using other models. Using the temperature-dependent thermal conductivities of uranium nitride and the silicon carbide matrix, temperature-dependent homogenized parameters were obtained. In Part II of the paper, coupled with the COREDAX code, a reactor core loaded by fully ceramic microencapsulated fuel in which tristructural isotropic particles are randomly dispersed in the fine lattice stochastic structure is analyzed via a two-temperature homogenized model at steady and transient states. The results are compared with those from harmonic- and volumetric-average thermal conductivity models; i.e., we compare $k_{eff}$ eigenvalues, power distributions, and temperature profiles in the hottest single channel at a steady state. At transient states, we compare total power, average energy deposition, and maximum temperatures in the hottest single channel obtained by the different thermal analysis models. The different thermal analysis models and the availability of fuel-kernel temperatures in the two-temperature homogenized model for Doppler temperature feedback lead to significant differences.

• Journal of Sensor Science and Technology
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• v.25 no.2
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• pp.116-123
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• 2016

This paper presents the fabrication and evaluation of the novel drag force type air flowmeter using MEMS technologies for the vehicle applications. To obtain the air drag force, the flowmeter utilized the curved beam structure, which was realized by the difference of residual stress between the silicon oxide layer and the silicon nitride layer. The paddle structure was applied for the maximum air drag force, and the dual-beam was adapted to prevent distortion. The basic experiments were performed in the wind tunnel, and the stable outputs were obtained. The device was applied to the internal combustion engine, and the results were compared with the HI-DS output where the convection thermal flowmeter was used as the reference sensor. The results indicated that the comparable resolutions and response times were obtained under the various engine speeds.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.73-73
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• 1999

A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.22-27
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• 2001

$\beta$-Si$_3$N$_4$종자입자 첨가가 소결조제로 Y-Mg-Si-Al-O-N계 oxynitride glass를 사용하여 일축가압 소결을 행한 SiC-Si$_3$N$_4$복합재료의 미세구조와 기계적 특성에 미치는 영향을 고찰하였다. 길게 자란 $\beta$-Si$_3$N$_4$입자들과 등방성의 $\beta$-SiC 입자들이 균일하게 분포된 미세구조를 얻었다. $\beta$-Si$_3$N$_4$종자입자 함량이 증가함에 따라 SiC-Si$_3$N$_4$복합재료의 강도와 파괴인성이 증가하였고, 이는 복합화에 기인하는 결함크기의 감소와 길게 자란 $\beta$-Si$_3$N$_4$입자에 의한 균열가교 및 균열회절 등에 기인하였다. SiC-70 wt% Si$_3$N$_4$복합재료의 대표적인 강도와 파괴인성은 각각 770 MPa과 6.2 MPa.m$^{1}$2/ 이었다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.83-88
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• 2003

The reset operation of a CCD image sensor was improved using charge trapping of a MOS structure to realize a loe voltage driving. A DC bias generating circuit was added to the reset structure which sets reference voltage and holds the signal charge to be detected. The generated DC bias is added to the reset pulse to give an optimized voltage margin to the reset operation, and is controlled by adjustment of the threshold voltage of a MOS transistor in the circuit. By the pulse-type stress voltage applied to the gate, the electrons and holes were injected to the gate dielectrics, and the threshold voltage could be adjusted ranging from 0.2V to 5.5V, which is suitable for controlling the incomplete reset operation due to the process variation. The charges trapped in the silicon nitride lead to the positive and negative shift of the threshold voltage, and this phenomenon is explained by Poole-Frenkel conduction and Fowler-Nordheim conduction. A CCD image sensor with $492(H){\;}{\times}{\;}510(V)$ pixels adopting this structure showed complete reset operation with the driving voltage of 3.0V. The resolution chart taken with the image sensor shows no image flow to the illumination of 30 lux, even in the driving voltage of 3.0V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.4
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• pp.293-298
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• 2006

Thermopiezoelectric method, using poly silicon heater and a piezoelectric sensor, was proposed for writing and reading in a probe based data storage system. Resistively heated tip writes data bits while scanning over a polymer media and piezoelectric sensor reads data bits from the self-generated charges induced by the deflection of the cantilever. 34${\times}$34 array of thermopiezoelectric nitride cantilevers were fabricated by a single step wafer level transfer method. We analyzed the noise level of the charge amplifier and measured the noise signal. With the sensor and the charge amplifier 20mn of deflection could be detected at a frequency of 10KHz. Reading signal was obtained from the cantilever array and the sensitivity was calculated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.52-62
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• 2004

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.