• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.561-569
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• 1988

Mixtures of very small amounts of additive, carbon and silica(about 0.46${\mu}{\textrm}{m}$) which synthesized by the hydrolysis of ethyl silicate, the molar ratio of SiO2/C was fixed to 1/10, was nitrided at 145$0^{\circ}C$. It was considered that the optimum amount of additive to promote the nitridation reaction was below 2.0wt%. By the addition of additive, the nitridation reaction was promoted and formation of $\beta$-Si3N4 was promoted at 145$0^{\circ}C$ for 1hour, but, the nitridation reaction was decreased and the ratio of $\alpha$/$\beta$ of Si3N4, was increased at 145$0^{\circ}C$ for 5 hours. The crystal phase was $\alpha$ phase and the nitridation reaction was promoted and the particle size of silicon nitride was become smaller by the addition of $\alpha$-Si3N4, but silicon nitride of whisker-like form was produced by the addition of transition elements. There was a difference in the lattice constants of $\alpha$-Si3N4, but no difference in its of $\beta$-Si3N4 according to kinds of added substance and reaction time.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.249-256
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• 1997

The effect of process parameter of plasma assisted chemical vapor deposition (PACVD) on the variation of the ratio between cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) in the film was in-vestigated. The plasma was generated by electric power with the frequency between 100 and 500 KHz. BCl3 and NH3 were used as a boron and nitrogen source respectively and Ar and hydrogen were added as a car-rier gas. Films were composed of h-BN and c-BN and its ratio varied with the magnitude of process parameters, voltage of the electric power, substrate bias voltage, reaction pressure, gas composition, sub-strate temperature. TEM observation showed that h-BN phase was amorphous while crystalline c-BN par-ticle was imbedded in h-BN matrix in the case of c-BN and h-BN mixed film.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.832-834
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• 1992

Using the PECVD method, the silicon nitride films were deposited by changing the $SiH_4/NH_3$ gas flow ratio from 0.2 to 1.4 at an interval of 0.2, AES, FTIR, and Spectroscopic Ellipsomter were used to analyze the film composition and structure, the refractive index, and the deposition rate. Also the C-V analysis was used to estimate the memory performance in the capacitor type MNOS memory devices, which utilized native oxide as the tunneling barrier, with the silicon nitride by the above deposition conditions. As a result, it was confirmed that the performance of MNOS memory devices with PECVD silicon nitride was comparable to that with LPCVD or APCVD silion nitride.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.744-744
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• 2009

The development of safe and suitable hydrogen storage materials is one of key issues for commercializing hydrogen as an energy carrier. Carbon based materials have been investigated for many years to store hydrogen by the adsorption of the gas on the surface of the carbon structure. Recently, it is reported that carbon nitride nanobells have high hydrogen storage capacity since the nitrogen atom plays an important role on attracting hydrogen molecules. Here we report carbon nitride microporous spheres (CNMS) which have the maximum surface area of 995.3 $m^2/g$. Melamine-Formaldehyde resin is the source of carbon and nitrogen in CNMS. Most of the CNMS pores have diameters in the range of 6 to 8 A which could give a penetration energy barrier to a certain molecule. In addition, the maximum hydrogen storage capacities of carbon nitride spheres are 1.9 wt% under 77 K and 1 atm.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.476-482
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• 1996

The multi-dielectric layer SiO$_{2}$/Si$_{3}$N$_{4}$/SiO$_{2}$(ONO) is used to improve electrical capacitance and to scale down the memory device. In this paper, improvement of the capacitance by reducing the bottom oxide thickness in the nitride deposition with load lock(L/L) vacuum system is studied. Bottom oxide thickness under the nitride layer is measured by ellipsometer both in L/L and non-L/L systems. Both results are in the range of 3-10.angs. and 10-15.angs., respectively, independent of the nitride and top oxide thickness. Effective thickness and cell capacitance for SONOS capacitor are in the range of 50-52.angs. and 35-37fF respectively in the case of nitride 70.angs. in L/L vacuum system. Compared with non-L/L system, the bottom oxide thickness in the case of L/L system decreases while cell capacitance increases about 4 fF. The results obtained in this study are also applicable to ONO scaling in the thin bottom oxide region of memory stacked capacitor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.247-248
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• 2006

Carbon nitride films were evaluated that they had many advantages for miniature micro-humidity-sensors using the standard CMOS technology humidity sensing properties and CV characteristics of the carbon nitride films have been investigated for fabricating one chip HUSFET(Humidity Sensitive Field Effect Transistor) humidity sensors Carbon nitride films were deposited on silicon substrate with meshed electrodes by reactive RF magnetron sputtering system. The capacitor-type humidity sensor revealed good humidity-impedance characteristics with a wide range of relative humidity changes, decreasing $254k{\Omega}$ to $16k{\Omega}$ according to increase of relative humidity between 5% ~ 95% and the films were very stable on the Si wafer. These results reveal that $CN_x$ thin films can be used for Si based or HUSFET structure one chip micro-humidity sensors.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.447-451
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• 2002

Pulsed DC-plasma nitriding has been applied to form nitride layer having only a diffusion layer. The discharge current with the variation of discharge gases is proportional to the intensity of $N_2^+$ peak in optical emission spectroscopy during the plasma nitriding. The discharge current, microhardness in surface of substrate and depth of nitride layer increased with the ratio of $N_2\;to\;H_2$ gas in discharge gases. When the ratio of $N_2\;to\;H_2$ is lower than 60% in the discharge gases, high microhardness value of 1100Hv nitride layer which contains no compound layer has been formed.

• Ceramist
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• v.22 no.3
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• pp.316-327
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• 2019

Carbon nitride has drawn broad interdisciplinary attention in diverse fields such as catalyst, energy storage, gas adsorption, biomedical sensing and even imaging. Intensive studies on carbon dioxide (CO₂) capture using carbon nitride materials with various nanostructures have been reported since it is needed to actively remove CO₂ from the atmosphere against climate change. This is mainly due to its tunable structural features, excellent physicochemical properties, and basic surface functionalities based on the presence of a large number of -NH or -NH₂ groups so that the nanostructured carbon nitrides are considered as suitable materials for CO₂ capture for future utilization as well. In this review, we summarize and highlight the recent progress in synthesis strategies of carbon nitride nanomaterials. Their superior CO₂ adsorption capabilities are also discussed with the structural and textural features. An outlook on possible further advances in carbon nitride is also included.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.872-875
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• 2003

Carbon nitride($CN_x$) thin films were deposited on quartz substrates using reactive RF magnetron sputtering system at uarious deposition conditions and investigated dielectric characteristics. Samples for capacitance measurements were of the MIM(Metal-Insulator-Metal) type devices. Aluminum film electrodes were prepared by a vacuum thermal evaporation method before and after the deposition of carbon nitride films. Capacitances were measured by a FLUKE PM6306 RCL Meter at room temperature. Current-voltage(I-V) characteristics and resistivity were measured by a CATS CA-EDA semiconductor test and analyzer. The carbon nitride films showed ${\alpha}-C_3N_4$ and ${\beta}-C_3N_4$ etc. peaks through Raman and FTIR. Observed surface of film and side structure using SEM(Scanning Electron Microscope), and measured thickness of film by ${\alpha}-step$. We can find that the dielectric constant was the lowest value in 50% nitrogen ratio and the resistivity was the highest value in 70% nitrogen ratio.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.12
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• pp.1237-1243
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• 2013

This study has focused on the effect of ultrasonic vibration table in ELID grinding process of aluminum nitride ceramics. Aluminum nitride ceramics has superior physical and chemical properties and widely used in IC, LSI substrate, package and so on. To achieve the high effective machining of brittle and high strength ceramics as like aluminum nitride, machining method combined ELID grinding and ultrasonic vibration has been adopted in this study. From the experimental results, material removal rate, MRR has been increased maximum 36 percent and spindle resistance has been decreased in using ultrasonic table. Surface roughness of ground surface became a little worse in using ultrasonic table but was somewhat improved in feed direction.