The Influence of the $SiH_4/NH_3$ Ratios on the Characteristics of Nonvolatile MNOS Memories during the PECVD Silicon Nitride Film deposition

PECVD 질화막 증착시 $SiH_4/NH_3$ 유량비가 비휘발성 MNOS 기억소자의 특성에 미치는 영향

Using the PECVD method, the silicon nitride films were deposited by changing the $SiH_4/NH_3$ gas flow ratio from 0.2 to 1.4 at an interval of 0.2, AES, FTIR, and Spectroscopic Ellipsomter were used to analyze the film composition and structure, the refractive index, and the deposition rate. Also the C-V analysis was used to estimate the memory performance in the capacitor type MNOS memory devices, which utilized native oxide as the tunneling barrier, with the silicon nitride by the above deposition conditions. As a result, it was confirmed that the performance of MNOS memory devices with PECVD silicon nitride was comparable to that with LPCVD or APCVD silion nitride.