• Proceedings of the Korean Vacuum Society Conference
• /
• 1997.07a
• /
• pp.26-26
• /
• 1997

• Proceedings of the Korean Vacuum Society Conference
• /
• 2003.08a
• /
• pp.38-39
• /
• 2003

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1997.05a
• /
• pp.35-35
• /
• 1997

• Proceedings of the Korean Magnestics Society Conference
• /
• 2016.11a
• /
• pp.45-45
• /
• 2016

• Proceedings of the Korean Vacuum Society Conference
• /
• 1996.06a
• /
• pp.40-41
• /
• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)

• Resources Recycling
• /
• v.26 no.3
• /
• pp.39-46
• /
• 2017

AlN powder was prepared by carbon reduction and subsequent nitridation method through lab- scale experiments. AlN powder was synthesized using the mixture of high purity $Al_2O_3$ powder and carbon black at $1,600{\sim}1,700^{\circ}C$ for 0.5~6 hours under nitrogen atmosphere (flow rate of nitrogen gas: $4.7{\times}10^{-6}{\sim}20{\times}10^{-6}m^3/sec$) with variation of charged height of the mixture powder. Experimental results showed that size of the synthesized particles grows with increasing of temperature. The reaction activation energy was calculated as 382 kJ/mol at the temperature range, and it was considered that chemical reaction is the rate determining step. Content of oxygen and nitrogen of the prpared samples were 0.71~0.96 wt% and 30.7~35.1 wt%. The results was similar with those of the commercial AlN product.

• Korean Journal of Materials Research
• /
• v.22 no.10
• /
• pp.539-544
• /
• 2012

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane $Al_2O_3$ substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the $Al_2O_3$ substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]$Al_2O_3$, and [10-10]AlN//[11-20]$Al_2O_3$. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of $1.6{\mu}m/h$, in which the growth direction was <0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about $8{\mu}m$ were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for $2{\mu}m{\times}2{\mu}m$ area) was obtained, which indicates a very flat surface.

• Journal of Powder Materials
• /
• v.28 no.3
• /
• pp.259-266
• /
• 2021

The (Ga_1-xZn_x)(N_1-xO_x) solid solution is attracting extensive attention for photocatalytic water splitting and wastewater treatment owing to its narrow and controllable band gap. To optimize the photocatalytic performance of the solid solution, the key points are to decrease its band gap and recombination rate. In this study, (Ga_1-xZn_x)(N_1-xO_x) nanofibers with various Zn fractions are prepared by electrospinning followed by calcination and nitridation. The effect of the composition and crystallinity of electrospun oxide nanofibers on the morphology and optical properties of the obtained solid-solution nanofibers are systematically investigated. The results show that the final shape of the (Ga_1-xZn_x) (N_1-xO_x) material is greatly affected by the crystallinity of the oxide nanofibers before nitridation. The photocatalytic properties of (Ga_1-xZn_x)(N_1-xO_x) with different Ga:Zn atomic ratios are investigated by studying the degradation of rhodamine B under visible light irradiation.

• Journal of the Korean Ceramic Society
• /
• v.29 no.5
• /
• pp.347-356
• /
• 1992

Various kaolin samples with different alumina content were prepared from calcined admixture of kaolin and ammonium sulfate by varying the treatment time in sulfuric acid. Samples were nitridated under N2 or N2-H2 atmosphere with changing the amount of added carbon, the reaction time and temperature. As the alumina content lowered, the size of kaolin particles decreased and the specific surface area increased. XRD analysis indicated that ${\alpha}$-quartz remained by decomposition of halloysite and meta-halloysite. Experimental results of nitridation behavior are summerized as follows; 1) Nitridation under N2 atmosphere. With the increase of C/SiO2 ratio and with the decrease of Al2O3 content, disappearance of XRD pattern peaks of mullite, ${\alpha}$-quartz and ${\alpha}$-Al2O3 were accelerated at 1300$^{\circ}C$. SiC was the main phase in the reaction product of acid-treated kaolin samples nitridated at 1300$^{\circ}C$ for 10 hours regardless of C/SiO2 ratio. But the XRD peak intensities of ${\beta}$-Si3N4, ${\beta}$-sialon and SiC did not show much difference when untreated raw kaolin was fired at the same condition. When the ratio of C/SiO2 was 3.5, ${\beta}$-sialon and ${\beta}$-Si3N4 existed in the reaction product of about 22% alumina containing kaolin sample fired at 1350$^{\circ}C$ for 7 hours. Only ${\beta}$-sialon existed in the same sample fired at 1400$^{\circ}C$ for 10 hours. ${\beta}$-sialon was obtained from all of the acid-treated kaolin samples fired at 1400$^{\circ}C$ for 40 hours, but AlN and SiC remained in the untreated kaolin sample. Z value of the ${\beta}$-sialon obtained from the 22% alumina containing kaolin sample fired at 1400$^{\circ}C$ for 40 hours was about 1.3(XRD) and 1.5(EDS). 2) Nitridation under 80N2+2OH2 mixed gas atmosphere with the C/SiO2 ratio of 1 Mullite was not found, but ${\alpha}$-Si3N4, and ${\beta}$-sialon were present in the reaction product of about 22% alumina containing kaolin sample fired at 1300$^{\circ}C$ for 10 hours. When untreated kaolin sample was nitridated at the same condition, mullite remained. AlN and SiC were not found in the reaction product of about 22% alumina containing kaolin sample fired at 1350$^{\circ}C$ for 5 hours. On the other hand, AlN and SiC remained in the product of untreated kaolin fired at the same condition.

• Journal of the Korean Ceramic Society
• /
• v.36 no.2
• /
• pp.193-202
• /
• 1999

Al powder, AlN powder, SiC whisker and sintering aids were wet-mixed, and then the specimens prepared with mixed powder were reacted by nitridation at 600∼1400$^{\circ}C$ for 5 hrs. It was cleat that the higher nitridation and the more SiC whisker content were, the better bending strength was. The specimen of Al50/AlN50 reacted at 1400$^{\circ}C$ for 5hrs had the nitridation percent of 97%, the shrinkage under 2%, and the relative density of 78%. And the maximum bending strength of reaction-bonded specimen was 250 MPa. The specimens completely nitrided were post-sintered at 1700, 1800 and 1900$^{\circ}C$ for 2hrs. The post-sintered body had the shrinkage under 6% and the relative density of 86%. Because of the formation of solid solution between AlN and SiC whisker over 1800$^{\circ}C$, the promotion of mechanical properties according to SiC whisker addition was not observed. The post-sintered body had the maximum bending strength of 195 MPa.