• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1350-1357
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• 1988

The dual dielectric films have been grown on single-crystalline silicon substrates with the thickness ranging from 125A to 180A at various gas and temperature conditions by using rapid thermal process that included independent nitridation step. The film characteristics and their dependence on the contents of the hydrochloric gas and the processing time have been studied. By the addition of the hydrochloric gas, the initial oxide thickness was significantly changed, but after sequential nitridation processes the thickness of the films was nevertheless a little bit varied within 10A. All the samples of the dual dielectric films show the increased breakdown voltages in proportion to the additive contents of the hydrochloric gas and also show the higher breakdown strengths than the thermal oxide and nitrided oxide films grown by the conventional furnance process or the rapid thermal nitridation process that was composed of the dependent nitridation cycles.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.149-153
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• 2019

HVPE is one of the GaN single crystal manufacturing methods which has been commercially widely used due to its high growth rate. HVPE method consists of a number of processes, in particular the nitridation of the substrate prior to GaN growth has a significant effect on the crystalline quality of the manufactured GaN single crystal. In this study, we investigated the effect of nitridation for crystalline quality of GaN when it was grown on the sapphire substrate. The whole growth conditions except for the nitridation process were the same, and the gas flow rate supplied to the sapphire substrate was variously changed during the nitridation. Here, we examined the effect of nitridation via the surface characterization of GaN single crystal grown by HVPE.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.561-569
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• 1988

Mixtures of very small amounts of additive, carbon and silica(about 0.46${\mu}{\textrm}{m}$) which synthesized by the hydrolysis of ethyl silicate, the molar ratio of SiO2/C was fixed to 1/10, was nitrided at 145$0^{\circ}C$. It was considered that the optimum amount of additive to promote the nitridation reaction was below 2.0wt%. By the addition of additive, the nitridation reaction was promoted and formation of $\beta$-Si3N4 was promoted at 145$0^{\circ}C$ for 1hour, but, the nitridation reaction was decreased and the ratio of $\alpha$/$\beta$ of Si3N4, was increased at 145$0^{\circ}C$ for 5 hours. The crystal phase was $\alpha$ phase and the nitridation reaction was promoted and the particle size of silicon nitride was become smaller by the addition of $\alpha$-Si3N4, but silicon nitride of whisker-like form was produced by the addition of transition elements. There was a difference in the lattice constants of $\alpha$-Si3N4, but no difference in its of $\beta$-Si3N4 according to kinds of added substance and reaction time.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.893-901
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• 1994

In this study, AlN powder of fine particle size and of high purity was synthesized by the carbothermal reduction-nitridation of monodisperse, spherical Al(OH)3 which had been prepared by sol-gel method using Al(O-sec-C4H9)3 as the starting material. Depending on the mixing order and kinds of reducing agents, the optimum condition for the preparation of AlN was determined as follows. AlN single-phase was produced by the carbothermal reduction-nitridation of (1) Benzene-washed Al(OH)3 and the reducing agent, carbon, which was mixed in a ball mill: for 5 hours at 140$0^{\circ}C$ under NH3 atmosphere; (2) The mixture prepared by hydrolysis of alkoxide solution into which carbon had been dispersed beforehand: for 5 hours at 135$0^{\circ}C$ ; (3) Al(OH)3 Poly(furfuryl alcohol) composite powder: for 2.5 hours at 135$0^{\circ}C$; (4) The mixture of Al(OH)3 and polyacrylonitrile: for 5 hours at 140$0^{\circ}C$. Addition of CaF2 increased the nitridation rate when carbon or polyacrylonitrile was used as the reducing agent; but it had no effect on the nitridation rate when furfuryl alcohol was used as the reducing agent.

• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.472-478
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• 2006

The effect of compositional and processing variables on a nitriding reaction of silicon powder compact and subsequent post sintering of RBSN (Reaction-Bonded Silicon Nitride) was investigated. The addition of a nitriding agent enhanced nitridation rate substantially at low temperatures, while the formation of a liquid phase between the nitriding agent and the sintering additives at a high temperature caused a negative catalyst effect resulting in a decreased nitridation rate. A liquid phase formed by solely an additive, however, was found to have no effect on nitridation for the additive amount used in this research. The original site of a decomposing pore former was loosely filled by a reaction product ($Si_3N_4$), which provided a specimen with nitriding gas passage. For SRBSN (Sintered RBSN) specimens of high porosity, only a marginal dimensional change was measured after post sintering. Its engineering implication for near-net shaping ability is discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.48-51
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• 2004

In this paper the importance of re-nitridation on a plasma-enhanced chemical-vapor deposited(PECVD) $SiO_2$ stacked on a thermally grown thin-nitrided $SiO_2$ on n-type 4H SiC have been investigated. Without the final re-nitridation process, the leakage current of metaloxidesemiconductor(MOS) was extremely large. It is believed that water and carbon, contamination from the low-thermal budget PECVD process, are the main factors that destroyed the high quality thin-buffer nitrided oxide. After re-nitridation annealing, the quality of the stacked gate oxide was improved. The reasons of this improvement are presented.

• Korean Journal of Materials Research
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• v.31 no.11
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• pp.635-641
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• 2021

Cr thin films with O added are deposited on sapphire substrate by DC sputtering and are nitrided in NH₃ atmosphere between 300 and 900 ℃ for various times. X-ray diffraction results show that nitridation begins at 500 ℃, forming CrN and Cr₂N. Cr oxides of Cr₂O₃ are formed at 600 ℃. And, at temperatures higher than 900 ℃, the intermediate materials of Cr₂N and Cr₂O₃ disappear and CrN is dominant. The atomic concentration ratios of Cr and O are 77% and 23%, respectively, over the entire thickness of as-deposited Cr thin film. In the sample nitrided at 600 ℃, a CrN layer in which O is substituted with N is formed from the surface to 90 nm, and the concentrations of Cr and N in the layer are 60% and 40%, respectively. For this reason, CrN and Cr₂N are distributed in the CrN region, where O is substituted with N by nitridation, and Cr oxynitrides are formed in the region below this. The nitridation process is controlled by inter-diffusion of O and N and the parabolic growth law, with activation energy of 0.69 eV.

• Journal of the Korean Ceramic Society
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• v.21 no.3
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• pp.253-258
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• 1984

This paper deals with the reaction-bonded silicon nitride I terms of its microstructural development during nitrida-tion. Silicon powder compacts were reacted with nitrogen at 1185$^{\circ}C$ and 13$65^{\circ}C$ according to the nitriding schedule. Microstructures of nitrided specimens were examined by means of optical and scanning electron microscope to discuss the nitridation or microstructural development at initial and intermediat stage of nitridation. Reaction products were also analysed by X-ray diffraction method at each stage of nitridation. The results indicate that ho-mogeneous and uniform microstructure with find porosity can be obtained only under the reaction condition. such as slow and relatively constant reaction rate with time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.24-26
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• 1988

The electrical properties of thin nitrided thermal oxides prepared by rapid thermal nitridation(RTN) have been studied. The flatband voltages were calculated using C-V measurement and found to vary as nitridation time and temperature. After nitridation an increase in the fixed oxide charge density was always observed, but the distribution of it as a function of annealing time was found to be random. The breakdown voltages were measured using curve tracer.

• Progress in Superconductivity
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• v.4 no.1
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• pp.64-67
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• 2002

The attenuation of millimeter waves (70-100 ㎓) propagating along Josephson Junction stripline had been measured by pattern recognition near gap voltage and proximity current bump. Test series arrays of 2000, 3000, and 4000 Josephson junctions with the area of $12\mu\textrm{m}$$\times$ $38\mu\textrm{m}$ had two sub-arrays with 50 Junctions at both ends. The arrays were fabricated with and without applying a plasma nitridation process to Nb ground plane. The effects of a nitridationprocess measured by the pattern recognition near gap voltage and proximity current bump were about 1.3-1.7 ㏈ and 1.6-1.8 ㏈, respectively. This means that the last sub-arrays with a nitridation process receive 26-34% more power than those without a nitridation process.