• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.235.1-235.1
• /
• 2015

Artificially-engineered materials, whose electromagnetic properties are not available in nature, such as negative reflective index, are called metamaterials (MMs). Although many scientists have investigated MMs for negative-reflective-index properties at the beginning, their interests have been extended to many other fields comprising perfect lenses. Among various kinds of MMs, metamaterial absorbers (MM-As) mimic the blackbody through minimizing transmission and reflection. In order to maximize absorption, the real and the imaginary parts of the permittivity and permeability of MM-As should be adjusted to possess the same impedance as that of free space. We propose a dual-wide-band and polarization-independent MM-A. It is basically a triple-layer structure made of metal/dielectric multilayered truncated cones. The multilayered truncated cones are periodically arranged and play a role of meta-atoms. We realize not only a wide-band absorption, which utilizes the fundamental magnetic resonances, but also another wide-band absorption in the high-frequency range based on the third-harmonic resonances, in both simulation and experiment. In simulation, the absorption bands with absorption higher than 90% are 3.93 - 6.05 GHz and 11.64 - 14.55 GHz, while the experimental absorption bands are in 3.88 - 6.08 GHz and 9.95 - 13.84 GHz. The physical origins of these absorption bands are elucidated. Additionally, it is also polarization-independent because of its circularly symmetric structures. Our design is scalable to smaller size for the infrared and the visible ranges.

• Korean Journal of Optics and Photonics
• /
• v.15 no.2
• /
• pp.89-99
• /
• 2004

At the interface of two materials with frequency-dependent material-parameters of permittivity and permeability, there may exist two kinds of surface polaritons: surface electric-polaritons(SEPs) and surface magnetic-polaritons(SMPs). Possible combinations of the material-parameters to support propagation of the two surface polaritons are suggested at the interface between metals and metamaterials such as a left-handed material. Dispersion relations are also derived in order to characterize frequency dependence of propagation of the SEP and SMP. It is found that only one propagation mode of SEP or SMP is allowed at a given set of four material parameters, and that counter-propagation of the phase and group velocities of the propagation mode can be observed even in the case when there are no double negative(or, negative-index) materials. Physical origin of the counter-propagation of the group velocity is proposed by evaluating the ratio of two electromagnetic-energy densities of a surface polariton propagating along within the two interface media, and it is confirmed by the dispersion relations.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.3 s.32
• /
• pp.17-22
• /
• 2004

The microwave dielectric properties of $CaZrO_3$ ceramics with addition of $CaTiO_3$ were studied. The effect of glass addition on the low-temperature sintering and microwave dielectric properties of $CaZrO_3-CaTiO_3$ ceramics were also evaluated to develop the materials for functional substrates of low-temperature co-fired ceramics. When $10-20 wt\%$ of lithium borosilicate glass was added, the sintering temperature of the $CaZrO_3-CaTiO_3$ ceramics decreased from $1450^{\circ}C$ to below $900^{\circ}C$. As the $T_f$ of glass frits and $CaZrO_3$ are slightly negative and that of $CaTiO_3$ is significantly positive, zero $T_f$ could be realized by mixing an appropriate amount of $CaTiO_3$ with $CaZrO_3$. The $CaZrO_3-CaTiO_3$ ceramics sintered at $875^{\circ}C$ with $15wt\%$ glass frits showed the relative density of $98\%$, permittivity of 23, quality factor of 2500 GHz, and temperature coefficient of resonant frequency of $ -3 ppm/^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.7
• /
• pp.796-808
• /
• 2007

In this paper, two novel compact microstrip bandstop filters using complimentary split ring resonators(CSRRs) and spiral resonators is proposed. The first one is the bandstop filter using an array of CSRRs etched on the center line of a microstrip. The bandstop is due to the presence of negative effective permittivity and positive permeability near resonant frequency which prevent the wave propagation. The second on is the bandstop filter using an array of spiral resonators etched on the center line of a microstrip. The bandstop is due to the self-resonance of spiral circuit. We have achieved controllable resonance frequency and bandwidth, super compact dimension, low insertion losses in the passband and high level of rejection in the stopband with sharp cutoff. The electrical sizes of two proposed filter are very small. Additionally, they can be easily fabricated and compatible with MMIC or PCB technology.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.9
• /
• pp.912-918
• /
• 2011

In this paper, a composite right-/left-handed(CRLH) rectangular waveguide satisfying a balanced condition above the cut-off frequency is presented. The proposed structure consists of one shorted stub and two twisted H-plane irises which produce an effectively negative permeability and permittivity, respectively. The CRLH structure can independently control the series and shunt resonance frequencies of a CRLH transmission line which determine the left-handed(LH) and right-handed(RH) bands due to a minimized coupling between a shorted stub and twisted H-plane irises. Thus, the design of the CRLH waveguide satisfying a balanced condition is possible. To analyze the CRLH structure, a crossly connected equivalent circuit is derived. The simulated and measured results confirm that the proposed CRLH waveguide has a transmission property without a band gap among the LH and RH bands.

• Journal of Powder Materials
• /
• v.17 no.4
• /
• pp.289-294
• /
• 2010

For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

• Korean Journal of Materials Research
• /
• v.29 no.3
• /
• pp.155-159
• /
• 2019

Surface plasmon resonance is the resonant oscillation of conduction electrons at the interface between negative and positive permittivity material stimulated by incident light. In particular, when light transmits through the metallic microhole structures, it shows an increased intensity of light. Thus, it is used to increase the efficiency of devices such as LEDs, solar cells, and sensors. There are various methods to make micro-hole structures. In this experiment, micro holes are formed using a wet chemical etching method, which is inexpensive and can be mass processed. The shape of the holes depends on crystal facets, temperature, the concentration of the etchant solution, and etching time. We select a GaAs(100) single crystal wafer in this experiment and satisfactory results are obtained under the ratio of etchant solution with $H_2SO_4:H_2O_2:H_2O=1:5:5$. The morphology of micro holes according to the temperature and time is observed using field emission - scanning electron microscopy (FE-SEM). The etching mechanism at the corners and sidewalls is explained through the configuration of atoms.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.493-493
• /
• 2014

The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.