• The Korean Journal of Ceramics
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• 제2권4호
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• pp.193-196
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• 1996

A new type of electron emitter device of chemical-vapor-deposited diamond thin film is proposed. The device is a diode of metal-insulator-insulator-semiconductor (MIS) structure consisting of an intrinsic polycrystalline diamond film as the insulator, an aluminium electrode on one side, and hydrogenated diamond surface on the other side as the p-type semconductor with negative electron affinity (NEA). Electrons will be injected and/or excited to the conduction band of intrinsic diamond layer to be emitted from the hydrogenated diamond surface of NEA.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.21-23
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• 1997

Dependences of total photoyields on incident photon energies were measured using synchrotron radiation light for different chemical-vapor-deposited diamond with differently treated surface. Results show that a considerable amount of gap states are presented for as-grown specimens with H-terminated, that negative electron affinity (NEA) is realized for H-plasma-treated specimens, and that sufficient O-treatment to NEA specimens results in positive electron affinity. The observed electron affinity can be explained in terms of differences in strength of the surface dipole layer formed by difference in the electron negativity among C, H and O atoms.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.344-348
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• 1999

Diamond like carbon(DLC) thin films possesed not only marvelous material characteristics such as large thermal conductivity, high hardness and being chemically inert, but also possesed negative electron affinity (NEA) properties. The NEA is an extremely desirable property of the material used in microelestronics and vacuum microelestronics device. DLC films were fabricated by pulsed laser deposition(PLD). Theeffect of the laser energy density and the substrate temperature on the properies of DLC films was investigated. The experiment was accomplished at temperatures in the range of room temperature to $600^{\circ}C$. The laser energy density was in the range of 6 $J/cm^2$ to 16 $J/cm^2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.7-8
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• 2010

The surface conductive layer (SCL) of chemical vapor deposition (CVD) diamonds has attracting much interest. However, neither photoemission electron microscopic (PEEM) nor micro-spectroscopic (PEEMS) information is available so far. Since SCL retains in an ultra-high vacuum (UHV) condition, PEEM or PEEMS study will give an insight of SCL, which is the subject of the present study. The sample was made on a Ib-type HTHP diamond (001) substrate by non-doping CVD growthin a DC-plasma deposition chamber. The SCL properties of the sample in air were; a few tens K/Sq. in sheet resistance, ${\sim}180\;cm^2/vs$ in Hall mobility, ${\sim}2{\times}10^{12}/cm^2$ in carrier concentration. The root-square-mean surface roughness (Rq) of the sample was ~0.2nm as checked by AFM. A $2{\times}1$ LEED pattern and a sheet resistance of several hundreds K/Sq. in UHV were checked in a UHV chamber with an in-situ resist-meter [1]. The sample was then installed in a commercial PEEM/S apparatus (Omicron FOCUS IS-PEEM) which was composed of electro-static-lens optics together with an electron energy-analyzer. The presence of SCL was regularly monitored by measuring resistance between two electrodes (colloidal graphite) pasted on the two ends of sample surface. Figure 1 shows two PEEM images of a same area of the sample; a) is excited with a Hg-lamp and b) with a Xe-lamp. The maximum photon energy of the Hg-lamp is ~4.9 eV which is smaller that the band gap energy ($E_G=5.5\;eV$) of diamond and the maximum photon energy of the Xe-lamp is ~6.2 eV which is larger than $E_G$. The image that appear with the Hg-lamp can be due to photo-excitation to unoccupied states of the hydrogen-terminated negative electron affinity (NEA) diamond surface [2]. Secondary electron energy distribution of the white background of Figs.1a) and b) indeed shows that the whole surface is NEA except a large black dot on the upper center. However, Figs.1a) and 1b) show several features that are qualitatively different from each other. Some of the differences are the followings: the two main dark lines A and B in Fig.1b) are not at all obvious and the white lines B and C in Fig.1b) appear to be dark lines in Fig.1a). A PEEMS analysis of secondary electron energy distribution showed that all of the features A-D have negative electron affinity with marginal differences among them. These differences can be attributed to differences in the details of energy band bending underneath the surface present in SCL [3].

• Bulletin of the Korean Chemical Society
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• 제16권11호
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• pp.1015-1019
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• 1995

The electronic structures and properties of the neutral and multiply charged C60n ions (n=2+ to 6-) with spin states have been investigated by semi-empirical MNDO calculations. In the ground state, C601- has the lowest total energy and the highest binding energy. The neutral C60 ion is supposed to have a high ionization potential and a high electron affinity. The HOMO and LUMO positions are lower in the cationic C60 than in the anionic C60. The LUMO energy becomes increasingly positive from C601- to C606- and the HOMO energy becomes increasingly negative from C602+ to C60. The HOMO-LUMO gap of the neutral C60 ion is higher than that of the multiply charged C60 ions. From the HOMO-LUMO gap, it seems reasonable to expect that electrons of the multiply charged C60 ions will be more polarizable than those of the neutral C60 ion. The HOMO and LUMO energies increase as the negative charge increases.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1244_1245
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• 2009

Coating of amorphous nitride thin layers, such as boron nitride (BN) and carbon nitride (CN), has been performed on carbon nanotubes (CNTs) for the purpose of enhancing their electron-emission performances because those nitride films have relatively low work functions and commonly exhibit negative electron affinity behavior. The CNTs were directly grown on metal-tip (tungsten, approximately 500 nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). Sharpening of the tungsten tips were carried out by electrochemical etching. Morphologies and microstructures of BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM), energy dispersive x-ray (EDX) spectroscopy, and Raman spectroscopy. The electron-emission properties (such as maximum emission currents and turn-on fields) of the BN-coated and CN-coated CNT-emitters were characterized in terms of the thickness of BN and CN layers.

• BMB Reports
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• 제29권4호
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• pp.300-307
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• 1996

ATP and ADP are potential regulators of mitochondtial respiration and at physiological concentrations they affect the rate of electron transfer between cytochrome c and cytochrome c oxidase. The electron transfer, however, depends on the electrostatic interaction between the two proteins. In order to exclude any nonspecific ionic effects by these polyvalent nucleotides, we used 2'-O-(2,4,6)trinitro(TNP)-derivatives of ATP and ADP which have three orders of magnitude higher affinity for cytochrome c oxidase. A simple titration of the fluorescence intensity of TNP by cytochrome c oxidase showed a binding stoichiometry of 2:1 cytochrome c:cytochrome c oxidase. Higher ionic strength was required for TNP-ATP than for TNP-ADP to be dissociated from cytochrome c oxidase, indicating that the negative charges on the phosphate group are at least partially responsible for the binding. In both spectrophotometric and polarographic assays, addition of ATP (and ADP to a less extent) showed an enhanced cytochrome c oxidase activity. Both electron paramagnetic resonance and fluorescence spectra indicate that there is no Significant change in the cytochrome c-cytochrome c oxidase interaction. Instead, reduction levels of the cytochromes at steadystate suggest that the increased activity of nucleotide-bound cytochrome c oxidase is due to faster electron transfer from cytochrome ${\alpha}$ to cytochrome ${\alpha}_3$, which is known to be the fate limiting step in the oxygen reduction by cytochrome c oxidase.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권2호
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• 전기학회논문지
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• 제59권4호
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• pp.743-748
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• 2010

Boron nitride (BN) and carbon nitride (CN) films, which have relatively low work functions and commonly exhibit negative electron affinity behaviors, were coated on carbon nanotubes (CNTs) by magnetron sputtering. The CNTs were directly grown on metal-tip (tungsten, approximately 500nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The variations in the morphology and microstructure of CNTs due to coating of the BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM). The energy dispersive x-ray (EDX) spectroscopy and Raman spectroscopy were used to identify the existence of the coated layers (CN and BN) on CNTs. The electron-emission properties of the BN-coated and CN-coated CNT-emitters were characterized using a high-vacuum field emission measurement system, in terms of their maximum emission currents ($I_{max}$) at 1kV and turn-on voltage ($V_{on}$) for approaching $1{\mu}A$. The results showed that the $I_{max}$ current was significantly increased and the $V_{on}$ voltage were remarkably reduced by the coating of CN or BN films. The measured values of $I_{max}-V_{on}$ were as follows; $176{\mu}A$-500V for the 5nm CN-coated emitter and $289{\mu}A$-540V for the 2nm BN-coated emitter, respectively, while the $I_{max}-V_{on}$ of the as-grown (i.e., uncoated) emitter was $134{\mu}A$-620V. In addition, the CNT emitters coated with thin CN or BN films also showed much better long-term (up to 25h) stability behaviors in electron emission, as compared with the conventional CNT emitter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1511-1513
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• 1999

In order to investigate the properties of diamond-like carbon(DLC) thin films depending on the deposition parameters, DLC thin films were systematically fabricated by pulsed laser deposition (PLD), DLC thin films have been shown advantageous field emission properties due to a negative electron affinity (NEA) and a low work function. At the atomic level. DLC is referred to the group of carbon materials with strong chemical bonding composition of $sp^2$ and $sp^3$ arrangements of atoms incorporated with an amorphous structure. The experiment was performed at substrate temperature in the range of room temperature to $600^{\circ}C$. The laser energy densiy was used to be in the range of $6J/cm^2$ to $20J/cm^2$, SEM, Raman, PL, XPS and field emission characteristics were used to investigate the DLC thin films.