Abstract
Dependences of total photoyields on incident photon energies were measured using synchrotron radiation light for different chemical-vapor-deposited diamond with differently treated surface. Results show that a considerable amount of gap states are presented for as-grown specimens with H-terminated, that negative electron affinity (NEA) is realized for H-plasma-treated specimens, and that sufficient O-treatment to NEA specimens results in positive electron affinity. The observed electron affinity can be explained in terms of differences in strength of the surface dipole layer formed by difference in the electron negativity among C, H and O atoms.