• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.152-153
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• 2007

$CuInSe_2$ single crystal thin film was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Cu}$, $V_{Se}$, $Cu_{lnt}$, and $Se_{lnt}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Radiology
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• v.21 no.12
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• pp.1294-1304
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• 2020

Objective: To determine whether T1 mapping could monitor the dynamic changes of injury in myocardial infarction (MI) and be histologically validated. Materials and Methods: In 22 pigs, MI was induced by ligating the left anterior descending artery and they underwent serial cardiovascular magnetic resonance examinations with modified Look-Locker inversion T1 mapping and extracellular volume (ECV) computation in acute (within 24 hours, n = 22), subacute (7 days, n = 13), and chronic (3 months, n = 7) phases of MI. Masson's trichrome staining was performed for histological ECV calculation. Myocardial native T1 and ECV were obtained by region of interest measurement in infarcted, peri-infarct, and remote myocardium. Results: Native T1 and ECV in peri-infarct myocardium differed from remote myocardium in acute (1181 ± 62 ms vs. 1113 ± 64 ms, p = 0.002; 24 ± 4% vs. 19 ± 4%, p = 0.031) and subacute phases (1264 ± 41 ms vs. 1171 ± 56 ms, p < 0.001; 27 ± 4% vs. 22 ± 2%, p = 0.009) but not in chronic phase (1157 ± 57 ms vs. 1120 ± 54 ms, p = 0.934; 23 ± 2% vs. 20 ± 1%, p = 0.109). From acute to chronic MI, infarcted native T1 peaked in subacute phase (1275 ± 63 ms vs. 1637 ± 123 ms vs. 1471 ± 98 ms, p < 0.001), while ECV progressively increased with time (35 ± 7% vs. 46 ± 6% vs. 52 ± 4%, p < 0.001). Native T1 correlated well with histological findings (R² = 0.65 to 0.89, all p < 0.001) so did ECV (R² = 0.73 to 0.94, all p < 0.001). Conclusion: T1 mapping allows the quantitative assessment of injury in MI and the noninvasive monitoring of tissue injury evolution, which correlates well with histological findings.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.823-827
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• 2001

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of Eg(T)=2.1365 eV-(9.89${\times}$10$\^$-3/ eV)T$^2$/(2930+T). After the as-grown AgInS$_2$/GaAs was annealed in Ag-,S-, and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of V$\_$Ag/, V$\_$s/, Ag$\_$int/, and S$\_$int/ obtained from PL measurement were classified to donors or acceptors type. And, we concluded that the heat-treatment in the S-atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did net from the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.196-201
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• 2002

The $AgInS_{2}$ epilayers with a chalcopyrite structure grown using a hot-wall epitaxy method have been confirmed to be a high quality crystal. From the optical absorption measurements, a temperature dependence of the energy band gap on $AgInS_{2}/GaAs$ was found to be $Eg(T)=2.1365eV-(9.89{\times}10^{-3}eV)T^{2}/(2930+T)$. After the as-grown $AgInS_{2}/GaAs$ was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of $AgInS_{2}/GaAs$ has been investigated by using photoluminescence measurements at 10 K. The native defects of $V_{Ag},\;V_{S},\;Ag_{int}$ and $S_{int}$ obtained from photoluminescence measurements were classified as donors or accepters. It was concluded that the heat-treatment in the S-atmosphere converted $AgInS_{2}/GaAs$ to an optical p-type. Also, it was confirmed that In in $AgInS_{2}/GaAs$ did not form the native defects because In in $AgInS_{2}$ did exist in the stable form.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.50-54
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• 2004

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of E$\_$g/(T) = 2.1365 eV - (9.89${\times}$10$\^$－3/ eV/K) T$^2$/(2930＋T eV). After the as-grown AgInS$_2$/GaAs was annealed in Ag－, S－. and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or accepters type. And, we concluded that the heat-treatment in the S- atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did not form the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.170.1-170.1
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• 2016

$Bi_2Te_3$ has long been studied for its excellent thermoelectric characteristics. Recently, this material has been known as a topological insulator (TI). The surface states within the bulk band gap of a TI, which are protected by the time reversal symmetry, contribute to the conduction at the surface, while the bulk is in insulating state. In contrast to the bulk defects tuning the chemical potential to the Dirac energy, the native defects near the surface are expected not to change the shape of the Fermi surface and the related spin structure. Using scanning tunneling microscopy (STM), we have systematically characterized surface or near surface defects in p- and n- doped $Bi_2Te_3$, and identified their structure by first principles calculations. In addition, bias-polarity dependences of STM images revealed the electron donor/acceptor nature of each defect. A detailed theoretical study of the surface states near the Dirac energy reveals the robustness of the Dirac point, which verifies the effectiveness of the disturbance on the backscattering from various kinds of defects.

• Asian-Australasian Journal of Animal Sciences
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• v.31 no.8
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• pp.1160-1168
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• 2018

Objective: This study was conducted to compare morphological defects, viability, motility (MOT), fertility (F), and hatchability (H) in four Korean native chicken breeds (KNCBs), and to evaluate whether defective segments of spermatozoa are associated with MOT, F, and H. Methods: Four KNCBs, including Korean Ogye (KO), Hwangbong (HB), Hyunin Black (HH), and Hoengseong Yakdak (HY) were used. White Leghorn (WL) was used as a control. Nine cocks from each breed were randomly assigned into three groups. Semen was collected by abdominal massage method. Eosin-nigrosin staining method was used to identify live-dead spermatozoa. Different segments and specific morphological defects of spermatozoa were identified using 4', 6-diamidino-2-phenylidole and MitoTracker Red CMXRos. F and H rates were evaluated following artificial insemination (AI). Results: KO had the highest MOT rate compared to HY. Viable normal sperm rates of KO and HH were high and comparable with WL. HY spermatozoa had the highest viable abnormal sperm (VAS) or morphological defect rate followed by HB. Likewise, HB spermatozoa had the highest dead sperm (dead) rate compared to KO, HY, and WL. Bent, coiled, detached, broken, and knotted were common identified specific morphological defects for all breeds. Most morphological defects were at the head and tail in all breeds. VAS showed strong negative correlation with MOT (r = -0.697) and F (r = -0.609). Similarly, defective tail was negatively correlated with MOT (r = -0.587), F (r = -0.797), and H (r = -0.448). The F and H rates of KO and WL were comparable. Conclusion: These data indicate that most identified specific morphological defects are at the head and tail. VAS and defective tail were associated with poor motility, F, and H. KNCBs showed more morphological defects than WL. Finally, these results will facilitate successful AI and semen cryopreservation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.120-121
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• 2009

Single crystalline $ZnIn_2Se_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating, $ZnIn_2Se_4$ source at $630^{\circ}C$. After the as-grown $ZnIn_2Se_4$ single crystalline thin films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of $ZnIn_2Se_4$single crystalline thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $ZnIn_2Se_4$ single crystalline thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2Se_4$/GaAs did not form the native defects because In in $ZnIn_2Se_4$ single crystalline thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.293-300
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• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.100-101
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• 2008

To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $Cu_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.