• 제목/요약/키워드: nanowires

검색결과 738건 처리시간 0.03초

ZnO-나노와이어/PVDF 복합체를 압전 활성층으로 한 나노발전기 소자 (Nanogenerator Device Based on Piezoelectric Active Layer of ZnO-Nanowires/PVDF Composite)

  • 임영택;신백균
    • 한국전기전자재료학회논문지
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    • 제27권11호
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    • pp.740-745
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    • 2014
  • ZnO nanowires were grown by hydrothermal synthesis process and piezoelectric poly vinylidene fluoride (PVDF) was then coated on top of the ZnO-nanowires by spray-coating technique. The composite layer of ZnO-nanowires/PVDF was applied to an energy harvesting device based on piezoelectric-conversion mechanism. A defined mechanical force was given to the nanogenerator device to evaluate their electric power generation characteristics, where output current density and voltage were examined. Electric power generation property of the ZnO-nanowires/PVDF based nanogenerator device was compared to that of the nanogenerator device with ZnO-nanowires as single active layer. Effect of the ZnO-nanowires on improvement of power generation was discussed to examine its feasibility for the nanogenerator device.

Controllability of Threshold Voltage of ZnO Nanowire Field Effect Transistors by Manipulating Nanowire Diameter by Varying the Catalyst Thickness

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제14권3호
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    • pp.156-159
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    • 2013
  • The electrical properties of ZnO nanowire field effect transistors (FETs) have been investigated depending on various diameters of nanowires. The ZnO nanowires were synthesized with an Au catalyst on c-plane $Al_2O_3$ substrates using hot-walled pulsed laser deposition (HW-PLD). The nanowire FETs are fabricated by conventional photo-lithography. The diameter of ZnO nanowires is simply controlled by changing the thickness of the Au catalyst metal, which is confirmed by FE-SEM. It has been clearly observed that the ZnO nanowires showed different diameters simply depending on the thickness of the Au catalyst. As the diameter of ZnO nanowires increased, the threshold voltage of ZnO nanowires shifted to the negative direction systematically. The results are attributed to the difference of conductive layer in the nanowires with different diameters of nanowires, which is simply controlled by changing the catalyst thickness. The results show the possibility for the simple method of the fabrication of nanowire logic circuits using enhanced and depleted mode.

Self Growth of Silica Nanowires on a Si/SiO2 Substrate

  • Jeong, Hann-Ah;Seong, Han-Kyu;Choi, Heon-Jin
    • 한국세라믹학회지
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    • 제45권3호
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    • pp.142-145
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    • 2008
  • The growth of amorphous silica nanowires by on-site feeding of silicon and oxygen is reported. The nanowires were grown on a nickel-coated oxidized silicon substrate without external silicon or oxygen sources. Transmission electron microscopy observation revealed that the nanowires, which have diameters of less than 50 nm and a length of several micrometers, were grown using a traditional vapor-liquid-solid mechanism. Blue photoluminescence was observed from these nanowires at room temperature. An approach to grow nanowires without external precursors may be useful when integrating nanowires into devices structures. This can benefit the fabrication of nanowire-based nanodevices.

유전영동을 이용하는 니켈 나노와이어 희석기 (A Nickel Nanowire Diluter Operating through the Principle of the Dielectrophoretic Attraction Force)

  • 양진호;윤현중;양의혁;양상식
    • 전기학회논문지
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    • 제59권2호
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    • pp.385-389
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    • 2010
  • This paper presents a microfabricated nanowire diluter which dilutes the concentration of nanowires in solution instead of by the conventional centrifuge process. The device has 16 pairs of gold electrodes in a micro channel composed of a glass substrate and PDMS. We prepared nickel nanowires by the template-directed electrodeposition method using nanoporous anodized aluminum template (AAO). We injected the Dimethylformamide (DMF) solution containing nanowires into the inlet of the diluter while applying square wave voltages on the electrodes to trap the nanowires at the subsequent gold electrodes by means of dielectrophoretic attraction forces. The concentration of nanowires at the outlet of the micro channel was changed as we expected, which illustrates that the device can effectively dilute nanowires and can be applied to a controlled assembly of nanowires.

ZnO 반도체 나노선의 패턴 성장 및 전계방출 특성 (Patterned Growth of ZnO Semiconducting Nanowires and its Field Emission Properties)

  • 이용구;박재환;최영진;박재관
    • 한국세라믹학회지
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    • 제47권6호
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    • pp.623-626
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    • 2010
  • We synthesized ZnO nanowires patterned on Si substrate and investigated the field emission properties of the nanowires. Firstly, Au catalyst layers were fabricated on Si substrate by photo-lithography and lift-off process. The diameter of Au pattern was $50\;{\mu}m$ and the pattern was arrayed as $4{\times}4$. ZnO nanowires were grown on the Au catalyst pattern by the aid of Au liquid phase. The orientation of the ZnO nanowires was vertical on the whole. Sufficient brightness was obtained when the electric field was $5.4\;V/{\mu}m$ and the emission current was $5\;mA/cm^2$. The threshold electric field was $5.4\;V/{\mu}m$ in the $4{\times}4$ array of ZnO nanowires, which is quite lower than that of the nanowires grown on the flat Si substrate. The lower threshold electric field of the patterned ZnO nanowires could be attributed to their vertical orientation of the ZnO nanowires.

Growth Characteristics of Amorphous Silicon Oxide Nanowires Synthesized via Annealing of Ni/SiO2/Si Substrates

  • Cho, Kwon-Koo;Ha, Jong-Keun;Kim, Ki-Won;Ryu, Kwang-Sun;Kim, Hye-Sung
    • Bulletin of the Korean Chemical Society
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    • 제32권12호
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    • pp.4371-4376
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    • 2011
  • In this work, we investigate the growth behavior of silicon oxide nanowires via a solid-liquid-solid process. Silicon oxide nanowires were synthesized at $1000^{\circ}C$ in an Ar and $H_2$ mixed gas. A pre-oxidized silicon wafer and a nickel film are used as the substrate and catalyst, respectively. We propose two distinctive growth modes for the silicon oxide nanowires that both act as a unique solid-liquid-solid growth process. We named the two growth mechanisms "grounded-growth" and "branched-growth" modes to characterize their unique solid-liquid-solid growth behavior. The two growth modes were classified by the generation site of the nanowires. The grounded-growth mode in which the grown nanowires are generated from the substrate and the branchedgrowth mode where the nanowires are grown from the side of the previously grown nanowires or at the metal catalyst drop attached at the tip of the nanowire stem.

Au 나노입자가 코팅된 TiO2 나노와이어의 에탄올가스 검출 특성 (Ethanol Sensing Properties of TiO2 Nanowires Sensor Decorated with Au Nanoparticles)

  • 강우승
    • 한국표면공학회지
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    • 제48권5호
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    • pp.238-244
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    • 2015
  • $TiO_2$ nanowires were synthesized by hydrothermal method for the application to ethanol gas sensor. $TiO_2$ nanowires were decorated with Au nanoparticles to improve the sensitivity to ethanol gas. Scanning electron microscopy and Transmission electron microscopy revealed that the synthesized nanowires had diameters and lengths of approximately 100 - 200 nm and a few micrometers, respectively. Size of the Au nanoparticles decorated on the $TiO_2$ nanowires was observed to be in the range of 10 - 20 nm. X-ray diffraction confirmed that the decorated nanowires were composed of anatase-, rutile-$TiO_2$, and Au. The sensitivities of $TiO_2$ nanowires sensors decorated with Au were approximately 1.1 - 3.65 times as high as those of as-synthesized $TiO_2$ sensors for the ethanol concentration of 5 - 100 ppm at $200^{\circ}C$. The mechanism of the improved ethanol gas sensing of the $TiO_2$ nanowires decorated with Au nanoparticles is discussed.

압전 산화아연 나노와이어의 동적거동 및 압전소자 응용성 (Finite Element Analyses on the Dynamic Behavior of Piezoelectric ZnO Nanowires and Their Piezoelectric Device Application Potentials)

  • 이웅
    • 한국재료학회지
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    • 제31권1호
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    • pp.43-53
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    • 2021
  • Dynamic behavior of piezoelectric ZnO nanowires is investigated using finite element analyses (FEA) on FE models constructed based on previous experimental observations in which nanowires having aspect ratios of 1:2. 1:31, and 1:57 are obtained during a hydrothermal process. Modal analyses predict that nanowires will vibrate in lateral bending, uniaxial elongation/contraction, and twisting (torsion), respectively, for the three ratios. The natural frequency for each vibration mode varies depending on the aspect ratio, while the frequencies are in a range of 7.233 MHz to 3.393 GHz. Subsequent transient response analysis predicts that the nanowires will behave quasi-statically within the load frequency range below 10 MHz, implying that the ZnO nanowires have application potentials as structural members of electromechanical systems including nano piezoelectric generators and piezoelectric dynamic strain sensors. When an electric pulse signal is simulated, it is predicted that the nanowires will deform in accordance with the electric signal. Once the electric signal is removed, the nanowires exhibit a specific resonance-like vibration, with the frequency synchronized to the signal frequency. These predictions indicate that the nanowires have additional application potential as piezoelectric actuators and resonators.

액상에서 성장한 ZnO 나노와이어의 전계방출 특성연구 (Field emission characteristics of ZnO nanowires grown at liquid phase)

  • 노임준;김성현;조진우;박구범;김용혁;이덕출;신백균
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1347_1348
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    • 2009
  • We fabricated FEDs based on ZnO nanowires. ZnO nanowires were synthesized on Au thin films by hydrothermal method on hot plate. After 2 hours, we obtained nanowires of chin form. The high-purity nanowires showed sharp tips geometry with a wurtzite structure. The field emission properties of the ZnO nanowires were investigated in high vacuum chamber. The turn-on field for the ZnO nanowires was found to be about 4.1 V/${\mu}m$ at a current density of $0.1{\mu}A/cm^2$.

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RF-Sputtering 법에 의한 SiC 나노와이어의 특성연구 (A Characteristic study of SiC Nanowires by RF-Sputtering)

  • 정창구;김태규
    • 열처리공학회지
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    • 제23권6호
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    • pp.344-349
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    • 2010
  • Silicon carbide nanowires were grown by heat treatment of the films at $1200^{\circ}C$ after amorphous SiC thin films were deposited on graphite substrate by radio frequency magnetron sputtering at $600^{\circ}C$. It was confirmed that SiC nanowires with the diameter of 20-60 nm and length of about 50nm were grown from Field Emission Scanning Election Microscope (FE-SEM) and Transmission Election Microscope (TEM) observation. The diameter of nanowires was increased as heat treatment time is increased. The nanowires were identified to ${\beta}$-SiC single crystalline from X-Ray Diffraction(XRD) analysis. It was observed from this study that deposition temperature of samples was critical to the crystallization of nanowires. On the other hand, the effect of deposition time was insignificant.