• Smart Structures and Systems
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• v.19 no.2
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• pp.115-126
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• 2017

In this paper, size dependent bending and free flexural vibration behaviors of functionally graded (FG) nanobeams are investigated using a nonlocal quasi-3D theory in which both shear deformation and thickness stretching effects are introduced. The nonlocal elastic behavior is described by the differential constitutive model of Eringen, which enables the present model to become effective in the analysis and design of nanostructures. The present theory incorporates the length scale parameter (nonlocal parameter) which can capture the small scale effect, and furthermore accounts for both shear deformation and thickness stretching effects by virtue of a hyperbolic variation of all displacements through the thickness without using shear correction factor. The material properties of FG nanobeams are assumed to vary through the thickness according to a power law. The neutral surface position for such FG nanobeams is determined and the present theory based on exact neutral surface position is employed here. The governing equations are derived using the principal of minimum total potential energy. The effects of nonlocal parameter, aspect ratio and various material compositions on the static and dynamic responses of the FG nanobeam are discussed in detail. A detailed numerical study is carried out to examine the effect of material gradient index, the nonlocal parameter, the beam aspect ratio on the global response of the FG nanobeam. These findings are important in mechanical design considerations of devices that use carbon nanotubes.

• Advances in nano research
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• v.9 no.1
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• pp.1-13
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• 2020

In this work, the electrical potential (EP) technique with an artificial neural networks (ANNs) for monitoring of nanostructures are used for the first time. This study employs an expert system to identify size and localize hidden nano-delamination (N.Del) inside layers of nano-pipe (N.P) manufactured from Basalt Fiber Reinforced Polymer (BFRP) laminate composite by using low-cost monitoring method of electrical potential (EP) technique with an artificial neural networks (ANNs), which are combined to decrease detection effort to discern N.Del location/size inside the N.P layers, with high accuracy, simple and low-cost. The dielectric properties of the N.P material are measured before and after N.Del introduced using arrays of electrical contacts and the variation in capacitance values, capacitance change and node potential distribution are analyzed. Using these changes in electrical potential due to N.Del, a finite element (FE) simulation model for N.Del location/size detection is generated by ANSYS and MATLAB, which are combined to simulate sensor characteristic, therefore, FE analyses are employed to make sets of data for the learning of the ANNs. The method is applied for the N.Del monitoring, to minimize the number of FE analysis in order to keep the cost and save the time of the assessment to a minimum. The FE results are in excellent agreement with an ANN and the experimental results available in the literature, thus validating the accuracy and reliability of the proposed technique.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.61.1-61.1
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• 2015

Nanoscale semiconductor plasma processing has become one of the most challenging issues due to the limits of physicochemical fabrication routes with its inherent complexity. The mission of future and emerging plasma processing for development of next generation semiconductor processing is to achieve the ideal nanostructures without abnormal profiles and damages, such as 3D NAND cell array with ultra-high aspect ratio, cylinder capacitors, shallow trench isolation, and 3D logic devices. In spite of significant contributions of research frontiers, these processes are still unveiled due to their inherent complexity of physicochemical behaviors, and gaps in academic research prevent their predictable simulation. To overcome these issues, a Korean plasma consortium began in 2009 with the principal aim to develop a realistic and ultrafast 3D topography simulator of semiconductor plasma processing coupled with zero-D bulk plasma models. In this work, aspects of this computational tool are introduced. The simulator was composed of a multiple 3D level-set based moving algorithm, zero-D bulk plasma module including pulsed plasma processing, a 3D ballistic transport module, and a surface reaction module. The main rate coefficients in bulk and surface reaction models were extracted by molecular simulations or fitting experimental data from several diagnostic tools in an inductively coupled fluorocarbon plasma system. Furthermore, it is well known that realistic ballistic transport is a simulation bottleneck due to the brute-force computation required. In this work, effective parallel computing using graphics processing units was applied to improve the computational performance drastically, so that computer-aided design of these processes is possible due to drastically reduced computational time. Finally, it is demonstrated that 3D feature profile simulations coupled with bulk plasma models can lead to better understanding of abnormal behaviors, such as necking, bowing, etch stops and twisting during high aspect ratio contact hole etch.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.39-45
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• 2004

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. A 5${\times}$5${\times}$0.09 in. quartz stamp is fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. FAS(Fluoroalkanesilane) is used as a material for anti-adhesion surface treatment on the stamp and a thin organic film to improve adhesion on a wafer is formed by spin-coating. The low viscosity resin droplets with a nanometer scale volume are dispensed on the whole area of the coated wafer. The UV-NIL experiments have been performed using the EVG620-NIL. 370 nm - 1 m features on the stamp have been transferred to the thin resin layer on the wafer using the multi-dispensing method and UV-NIL process. We have measured the imprinted patterns and residual layer using SEM and AFM to evaluate the potential of the process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1507-1510
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• 2005

This study was carried out as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-\mu{m}-deep$ indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.49 GPa and 100 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46-0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined area during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.277-284
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• 2013

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under thermal chemical vapor deposition system. The Ni layer on the $SiO_2$ substrate was used as a catalyst for the formation of the carbon coils. The characteristics (formation densities, morphologies, and geometries) of the as-grown carbon coils on the substrate with or without the $H_2$ plasma pretreatment process were investigated. By the relatively short time (1 minute) $H_2$ plasma pretreatment on the Ni catalyst layered-substrate prior to the carbon coils synthesis reaction, the dominant formation of the carbon microcoils on the substrate could be achieved. After the relatively long time (30 minutes) $H_2$ plasma pretreatment process, on the other hand, we could obtain the noble-shaped geometrical nanostructures, namely the formation of the numerous carbon nanocoils along the growth of the carbon microcoils. This noble-shaped geometrical nanostructure seemed to play a promising role as the good catalyst support for holding the very tiny Ni catalyst grains.

• Membrane Journal
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• v.26 no.6
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• pp.421-431
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• 2016

Novel membrane technologies that harness ordered nanostructures have recently received much attention because they allow for high permeability due to their reduced flow resistance while also maintaining high selectivity due to their isoporous characteristics. In particular, the opaline structure (made from the self-assembly of colloidal particles) and its inverted form (inverse-opal) have shown strong potential for membrane applications on account of several advantages in processing and the resulting membrane properties. These include controllability over the pore size and surface functional moieties, which enable a wide range of applications ranging from size-exclusive separation to catalytically-reactive membranes. Furthermore, when combined with multiscale architecturing strategies, inverse-opal-structured membranes can be designed to have specific pores or channel structures. These materials are anticipated to be utilized for next-generation, high-performance, and high-value-added functional membranes. In this review article, various types of inverse-opal-structured membranes are reviewed and their functionalization through hierarchical structuring will be comprehensively investigated and discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.27.1-27.1
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• 2011

The recent extensive research of one-dimensional (1D) nanostructures such as nanowires (NWs) and nanotubes (NTs) has been the driving force to fabricate new kinds of nanoscale devices in electronics, optics and bioengineering. We attempt to produce silicon oxide nanowires (SiOxNWs) in a simple way without complicate deposition process, gaseous Si containing precursors, or starting material of $SiO_2$. Nickel (Ni) nanoparticles (NPs) were applied on Si wafer and thermally treated in a furnace. The temperature in the furnace was kept in the ranges between 900 and $1,100^{\circ}C$ and a mixture of nitrogen ($N_2$) and hydrogen ($H_2$) flowed through the furnace. The SiOxNWs had widths ranging from 100 to 200 nm with length extending up to ~10 ${\mu}m$ and their structure was amorphous. Ni NPs were acted as catalysts. Since there were no other Si materials introduced into the furnace, the Si wafer was the only Si sources for the growth of SiOxNWs. When the Si wafer with deposition of Ni NPs was heated, the liquid Ni-Si alloy droplets were formed. The droplets as the nucleation sites induce an initiation of the growth of SiOxNWs and absorb oxygen easily. As the droplets became supersaturated, the SiOxNWs were grown, by the reaction between Si and O and continuously dissolving Si and O onto NPs. Photoluminescence (PL) showed that blue emission spectrum was centered at the wavelength of 450 nm (2.76 eV). The details of growth mechanism of SiOxNWs and the effect of Ni NPs on the formation of SiOxNWs will be presented.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.25.2-25.2
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• 2011

Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.