• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.33.2-33.2
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• 2008

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.1937-1941
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• 2007

During a process of a nanoimprint for manufacturing LCD, a small temperature variation on the LCD glass can cause thermal stress and generate unexpected displacement. To avoid this trouble, a precision temperature control unit using thermoelectric modules is appropriate for nanoimprint processes. The unit consists of an air control system, a cooling water control system, and a power control system. The air control system includes a thermoelectric module, thermocouples measuring temperatures of air and a duct-stale fin, and two air fans. The heat generated by the thermoelectric module is absorbed by the cooling water control system. The power control system catches the temperature of the thermoelectric module, and a PID controller with SCR controls the input power of the thermoelectric module. Temperature control performance is evaluated by experiment and simulation. The temperature control unit is able to control the exit temperature about ${\pm}2^{\circ}C$ from the incoming fluid temperature, and the error range is ${\pm}0.1^{\circ}C$. However, the control time is approximately 30minute, which needs further study of active control

• Journal of the Microelectronics and Packaging Society
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• v.25 no.1
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• pp.11-15
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• 2018

In this study, we deposited silver nanoparticles on the nanocone array structure which was fabricated by the UV nanoimprint process for optical signal amplification. The deposition of the silver nanoparticles was based on the evaporation behavior of the solution droplet according to wettability of surface and the deposition pattern changed from the center of the droplet to the edge depending on the difference of thermal energy. The optical property of silver nanoparticles that were deposited on imprinted nanohole patterns was simulated by the Finite difference time domain (FDTD) analysis method, and it was confirmed that energy was concentrated around the silver nanoparticle of the finally fabricated structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.233-233
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• 2015

We report on a simple method for inducing physical and chemical property-gradient on nanoimprinted patterns by intensity-regulated plasma treatment under caved sample stage. As for the size gradient, a line pattern having a linewidth of 294.9 nm was etched to have gradually varying width from 277.4 nm to 147.9 nm. Modified pattern was proven to be adaptable to replica stamp for reversal patterning. To investigate the wettability gradient, imprinted nanopatterns were coated with fluoroalkylsilane to increase the hydrophobicity, and the surface was modified to have gradually varying wettability from hydrophobic to hydrophilic (contact angle was ${\sim}160^{\circ}$ to ${\sim}5^{\circ}$ on a single chip). This method is expected to be applicable to the selective adsorption of biological entities and hydrodynamic manipulation of liquid droplets for the pumpless microfluidics.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.109-112
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.6
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• pp.756-760
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• 2011

This paper proposed an alignment stage driven by piezo actuators for alignment process of a contact-type lithography. Among contact-type lithography processes, an UV-curable nanoimprint process is an unique process to be able to align patterns on upper and lower layers. An alignment stage of the UV-curable nanoimprint process requires nano-level resolution as well as high stiffness to overcome friction force due to contact moving. In this paper, the alignment stage consists of a compliant mechanism using flexure hinges, piezo actuators for high force generation, and capacitive sensors for high-resolution measurement. The compliant mechanism is implemented by four prismatic-prismatic compliant chains for two degree-of-freedom translations. The compliant mechanism is composed of flexure hinges with high stiffness, and it is directly actuated by the piezo actuators which increases the stiffness of the mechanism, also. The performance of the ultra-precision stage is demonstrated by experiments.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1939-1943
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• 2008

Deformation of a mold is measured and analyzed in alignment and curing processes of UV-Imprint Lithography. We are focused on mold deformation caused by a UV resin, which is laminated between a mold and a target glass-panel. The UV resin is viscous in case of liquid state, and the resin will be solidified when being exposed by the ultra-violet light. The viscosity of the resin causes shear force on the mold during the alignment process. Moreover, the shrinkage during phase change from liquid to solid may cause residual stress on the mold. The experiments for measuring temperature and strain are made during alignment and curing process. Strain-gages and thermocouples are used for measuring the strain and variation of temperature on several points of the mold, respectively. The deformation of mold is also simulated and analyzed. The simulation results are compared with the experiments. Finally, sources of alignment errors in large area UV-nanoimprint lithography are discussed.

• Korean Journal of Materials Research
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• v.26 no.11
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• pp.635-643
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• 2016

Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.155-156
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• 2006

UV-NIL is a promising technology for the fabrication of sub-100 nm features. Due to non-uniformity of the residual layer thickness (RLT) and a strong possibility of defects, many UV-NIL processes have been developed and some are commercially available at present, most are based on the 'step-and-repeat' nanoimprint technique, which employs a small-area stamp, much smaller than the substrate. This is mainly because, when a large-area stamp is used, it is difficult to obtain acceptable uniform residual layer thickness and/or to avoid defects such as air entrapment. As an attempt to enable UV_NIL with a large-area stamp for high throughput, we propose a new UV-NIL tool that is able to imprint 4 inch wafer in a low vacuum environment at a single step.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.145-146
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.