• Journal of Sensor Science and Technology
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• v.19 no.5
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• pp.337-341
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• 2010

In this work, the nanocrystalline ZnO/polycrystalline(poly) aluminum nitride(AlN)/ Si-layered structure was fabricated for humidity sensor applications based on surface acoustic wave(SAW). The ZnO film was used as a sensitive material layer. The ZnO and AlN(0002) were deposited by a sol-gel process and a pulse reactive magnetron sputtering, respectively. The ZnO sensitive films coated on AlN have a hexagonal wurtzite structure after the thin films annealed at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. The surface of the film exhibits sponginess and a nanometer particle size(below 50 nm). The largest shift in the frequency response was at approximately 200 kHz(the relative humidity: 10 %~90 %) for the structure annealed at $400^{\circ}C$. The effect of the change in the environmental temperature on the frequency response of the SAW humidity sensor was also investigated.

• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.59-64
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• 2004

We investigated the soft magnetic properties of nanocrystalline Fe-Al-O film as etching the oxide film with ion beam etching method. It is thought that the grain size of Fe-Al-O film increases as the thickness decreases. The coercivity and squareness increase with decreasing thickness. The surface curvature of Am images increases when the etching experiment proceeds. This phenomena could be due to the grain growth which occurs during sputtering. This grain growth could be assisted by the the plasma energy during sputtering. Therefore proper thickness should be searched to acquire the good soft magnetic properties for the nanocrystalline film material. Good soft magnetic properties of Fe-Al-O film was acquired at the thickness of more than 900 nm.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.25.1-25.1
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.473-479
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• 2000

The nanocrystalline Fe$_{84}$Zr$_{7}$B$_{6}$Cu$_{1}$ $Al_{2}$ alloy was annealed at 450 $^{\circ}C$ and 550 $^{\circ}C$ for l hour to achieve the ultra-soft magnetic properties such as large magnetoimpedence ratio(MIR), the incremental permeability ratio(PR), nearly zero coercivity, zero magnetostriction, etc. The PR and MIR of the sample were measured from 100 kHz to 10 MHz at a cryogenic chamber where the temperature can be varie from 10 K to 300 K. The increment of MIR value is proportional to increasing temperature. The maximum PR values measured at high frequency above 1 MHz remain almost same despite of the temperature variation from 10 K to 300 K except the sharpness in PR curves. However, the maximum PR values measured below 1 MHz show drastic increment at above 150K due to thermal activation of magnetic domains.s.s.

• Journal of the Korean Chemical Society
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• v.48 no.1
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• pp.46-52
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• 2004

The effect of crystallinity on the structural stability of layered manganese oxide has been systematically investigated. While well-crystalline manganate was prepared by solid-state reaction-ion exchange method, nanocrystalline one was obtained by Chimie-Douce reaction at room temperature. According to micro-Raman and Mn K-edge X-ray absorption spectroscopic results, manganese ions in both the manganese oxides are stabilized in the octahedral sites of the layered lattice consisting of edge-shared MnO6 octahedra. The differential potential plot clarifies that the layered structure of nanocrystalline material is well maintained during electrochemical cycling, in contrast to the well-crystalline homologue. From the micro-Raman results, it was found that delithiation-relithiation process for well-crystalline material gives rise to the structural transition from layered to spinel-type structure. On the basis of the present experimental findings, it can be concluded that nanocrystalline nature plays an important role in enhancing the structural stability of layered manganese oxides.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.147.1-147.1
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1033-1036
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• 2004

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.558-562
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• 2012

As an alternative energy, Dye-sensitized solar cells (DSSCs) have received much attention due to low cost manufacturing procedure and high energy consumption rate. Incorporating scattering centers in the nanocrystalline photoanode or additional scattering layers on the nanocrystalline photoanode is an effective way to enhance the light harvest efficiency of the photoanode and the performance of dye-sensitized solar cells (DSSCs). The light scattering abilities of these scattering layers also depend on the relative sizes and phase of the particles in the layers. A higher surface area is normally obtained using large particle sizes. Therefore, transparent high surface area $TiO_2$ layers and an additional scattering layer consisting of $TiO_2$-Rutile 500 nm paste with relatively larger particles are attractive. In this work, we investigates the applicability of a hybrid $TiO_2$ electrode (or a working electrode with a light scattering layer) in a DSSCs. We fabrication various thin film using $TiO_2$ paste 20 nm and $TiO_2$ paste 500 nm. As a result, the efficiency of the a single structure thin film was 3.35% and the efficiency as scattering layer of hybrid structure thin film was 4.36%, 4.73%.

• Journal of Powder Materials
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• v.14 no.5
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• pp.303-308
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• 2007

The oxidation of $Fe_{73}Si_{16}B_7Nb_3Cu_1$ nanocrystalline powder has been conducted to investigate its influence on the electromagnetic wave absorption characteristics of the soft magnetic material. Oxidation occurred primarily on the surface of nanocrystals. Oxidation reduced the real part of complex permeability due to the reduction of the relative volume of the powder, which otherwise contributes to the permeability. Oxidation reduced the absorption efficiency of the sheet at frequencies over 1GHz, indicating that the relative contribution of skin depth increments to the absorption was not significant. The pulverization and milling process lowered the optimum crystallization temperature of the material by $40{\sim}50^{\circ}C$ because of the internal energy accumulated during the fragmentation and powder thinning processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.175-177
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• 2002

Electrical characteristics of the Si-O superlattice diode as a function of annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy (MBE) system. Consequently, the experimental results of superlattice diode with multilayer Si-O structure showed the stable and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic and quantum device as well as for the replacement of silicon-on-insulator (SOI) in ultra high speed and lower power CMOS devices in the future, and it can be readily integrated with silicon ULSI processing.