• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.54-54
• /
• 2009

AFM anodic oxidation has the capability of patterning complex nano-patterns under relatively high speeds and low voltage. We report the fabrication using a atomic force microscopy (AFM) of silicon nano-ribbon and nano-field effect transistors (FETs). The fabricated nano-patterns have great potential characteristics in various fields due to their interesting electronic, optical and other profiles. The results shows that oxide width and the separation between the oxide patterns can be optimally controlled. The subsequently fabricated silicon nano-ribbon and nano-FET working devices were controled by various tip-sample bias-voltages and scan speed of AFM anodic oxidation. The results may be applied for highly integration circuits and sensitive optical sensor applications.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.1
• /
• pp.20-24
• /
• 2015

We studied the relationship between the surface smoothness of the internal Cu ribbon and the morphology of the Sn-Pb plating layer for solar cell modules. A bumpy surface was observed on the surface of the solar ribbon, which caused irregular reflection of light. Large, Pb-rich, primary ${\alpha}$-phases were found below the convex surface of the solar ribbon, passing from the surface of the internal Cu ribbon to the surface of the plating layer. The primary ${\alpha}$-phases heterogeneously nucleated on the convex surface of the Cu ribbon, and then largely grew to the convex surface of the plating layer. The restriction of the primary ${\alpha}$-phase's formation was enabled by enhancing the smoothness of the Cu ribbon's surface; it was also possible to increase the adhesive strength and decrease contact resistance. We confirmed that the solar ribbon's surface smoothness depends on the internal Cu ribbon's surface smoothness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.5
• /
• pp.332-337
• /
• 2015

We have studied the effects of Ag on the characteristics of $Sn_{60}Pb_{40}Ag_x$ (wt%) solder for photovoltaic ribbon. Ag atoms in the solder formed an alloy phase of $Ag_3Sn$ after reacting with some part of Sn atoms, while they did not react with Pb atoms, but decreased the mean size of Pb solid phase. The enhancement of peel strength between solar cell and ribbon is an important part in the developments of long-lifespan solar module. The peel strength of the solder ribbon of $Sn_{60}Pb_{40}$ (wt%) was $169N/mm^2$, and it was largely enhanced by adding a small amount of Ag atoms. The maximum peel strength was $295N/mm^2$ in the solder ribbon of $Sn_{60}Pb_{40}Ag_2$ (wt%). This result is caused by the high binding energy of 162.9 kJ/mol between Ag atoms in the solder and Ag atoms in Ag sheet.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.4
• /
• pp.217-220
• /
• 2014

We studied the plating properties of Sn-Pb solder according to the shape of the Cu wire's cross-section for photovoltaic ribbon. The thickness of the Sn-Pb layer largely decreased to 29% on a curved Cu surface, compared to a flat Cu surface. This phenomenon is caused by the geometrical decrease in the contact angle of the liquid Sn-Pb solder and an increase in the surface energy of the solid/vapor on the curved Cu surface. We suggest a new ribbon's design where the Cu wire's cross-section is a semi-ellipse. These semi-ellipse ribbons can decrease the use of Sn-Pb solder to 64% and increase the photovoltaic efficiency, by reducing the contact area between the ribbon and cell, to 84%. We also see an improvement of reflectivity in the curved surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.2
• /
• pp.119-125
• /
• 2017

We have studied the effects of Ag on the characteristics of $Sn_{43}Bi_{57}Ag_x$(wt%) lead-free solders for photovoltaic ribbon. Ag atoms in the solder formed an alloy phase of Ag3Sn after reacting with some part of Sn atoms, while they did not react with Bi atoms, but decreased the mean size of Bi solid phase and the thickness of solder. When Ag atoms of 3.0 wt% was added to eutectic $Sn_{43}Bi_{57}$(wt%) solder, it showed the optimally useful results that the peel strength of photovoltaic ribbon greatly increased and the sheet resistance of the solder decreased. In the meanwhile, the eutectic $Sn_{43}Bi_{57}$(wt%) solder showed a low melting temperature of $138.9^{\circ}C$, and showed a very similar result regardless of the added amount of Ag atoms.

• Smart Structures and Systems
• /
• v.18 no.5
• /
• pp.1029-1062
• /
• 2016

In this research, the nonlinear free vibration analysis of boron-nitride micro ribbon (BNMR) on the Pasternak elastic foundation under electrical, mechanical and thermal loadings using modified strain gradient theory (MSGT) is studied. Employing the von $K{\acute{a}}rm{\acute{a}}n$ nonlinear geometry theory, the nonlinear equations of motion for the graphene micro ribbon (GMR) using Euler-Bernoulli beam model with considering attached mass and size effects based on Hamilton's principle is obtained. These equations are converted into the nonlinear ordinary differential equations by elimination of the time variable using Kantorovich time-averaging method. To determine nonlinear frequency of GMR under various boundary conditions, and considering mass effect, differential quadrature element method (DQEM) is used. Based on modified strain MSGT, the results of the current model are compared with the obtained results by classical and modified couple stress theories (CT and MCST). Furthermore, the effect of various parameters such as material length scale parameter, attached mass, temperature change, piezoelectric coefficient, two parameters of elastic foundations on the natural frequencies of BNMR is investigated. The results show that for all boundary conditions, by increasing the mass intensity in a fixed position, the linear and nonlinear natural frequency of the GMR reduces. In addition, with increasing of material length scale parameter, the frequency ratio decreases. This results can be used to design and control nano/micro devices and nano electronics to avoid resonance phenomenon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.33-33
• /
• 2009

Silicon nano-structures have great potential in bionic sensor applications. Atomic force microscopy (AFM) anodic oxidation have many advantages for the nanostructure fabrication, such as simple process in atmosphere at room temperature, compatibility with conventional Si process. In this work, we fabricated simple FET structures with channel width W~ 10nm (nanowire) and $1{\mu}m$ (nano-ribbon) on ~10, 20 and 100nm-thinned silicon-on-insulator (SOI) wafers in order to investigate the surface effect on the transport characteristics of nano-channel. For further quantitative analysis, we carried out the 2D numerical simulations to investigate the effect of channel surface states on the carrier distribution behavior inside the channel. The simulated 2D cross-sectional structures of fabricated devices had channel heights of H ~ 10, 20, and 100nm, widths of L ~ $1{\mu}m$ and 10nm respectively, where we simultaneously varied the channel surface charge density from $1{\times}10^{-9}$ to $1{\times}10^{-7}C/cm2$. It has been shown that the side-wall charge of nanowire channel mainly affect the I-V characteristics and this was confirmed by the 2D numerical simulations.

• Journal of Magnetics
• /
• v.19 no.4
• /
• pp.327-332
• /
• 2014

The effect of minor element additions (Ca, Al) on microstructural change and magnetic properties of Fe-Nb-Cu-Si-B alloy has been investigated, in this paper. The Fe-Si-B-Nb-Cu(-Ca-Al) alloys were prepared by arc melting in argon gas atmosphere. The alloy ribbons were fabricated by melt-spinning, and heat-treated under a nitrogen atmosphere at $520-570^{\circ}C$ for 1 h. The soft magnetic properties of the ribbon core were analyzed using the AC B-H meter. A differential scanning calorimetry (DSC) was used to examine the crystallization behavior of the amorphous alloy ribbon. The microstructure was observed by X-ray diffraction (XRD), transmission electron microscope (TEM) and scanning electron microscope (SEM). The addition of Ca increased the electrical resistivity to reduce the eddy current loss. And the addition of Al decreased the intrinsic magnetocrystalline anisotropy $K_1$ resulting in the increased permeability. The reduction in the size of the ${\alpha}$-Fe precipitates was observed in the alloys containing of Ca and Al. Based on the results, it can be concluded that the additions of Ca and Al notably improved the soft magnetic properties such as permeability, coercivity and core loss in the Fe-Nb-Cu-Si-B base nanocrystalline alloys.

• Proceeding of EDISON Challenge
• /
• 2015.03a
• /
• pp.324-329
• /
• 2015

First-principles investigations on the hybrid one dementional hexagonal hybrboron-nitride nano ribbons (BNNRs) with a armchair graphene nano-ribbons(AGRNRs), are presented. Electronics properties of the mixed armchair BNC nano-ribbon (BNCNRs) structure show control of a band gap on all cases at the special K-point. And we have studied, the band gap is direct in all cases. The band gap of mixed ABNCNRs could be divided into three groups (${\Delta}3p$, ${\Delta}3p+1$ and ${\Delta}3p+2$) and decrease with the increase of the width. Also these results show similar to the AGNRs case. Different from the band gap value ordering of AGNRs (${\Delta}3p+1$ > ${\Delta}3p$ > ${\Delta}3p+2$), the ordering of ABNCNRs is ${\Delta}3p$ > ${\Delta}3p+1$ > ${\Delta}3p+2$. The discrepancy may come from the differences between the edges of AGRNRs and the boundaries of hybrid BNCNRs. In addition, the bandgap of ABNCNRs are much smaller than those of the corresponding AGNRs. Our results show that the origin of band gap for BNCNRs with armchair shaped edges arises from both quantum confinement effect of the edges. These results similar to thecase of AGNRs. These properties of hybrid BN/C nano-ribbon structure may offer suitable bandgap to develop nnanoscale electronics and solar cell beyond individual GNRs and BNNRs.

• Korean Chemical Engineering Research
• /
• v.49 no.3
• /
• pp.338-341
• /
• 2011

Thin silicon ribbon was used for fabricating flexible silicon p-i-n junction devices, consisting of 100${\times}$100 arrays of pixels in 1 inch on the diagonal. Those passive matrix devices exhibited the rectification ratio $>10^{4}$ owing to smaller cross-talking current than that of p-n junction devices. P-i-n devices fabricated on silica/silicon substrates are easily detached by treatment with hydrofluoric acid and are subsequently transferred onto both PDMS and flexible PET film.