• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.731-733
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• 2012

Because the Double gate MOSFET has two gates, it has more efficient on controling current than the exisiting MOSFET, and it can also decrease short channel effects in the nano-device. In this study, during the manufacturing the Double gate MOSFET, we will analyze the change of threshold voltage according to doping concentration that makes a significant impact on short channel effects. One of the structural factors that affect the threshold voltage on the Double gate MOSFET is the doping concentration, and it is very important device parameter. In this paper, we can find that the threshold voltage became larger when the doping concentration increased from $10^{15}cm^{-3}$ to $10^{19}cm^{-3}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.194-199
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• 2020

By controlling the composition of the metal-oxide nanosheet having a two-dimensional layered crystal structure, material properties and application can be extended. In this study, the composition of the nanosheet could be expanded from pure composition to doping composition by successfully synthesizing the TiO₂ nanosheet doped with Nb. Specifically, the doping composition was designed when synthesizing the layered metal oxide as a starting material (K_0.8Ti_1.73-xNb_xLi_0.27O₄, x = 0, 0.03, 0.07) and chemical exfoliation was performed. By doing this, it was possible to obtain the Nb-doped TiO_y ultrathin nanosheet. The size of the nano sheet was 2 ㎛ or less based on the long length in the x-y direction, and the thickness was about 1 nm. Nb-doping was confirmed by XRD and SEM-EDS analysis.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.7
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• pp.1537-1542
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• 2011

In this paper, the subthreshold characteristics have been analyzed for various oxide thickness of double gate MOSFET(DGMOSFET) using Poisson's equation with nonuniform doping distribution. The DGMOSFET is extensively been studying since it can shrink the short channel effects(SCEs) in nano device. The degradation of subthreshold swing(SS) known as SCEs has been presented using analytical for, of Poisson's equation with nonuniform doping distribution for DGMOSFET. The SS have been analyzed for, change of gate oxide thickness to be the most important structural parameters of DGMOSFET. To verify this potential and transport models of thus analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing has been analyzed using this models for DGMOSFET.

• Advances in nano research
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• v.3 no.3
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• pp.123-131
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• 2015

The unintentionally doped and bismuth (Bi) doped zinc oxide (ZnO) films were prepared by spray pyrolysis at $450^{\circ}C$ with zinc acetate and bismuth nitrate precursor. The n-type conduction with concentration $6.13{\times}10^{16}cm^{-3}$ can be observed for the unintentionally doped ZnO. With the increasing of bismuth nitrate concentration in precursor, the p-type conduction can be observed. The p-type concentration $4.44{\times}10^{17}cm^{-3}$ can be achieved for the film with the Bi/Zn atomic ratio 5% in the precursor. The photoluminescence spectroscopy with HeCd laser light source was studied for films with different Bi doping. The photocatalytic activity for the unintentionally doped and Bi-doped ZnO films was studied through the photodegradation of Congo red under UV light illumination. The effects of different Bi contents on photocatalytic activity are studied and discussed. Results show that appropriate Bi doping in ZnO can increase photocatalytic activity.

• Bulletin of the Korean Chemical Society
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• v.31 no.5
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• pp.1411-1414
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• 2010

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.188.1-188
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• 2003

• ETRI Journal
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• v.39 no.2
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• pp.284-291
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• 2017

Drain-induced barrier lowering (DIBL) is one of the main parameters employed to indicate the short-channel effect for nano metal-oxide semiconductor field-effect transistors (MOSFETs). We propose a new physical model of the DIBL effect under two-dimensional approximations based on the energy-conservation equation for channel electrons in FETs, which is different from the former field-penetration model. The DIBL is caused by lowering of the effective potential barrier height seen by the channel electrons because a lateral channel electric field results in an increase in the average kinetic energy of the channel electrons. The channel length, temperature, and doping concentration-dependent DIBL effects predicted by the proposed physical model agree well with the experimental data and simulation results reported in Nature and other journals.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.112-113
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• 2007

ZnS:Cn,Cl phosphor was coated by solid-gel reaction with $SiO_2$ outside layer. The effect of $Cu^{2+}$ -doping concentration has been investigated on the luminescence characteristics of ZnS:Cn,Cl blue-green phosphors for inorganic electro luminescent device. Also, SiO2 coated layers' effect on luminescence characteristics. Evaluation of luminescence characteristics dependent on the synthesis conditions is important to get high-performance phosphors properties. EL and PL properties such as luminescence intensity and chromaticity of ZnS:Cn,Cl phosphors synthesized with different concentration of activator, $Cu^{2+}$, were analysed separately

• Journal of Magnetics
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• v.17 no.3
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• pp.163-167
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• 2012

The effects on the ferromagnetism of the O or Zn defect in Cu-doped ZnO with the concentration of 2.77-8.33% have been investigated by the first-principles calculations. The Cu doping in ZnO was calculated to be a kind of p-type ferromagnetic half-metals. When the Zn vacancy exists in Cu-doped ZnO, the Cu magnetic moment increases, while for the O vacancy it is reduced. It is noticeable that the ferromagnetic state was originated from the hybridized O(2p)-Cu(3d)-O(2p) chain formed through the p-d coupling. The carrier-mediated ferromagnetism by nitrogen or fluorine does not depend on their concentration.

• Journal of Powder Materials
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• v.29 no.2
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• pp.152-158
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• 2022

Thermoelectric materials can reversely convert heat and electricity into each other; therefore, they can be very useful for energy harvesting from heat waste. Among many thermoelectrical materials, SnSe exhibits outstanding thermoelectric performance along the particular direction of a single crystal. However, single-crystal SnSe has poor mechanical properties and thus it is difficult to apply for mass production. Therefore, polycrystalline SnSe materials may be used to replace single-crystal SnSe by overcoming its inferior thermoelectric performance owing to surface oxidation. Considerable efforts are currently focused on enhancing the thermoelectric performance of polycrystalline SnSe. In this study, we briefly review various enhancement methods for SnSe thermoelectric materials, including doping, texturing, and nano-structuring. Finally, we discuss the future prospects of SnSe thermoelectric powder materials.