• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.463-467
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• 2007

Structure and optical properties of ZnO epilayers grown on oxygen- and hydrogen-plasma treated sapphire substrates by plasma-assisted molecular beam epitaxy (denoted as samples A and B, respectively) have been investigated by various techniques. The crystal quality and structural properties of the surface for the ZnO epilayers were investigated by high-resolution X-ray diffraction and atomic force microscope. For investigating the optical properties of excitonic transition of ZnO, we carried out photoluminescence experiments as a function of temperature. The free exciton, bound exciton emission and their phonon replicas were investigated as a function of temperature from 10 to 300 K, and the intensity of excitonic PL peak emission from the sample A is found to be higher than that of sample B. From the results, we found that sample A has better crystal structure quality and optical properties as compared to sample B. The number of oxygen vacancies may be decreased in sample A, resulting in an enhancement of the crystal quality and a higher intensity of excitonic emission band as compared to sample B.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.26-29
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.352-357
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• 2009

The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.403-403
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• 2010

The Pt-Ni alloy is an electro-catalyst of interest in the low temperature direct methanol fuel cells(DMFCs). It has been already reported that the Pt-Ni alloy catalysts may even have enhanced activity compared to pure platinum catalyst, depending on how the surfaces are prepared. The order-disorder transition in bimetallic alloy such as $\beta$-CuZn, Cu3Au, and CuAu have been investigated greatly by x-ray diffraction. After annealing the bimetallic alloy, the crystal structure changes as observed in the order-disorder transition of Cu3Au which changes from the face centered cubic to a simple cubic structure. Pt-Ni bimetallic alloy has been already reported to have the face centered cubic structure. However, in nano-scale Pt-Ni bimetallic alloy crystals the crystal structures changes to a simple cubic structure. In this experiment, we have studied the order-disorder transition in Pt-Ni bimetallic nanocrystals. Pt/Ni thin films were deposited on sapphire(0001) substrates by e-beam evaporator and then Pt-Ni alloy were formed by RTA at 500, 600, and $700^{\circ}C$ in a vacuum environment and Pt-Ni nano particles were formed by RTA at $1059^{\circ}C$ in a vacuum environment. We measured the structure of Pt-Ni bimetallic alloy films using synchrotron x-ray diffraction and SEM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.199-205
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• 2010

The crystallization speed (v) of amorphous (InTe)$_x$(GeTe) (x = 0.1, 0.3 and 0.5) films and their thermal, optical and electrical behaviors have been investigated using nano-pulse scanner (wavelength = 658 nm, laser beam diameter < 2 ${\mu}m$), X-ray diffraction (XRD), 4-point probe and UV-vis-IR spectrophotometer. These results were compared with those of $Ge_2Sb_2Te_5$ (GST) film, comprehensively utilized for phase-change random access memory (PRAM). Both v-value and thermal stability of (InTe)$_{0.1}$(GeTe) and (InTe)$_{0.3}$(GeTe) films could be enhanced in comparison with those of the GST. Contrarily, the v-value in the (InTe)$_{0.5}$(GeTe) film was so drastically deteriorated that we could not quantitatively evaluate it. This deterioration is thought because amorphous (InTe)$_{0.5}$(GeTe) film has relatively high reflectance, resulting in too low absorption to cause the crystallization. Conclusively, it could be thought that a proper compositional (InTe)$_x$(GeTe) films (e.g., x < 0.3) may be good candidates with both high crystallization speed and thermal stability for PRAM application.

• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.660-666
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• 2010

30 nm thick Ni layers were deposited on a glass substrate by e-beam evaporation. Subsequently, 30 nm or 60 nm ${\alpha}-Si:H$ layers were grown at low temperatures ($<220^{\circ}C$) on the 30 nm Ni/Glass substrate by catalytic CVD (chemical vapor deposition). The sheet resistance, phase, microstructure, depth profile and surface roughness of the $\alpha-Si:H$ layers were examined using a four-point probe, HRXRD (high resolution Xray diffraction), Raman Spectroscopy, FE-SEM (field emission-scanning electron microscopy), TEM (transmission electron microscope) and AES depth profiler. The Ni layers reacted with Si to form NiSi layers with a low sheet resistance of $10{\Omega}/{\Box}$. The crystallinty of the $\alpha-Si:H$ layers on NiSi was up to 60% according to Raman spectroscopy. These results show that both nano-scale NiSi layers and crystalline Si layers can be formed simultaneously on a Ni deposited glass substrate using the proposed low temperature catalytic CVD process.

• The Journal of Korean Academy of Prosthodontics
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• v.45 no.6
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• pp.795-804
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• 2007

Statement of problem. Nano-scale calcium-phosphate coating on the anodizing titanium surface using ion beam-assisted deposition (IBAD) has been recently introduced to improve the early osseointegration. However, not much is known about their surface characteristics that have influence on tissue-implant interaction. Purpose. This study was aimed to investigate microtopography, surface roughness, surface composition, and wettability of the titanium surface modified by the anodic oxidation and calcium phosphate coating using IBAD. Material and methods. Commercially pure titanium disks were used as substrates. The experiment was composed of four groups. Group MA surfaces represented machined surface. Group AN was anodized surface. Group CaP/AN was anodic oxidized and calcium phosphate coated surfaces. Group SLA surfaces were sandblasted and acid etched surfaces. The prepared titanium discs were examined as follows. The surface morphology of the discs was examined using SEM. The surface roughness was measured by a confocal laser scanning microscope. Phase components were analyzed using thin-film x-ray diffraction. Wettability analyses were performed by contact angle measurement with distilled water, formamide, bromonaphtalene and surface free energy calculation. Results. (1) The four groups showed specific microtopography respectively. Anodized and calcium phosphate coated specimens showed multiple micropores and tiny homogeneously distributed crystalline particles. (2) The order of surface roughness values were, from the lowest to the highest, machined group, anodized group, anodized and calcium phosphate deposited group, and sandblasted and acid etched group. (3) Anodized and calcium phosphate deposited group was found to have titanium and titanium anatase oxides and exhibited calcium phosphorous crystalline structures. (4) Surface wettability was increased in the order of calcium phosphate deposited group, machined group, anodized group, sandblasted and acid etched group. Conclusion. After ion beam-assisted deposition on anodized titanium, the microporous structure remained on the surface and many small calcium phosphorous crystals were formed on the porous surface. Nanoscale calcium phosphorous deposition induced roughness on the microporous surface but hydrophobicity was increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.76.1-76.1
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• 2015

Optical resonances of metallic or dielectric nanoantennas enable to effectively convert free-propagating electromagnetic waves to localized electromagnetic fields and vice versa. Plasmonic resonances of metal nanoantennas extremely modify the local density of optical states beyond the optical diffraction limit and thus facilitate highly-efficient light-emitting, nonlinear signal conversion, photovoltaics, and optical trapping. The leaky-mode resonances, or termed Mie resonances, allow dielectric nanoantennas to have a compact size even less than the wavelength scale. The dielectric nanoantennas exhibiting low optical losses and supporting both electric and magnetic resonances provide an alternative to their metallic counterparts. To extend the utility of metal and dielectric nanoantennas in further applications, e.g. metasurfaces and metamaterials, it is required to understand and engineer their scattering characteristics. At first, we characterize resonant plasmonic antenna radiations of a single-crystalline Ag nanowire over a wide spectral range from visible to near infrared regions. Dark-field optical microscope and direct far-field scanning measurements successfully identify the FP resonances and mode matching conditions of the antenna radiation, and reveal the mutual relation between the SPP dispersion and the far-field antenna radiation. Secondly, we perform a systematical study on resonant scattering properties of high-refractive-index dielectric nanoantennas. In this research, we examined Si nanoblock and electron-beam induced deposition (EBID) carbonaceous nanorod structures. Scattering spectra of the transverse-electric (TE) and transverse-magnetic (TM) leaky-mode resonances are measured by dark-field microscope spectroscopy. The leaky-mode resonances result a large scattering cross section approaching the theoretical single-channel scattering limit, and their wide tuning ranges enable vivid structural color generation over the full visible spectrum range from blue to green, yellow, and red. In particular, the lowest-order TM01 mode overcomes the diffraction limit. The finite-difference time-domain method and modal dispersion model successfully reproduce the experimental results.

• Advances in nano research
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• v.5 no.3
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• pp.193-201
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• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

• Advances in nano research
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• v.1 no.4
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• pp.219-228
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• 2013

We report on the preparation of iron pyrite ($FeS_2$) using pulsed electron ablation of two targets, namely, a mixture of sulfur and iron compound target, and a natural iron pyrite target. Thin films of around 50 nm in thickness have been deposited on glass substrates under Argon background gas at 3 mTorr, and at a substrate temperature of up to $450^{\circ}C$. The thin films have been analyzed chemically and examined structurally using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and visible Raman spectroscopy. The morphology and thickness of the films have been assessed using scanning electron microscopy (SEM) and visible spectroscopic reflectance. The preliminary findings, using a synthetic target, show the presence of iron pyrite with increasing proportion as substrate temperature is increased from $150^{\circ}C$ to $250^{\circ}C$. The data have not shown any evidence of pyrite in the deposited films from a natural target.